Zobrazeno 1 - 10
of 34
pro vyhledávání: '"H. J. Stiegler"'
Publikováno v:
SoCC
Low input offset is important in high precision Op-Amps. However, input offset errors caused by mismatch in differential signal paths as a result of random variations are unavoidable even with optimum layout techniques. A relatively new method, the u
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e18ccc80ad15ad4dc293942796be1445
https://doi.org/10.1109/socc49529.2020.9524775
https://doi.org/10.1109/socc49529.2020.9524775
Publikováno v:
SoCC
Voltage references are an integrated circuit component used to provide stable references. They provide a voltage that is generally independent of supply voltage and temperature and have a variety of applications in control systems and data converters
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68c8f77f03f2a6df48d54c0b805f1210
https://doi.org/10.1109/socc49529.2020.9524788
https://doi.org/10.1109/socc49529.2020.9524788
Autor:
H. J. Stiegler, Andrew Marshall, Akash Tadmare, Hongbing Lu, Yao Ren, Yuanning Chen, Akash Dey
Publikováno v:
2020 IEEE Green Technologies Conference(GreenTech).
We describe a self-contained energy harvester using vibration energy harvesting sources. The power generation module is segmented such that it can be expanded to provide a power based on an expected need, and back-up power can be provided to allow fo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b0b64be215e737edd76e5ff39b866cec
https://doi.org/10.1109/greentech46478.2020.9289775
https://doi.org/10.1109/greentech46478.2020.9289775
Publikováno v:
MOCAST
Spin-Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a replacement for currently used embedded non-volatile memory. We describe the characteristics of STT-MRAM and explore aspects of the memory array including trade-off in size, switching
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fccf53bf9ad39667657d7ab69c5c2030
https://doi.org/10.1109/mocast.2019.8741642
https://doi.org/10.1109/mocast.2019.8741642
Autor:
Ronald J. Pieper, Israel Mejia, Bruce E. Gnade, W. Wondmagegn, Manuel Quevedo-Lopez, H. J. Stiegler, A. L. Salas-Villasenor
Publikováno v:
Microelectronic Engineering. 157:64-70
Organic and inorganic thin film transistors (TFTs) are fabricated, simulated, and tested for circuit applications. The devices are based on polycrystalline cadmium sulfide (CdS) and pentacene thin films. Both devices are simulated and analyzed using
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f11c7eb1a802f733b6fd02b5707dafe
https://doi.org/10.1016/j.mee.2016.02.042
https://doi.org/10.1016/j.mee.2016.02.042
Publikováno v:
ISQED
Consideration of random device mismatch is an important factor in the design of high performance analog circuits. Floating gate transistors have long been used for digital nonvolatile memory applications (such as flash memory), but a variant to this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9595347f340dc5f593a2dd119e7a13b4
https://doi.org/10.1109/isqed.2018.8357291
https://doi.org/10.1109/isqed.2018.8357291
Autor:
Duo Mao, Manuel Quevedo-Lopez, A. L. Salas-Villasenor, H. J. Stiegler, Bruce E. Gnade, Israel Mejia
Publikováno v:
IEEE Transactions on Electron Devices. 61:3442-3447
We have demonstrated a low temperature fully integrated process for a ferroelectric random access memory array for potential flexible electronics applications. The memory cell is based on a two-transistor-two-capacitor structure, with cadmium sulfide
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::445e48df739a429059a90c4c909b0aa4
https://doi.org/10.1109/ted.2014.2347053
https://doi.org/10.1109/ted.2014.2347053
Autor:
Israel Mejia, Manuel Quevedo-Lopez, A. L. Salas-Villasenor, Duo Mao, H. J. Stiegler, Madhusudan Singh, Bruce E. Gnade
Publikováno v:
Organic Electronics. 14:505-510
We have demonstrated a low temperature process for a ferroelectric non-volatile random access memory cell based on a one-transistor–one-capacitor (1T1C) structure for application in flexible electronics. The n-channel thin film transistors (TFTs) a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9388544b7ce16a14d26e8d5b08b6ef3
https://doi.org/10.1016/j.orgel.2012.10.035
https://doi.org/10.1016/j.orgel.2012.10.035
Autor:
H. J. Stiegler, Isaac Trachtenberg, Michael R. Perez, Manuel Quevedo-Lopez, Israel Mejia, Bruce E. Gnade, A. L. Salas-Villasenor
Publikováno v:
Organic Electronics. 13:3045-3049
Fabrication and characterization of integrated hybrid complementary metal oxide semiconductor devices (CMOS) using 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PC) and cadmium sulfide (CdS) as the active layers deposited using solution based pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe891695cc86c2edf72957ce2a983776
https://doi.org/10.1016/j.orgel.2012.08.015
https://doi.org/10.1016/j.orgel.2012.08.015
Autor:
Mingyue Zhao, R. A. Chapman, H. J. Stiegler, Obradovic Borna J, Gazi A. Mahmud, Kurtis D. Cantley, Huang-Chun Wen, Eric M. Vogel, P. G. Fernandes
Publikováno v:
Sensors and Actuators B: Chemical. 161:163-170
A user-friendly behavioral macromodel for biological response of FET-based transistors has been developed for use with commercial SPICE versions and will enable circuit level analysis of biosensor chips. The model is based on the physically realistic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2787243c43530c4e41e794e93670e87e
https://doi.org/10.1016/j.snb.2011.10.002
https://doi.org/10.1016/j.snb.2011.10.002