Zobrazeno 1 - 10
of 93
pro vyhledávání: '"H. J. Queisser"'
Autor:
W. Hillebrandt, H. J. Queisser, T. Breuer, W. Kinzel, O. Rang, J. Habermann, W. Helfrich, G. Hellbardt, H. Jacobs, H. G. Schuster
Publikováno v:
Physik Journal. 53:1029-1035
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e67b3245798c11e132332cdfea7a667c
https://doi.org/10.1002/phbl.19970531023
https://doi.org/10.1002/phbl.19970531023
Autor:
H. Nicolai, R. Sittig, H. Schopper, H. J. Queisser, S. Koch, M. Ziegler, H. Rechenberg, M. Ritsch-Marte
Publikováno v:
Physik Journal. 53:716-719
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e3ce1f2f8e40c1b50d71340722aa6b6
https://doi.org/10.1002/phbl.19970530725
https://doi.org/10.1002/phbl.19970530725
Autor:
M. Procop, Frank Bugge, H. Seitz, A. Höpner, Kurt Scheerschmidt, H. J. Queisser, I. Rechenberg
Publikováno v:
Physica Status Solidi (a). 150:427-437
In order to optimize the growth conditions of strained-layer InGaAs QW high-performance lasers by MOVPE, different growth parameters are systematically varied. These test structures as well as complete laser structures are carefully analysed. Special
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3967208519cfc1ae8f5ce16a1abce0f
https://doi.org/10.1002/pssa.2211500137
https://doi.org/10.1002/pssa.2211500137
Autor:
H.-J. Queisser, Marek Potemski, Stefan Haacke, Klaus Köhler, W. W. Rühle, G. Weimann, J.C. Maan, Michael Oestreich, A.P. Heberle
Publikováno v:
Physica B-Condensed Matter, 204, 1-4, pp. 332-338
Physica B-Condensed Matter, 204, 332-338
Physica B-Condensed Matter, 204, 332-338
We report on time-resolved luminescence in GaAs quantum wells in high magnetic fields up to 21 T. Results on resonant tunneling and exciton relaxation including spin flip are presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a96e6cc71bb4c0bacca32d7ff2601a05
https://doi.org/10.1016/0921-4526(94)00283-2
https://doi.org/10.1016/0921-4526(94)00283-2
Publikováno v:
Physica Status Solidi (a). 137:543-548
The influence of atomic hydrogen on the D-band photoluminescence in silicon is investigated. In contrast to other studies, a preferential passivation of the D1- and D4-band intensities but an increase in the intensities of the D2 and D3 bands after h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4938060edcaeedff45546223513f2f0
https://doi.org/10.1002/pssa.2211370224
https://doi.org/10.1002/pssa.2211370224
Publikováno v:
Chemical Physics Letters. 202:415-418
Excited singlet states of [Mo6Cl14]2− cluster anions, as previously predicted but undiscovered, are detected in single crystals of [N(C4H9)4]2Mo6Cl14 by means of photoluminescence measurements with time resolution in the picosecond regime. The inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6377042094c370a133439cdc0497aec5
https://doi.org/10.1016/0009-2614(93)90063-7
https://doi.org/10.1016/0009-2614(93)90063-7
Autor:
U. Morlock, H. J. Queisser
Publikováno v:
Philosophical Magazine A. 64:165-171
Monoatomic growth steps on vicinal (100) faces of gallium arsenide, grown epitaxially from gallium solution close to thermal equilibrium, are normally straight, equidistant and usually nucleated at dislocation emergence points. Beyond a critical temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee1f108657ddc57b3753e0e6cc217738
https://doi.org/10.1080/01418619108206133
https://doi.org/10.1080/01418619108206133
Autor:
H. J. Queisser
Publikováno v:
Applied Physics A Solids and Surfaces. 52:261-264
A hierarchy of logarithmically sequenced relaxation rates establishes a model for the "universal dielectric response", which is widely observed in condensed matter and displays a continually decelerated response in striking contrast to Debye relaxati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c129d7a45da1679eca59b935a281aea6
https://doi.org/10.1007/bf00324588
https://doi.org/10.1007/bf00324588
Publikováno v:
Journal of Applied Physics. 75:8204-8206
The recombination kinetics of the electron‐hole plasma in strongly excited, undoped Ga0.5In0.5P are investigated at 300 and 150 K by time‐resolved photoluminescence measurements using line‐shape analysis of transient spectra. Radiative recombin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d453b6ea822e7b1d55ca262f2dc581c6
https://doi.org/10.1063/1.356522
https://doi.org/10.1063/1.356522
Publikováno v:
Physical review. B, Condensed matter. 44(16)
A quasicolumnar structure of GaAs quantum wells with mean column diameters of d=1--10 \ensuremath{\mu}m is observed in narrow ${\mathrm{Al}}_{0.4}$${\mathrm{Ga}}_{0.6}$As/GaAs quantum wells prepared by liquid-phase epitaxy. The heterostructures are g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9af9ad5b2f1a81cc94f1d3a96a72dabb
https://pubmed.ncbi.nlm.nih.gov/9998835
https://pubmed.ncbi.nlm.nih.gov/9998835