Zobrazeno 1 - 10
of 227
pro vyhledávání: '"H. J. Osten"'
Autor:
Sami Suihkonen, Philipp Gribisch, Dipankar Saha, Swaroop Ganguly, Sreenadh Surapaneni, Apurba Laha, Jori Lemettinen, H. J. Osten, Ravindra Singh Pokharia, Dhiman Nag, Ritam Sarkar, Bhanu B. Upadhyay, Swagata Bhunia
Publikováno v:
IEEE Transactions on Electron Devices. 68:2653-2660
In this article, we report the temperature-dependent transistor characteristic of Epi-Gd2O3/AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOSHEMT) and compare its properties with that of AlGaN/GaN metal-Schottky high electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e1e3740427c05a4c95a0b5e9c7b1a80
https://doi.org/10.1109/ted.2021.3070838
https://doi.org/10.1109/ted.2021.3070838
Publikováno v:
Acta Crystallographica Section B Structural Science, Crystal Engineering and Materials. 75:59-70
The influence of growth conditions on the layer orientation, domain structure and crystal structure of gadolinium oxide (Gd2O3) on silicon (001) has been investigated. Gd2O3 was grown at low (250°C) and high (850°C) temperatures with different oxyg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a5767fa013f1fef713c7a51322dda61
https://doi.org/10.1107/s2052520618017869
https://doi.org/10.1107/s2052520618017869
Publikováno v:
Journal of Electronic Materials (JEM) 49 (2020), Nr. 11
The effects of nitrogen incorporation by high-dose ion implantation in epitaxial gadolinium oxide (Gd2O3) films on Si (111) followed by annealing have been investigated. The nitrogen content in the oxide layer was changed by altering the implantation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e8b3dd895fe05664c257c51f6788a6dc
Autor:
A. Kribus, A. Ben-Or, P. Fischer, H. J. Osten, J A Töfflinger, L Montañez, Roland Weingärtner, J A Guerra, Rolf Grieseler
Publikováno v:
Materials Today: Proceedings. 5:14765-14771
In this work, the influence of different hydrogen dilution conditions on the optical, structural and passivation properties of crystalline, hexagonal aluminum nitride is assessed. The layers were deposited using an inline sputter coater in reactive A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9f64e75e385e18e696c71f49d0c9c8f3
https://doi.org/10.1016/j.matpr.2018.03.066
https://doi.org/10.1016/j.matpr.2018.03.066
Autor:
Jan Krügener, Robby Peibst, Sascha J. Wolter, Michael Rienäcker, S. John, H. J. Osten, M. Sanchez, Sören Schäfer, Rolf Brendel
Publikováno v:
Solar Energy Materials and Solar Cells. 233:111337
The maximum achievable silicon single junction solar cell efficiency is limited by intrinsic recombination and by its limited capability of absorbing sun light. For Lambertian light trapping the maximum theoretical solar cell efficiency is around 29.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbd86aa4f157d9c8ea975d072d7b4016
https://doi.org/10.1016/j.solmat.2021.111337
https://doi.org/10.1016/j.solmat.2021.111337
Publikováno v:
Journal of Crystal Growth. 480:141-144
We report on the growth of non-cubic gadolinium oxide on a silicon substrate using molecular beam epitaxy. Structural investigations with X-ray diffraction show that the structure of the oxide differs from the expected cubic structure. Possible struc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bff7f4c79e590d9a3e2f50989cc5377b
https://doi.org/10.1016/j.jcrysgro.2017.10.019
https://doi.org/10.1016/j.jcrysgro.2017.10.019
Autor:
Krista Khiangte Roluahpuia, H. J. Osten, Udayan Ganguly, Amita Rawat, Apurba Laha, Philipp Gribisch, Suddhasatta Mahapatra
Publikováno v:
Thin Solid Films. 731:138732
Germanium-on-insulator (GeOI) technology is a potential-alternative to the bulk-silicon based devices for radio-frequency (RF), and complementary metal oxide semiconductor applications at advanced technology nodes. A thin germanium channel is the key
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7c20d5562ebcba76403a1a1d62ba968
https://doi.org/10.1016/j.tsf.2021.138732
https://doi.org/10.1016/j.tsf.2021.138732
Publikováno v:
Journal of Materials Research. 32:699-716
Epitaxial layers of insulating binary lanthanide oxides have been considered as potential alternative to conventional SiO2 for gate dielectric application in future Si-based MOSFET devices, which was investigated in more detail for epitaxial Gd2O3 an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8db129a056c9f06119a60e133b144d6
https://doi.org/10.1557/jmr.2017.22
https://doi.org/10.1557/jmr.2017.22
Autor:
Rolf Brendel, Frank Heinemeyer, M. Jestremski, Jan Krügener, Robby Peibst, H. J. Osten, Fabian Kiefer
Publikováno v:
Solar Energy Materials and Solar Cells. 157:326-330
For boron implants made with ion implanters designed for PV applications, a variety of ion species BF x ( x =0.2) is implanted, while BF 2 accounts for the lions share. We investigate the impact of the BF 2 implantation dose and the annealing conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c1ef64743a57209e3726a549689bbae
https://doi.org/10.1016/j.solmat.2016.05.028
https://doi.org/10.1016/j.solmat.2016.05.028
Epi-Gd2O3/AlGaN/GaN MOS HEMT on 150 mm Si wafer: A fully epitaxial system for high power application
Autor:
Apurba Laha, Swaroop Ganguly, H. J. Osten, Dipankar Saha, Ritam Sarkar, Dhiman Nag, Christoffer Kauppinen, B. C. Barik, K. Das Gupta, Iurii Kim, Philipp Gribisch, Jori Lemettinen, Swagata Bhunia, Sami Suihkonen
In this letter, we report the impact of epitaxial Gd2O3 on the electrical properties of an AlGaN/GaN high electron mobility transistor (HEMT) grown on a 150 mm diameter Si (111) substrate. Incorporation of epitaxial Gd2O3 grown by the molecular beam
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7928126591a8a7965aefbd49476fe33f
https://aaltodoc.aalto.fi/handle/123456789/40006
https://aaltodoc.aalto.fi/handle/123456789/40006