Zobrazeno 1 - 7
of 7
pro vyhledávání: '"H. J. Geipel"'
Autor:
W. K. Tice, H. J. Geipel
Publikováno v:
IBM Journal of Research and Development. 24:310-317
Damage introduced by ion implantation on the back side of the wafer is used to reduce the MOS transient (relaxation) and junction leakage; the technique is applied to dynamic memory cells. Conditions necessary to ensure efficient gettering by various
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7cb7f22ea31a60194519fa15c3ea7183
https://doi.org/10.1147/rd.243.0310
https://doi.org/10.1147/rd.243.0310
Autor:
H. J. Geipel, R. B. Shasteen
Publikováno v:
IBM Journal of Research and Development. 24:362-369
Shallow (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76a5e5b6cfd1a2dc168444dcc7d3e90c
https://doi.org/10.1147/rd.243.0362
https://doi.org/10.1147/rd.243.0362
Publikováno v:
Journal of The Electrochemical Society. 129:1330-1335
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b82f99e042ef3697126b1e74a085b59b
https://doi.org/10.1149/1.2124130
https://doi.org/10.1149/1.2124130
Publikováno v:
Journal of The Electrochemical Society. 129:1307-1312
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::666f824217ba195cbf40eead8deb2b26
https://doi.org/10.1149/1.2124123
https://doi.org/10.1149/1.2124123
Autor:
H. J. Geipel, W. K. Tice
Publikováno v:
Applied Physics Letters. 30:325-327
The nature of residual ion‐implantation damage responsible for gettering deleterious impurities from active semiconductor device regions in Si has been studied. A propensity for dislocations of the type b=1/2 〈110〉 to gather metallic contaminan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef406bb255ac624551afbf69e296650e
https://doi.org/10.1063/1.89385
https://doi.org/10.1063/1.89385
Autor:
H J, Geipel
Publikováno v:
Quintessence international. 1(8)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::970ef83a557418b9abc906ed5f82ab3a
https://pubmed.ncbi.nlm.nih.gov/4916425
https://pubmed.ncbi.nlm.nih.gov/4916425
Autor:
H J, Geipel
Publikováno v:
Die Quintessenz. 19(7)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::9ab2d2d32de713c1f52f4ed7d9231006
https://pubmed.ncbi.nlm.nih.gov/4879683
https://pubmed.ncbi.nlm.nih.gov/4879683