Zobrazeno 1 - 2
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pro vyhledávání: '"H. J. Dohse"'
Publikováno v:
Microelectronic Engineering. 30:567-570
A scanning electron-beam wafer inspection system (SEMSpec) has been developed. This system uses a high current (30–50 nA) field emission source to produce a low energy (800 eV) inspection beam. High speed digital processing (108 pixels/sec) of the
Autor:
C.‐S. Pan, M. Robinson, D. J. Clark, J. Taylor, Alan D. Brodie, H. J. Dohse, L. S. Chuu, R. E. Paul, D. G. Emge, D. E. A. Smith, B. G. Becker, J. E. McMurtry, Lee H. Veneklasen, J. K. H. Rough, J. D. Greene, A. A. Desai, C. H. Chadwick, W. D. Meisburger, Jau Jack Y, M. Y. Ling, R. R. Simmons, P. A. Wieczorek, S. C. Wong, L. A. Honfi, P. Sandland, Zhongwei Chen, A. Dutta, S. G. Lele
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 9:3005
SEMSpec is a scanning electron‐beam inspection system designed for high‐resolution die‐to‐die inspections of conductive x‐ray masks, wafer prints, or stencil masks in a production environment. The inspection sensitivity can be varied from 9