Zobrazeno 1 - 10
of 280
pro vyhledávání: '"H. Jürgensen"'
Publikováno v:
Diamond and Related Materials. 6:1301-1305
In this study a range of MOVPE systems for high temperature epitaxial growth processes, such as SiC and group III nitrides, is presented. It is shown that extensive modelling of the heat transfer, gas flow and reactant depletion has led to highly eff
Autor:
Michael L. Hitchman, G.W. Andrews, B. Schulte, A. Brown, H. Jürgensen, G. Lengeling, T. Freltoft, P. Vase, Sarkis H. Shamlian, B.C. Richards, D.L. Pinch, Y.Q. Shen, S.L. Cook, C.I.M.A. Spee, J.L. Linden
Publikováno v:
Physica C: Superconductivity. 252:229-236
MOCVD of superconducting YBa 2 Cu 3 O 7δ thin films using the novel fluorinated barium β-diketonate complex [Ba(TDFND) 2 ·tetraglyme] 1 in combination with [Y(TMHD) 3 ] 2 and [Cu(TMHD) 2 ] is reported. The Ba complex has a low melting point (72°C
Publikováno v:
AIP Conference Proceedings.
Given a sequence of events, how does one recognize that a change has occurred? We explore potential definitions of the concept of change in a sequence and propose that words in relativized solid codes might serve as indicators of change.
Akademický článek
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Autor:
H. Jürgensen
Publikováno v:
Microelectronic Engineering. 18:119-148
High-performance ICs and OEICs rely on complex epitaxial heterostructures with tight bandgap engineering. Related development and production require homogeneous material, manufacturing of batches of comparable wafers, in-situ multiwafer fabrication,
Autor:
I. Grant, F. Schulte, Marko Societe Civile S P Erman, M. Renaud, D. Schmitz, J. Le Bris, H. Jürgensen, M. Heyen, C. Steinberger
Publikováno v:
Optical and Quantum Electronics. 23:391-404
Ga x In1−x As y P1−y alloys lattice matched to InP substrates are currently used to fabricate optoelectronic and integrated optics devices. To achieve devices with high performances and high fabrication yield, the uniformity and reproducibility o
Akademický článek
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Autor:
H. Jürgensen, A.A. Wolfson, Yu. A. Vodakov, M. S. Ramm, S. Yu. Karpov, Alexandr Dmitrievich Roenkov, A. G. Ostroumov, M.G. Ramm, E. N. Mokhov, Yu.N. Makarov
Publikováno v:
MRS Proceedings. 482
Thick epitaxial layers of GaN on SiC and sapphire are grown by using the sublimation sandwich method. It is shown that growth of good quality GaN crystals with the growth rates up to 0.5 mm/hour is possible using this technique. The grown layers have
Autor:
H. Jürgensen, L. Robbins
Publikováno v:
JUCS-Journal of Universal Computer Science 2(5): 347-379
In the spirit of Shannon s theory of secrecy systems we analyse several possible natural definitons of the notion of perfect secrecy, these definitions are based on arguments taken from probability theory, information theory, the theory of computatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d27dc1efd585de59c8d19304149136fb
https://zenodo.org/record/6995228
https://zenodo.org/record/6995228
Autor:
H. Jürgensen, Jean-Luc Rouvière, B. Šantić, C. Hoffmann, J. Wagner, Y. Lu, D. Behr, M. Arlery, U. Kaufmann, R. Niebuhr, K.H. Bachem
Publikováno v:
MRS Proceedings. 449
AlGaN/GaN single quantum wells (QW) have been grown on 2” sapphire substrates (c-plane) by metal-organic chemical vapor deposition (MOCVD). The well width was varied between 20 and 40 Å for barriers containing 4 % and 16 % of aluminium. Cathodolum