Zobrazeno 1 - 10
of 32
pro vyhledávání: '"H. Hovel"'
Autor:
K.K. Chan, R. Viswanathan, Fariborz Assaderaghi, L. Shi, C. Wann, Yuan Taur, Keith Jenkins, Stephan A. Cohen, H. Hovel, D. K. Sadana, Yoo-Mi Lee, Shalom J. Wind
Publikováno v:
IEEE Electron Device Letters. 18:625-627
We report room-temperature 0.07-/spl mu/m CMOS inverter delays of 13.6 ps at 1.5 V and 9.5 ps at 2.5 V for an SOI substrate; 16 ps at 1.5 V and 12 ps at 2.5 V for a bulk substrate. This is the first room-temperature sub-10 ps inverter ring oscillator
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4ebe08b8f4e595a5891612eafbefd399
https://doi.org/10.1109/55.644091
https://doi.org/10.1109/55.644091
Autor:
H. Hovel
Publikováno v:
SIMOX ISBN: 9780863413346
This chapter focuses mainly on the electrical and optical characterisation of SIMOX starting material for CMOS applications. Optical characterisation is used for determining the thicknesses of the Si and BOX layers as well as their thickness uniformi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df0c9df302df190f59653e75f0024bae
https://doi.org/10.1049/pbep004e_ch5
https://doi.org/10.1049/pbep004e_ch5
Autor:
F. Assaderaghi, G.G. Shahidi, M. Hargrove, K. Hathorn, H. Hovel, S. Kulkarni, W. Rausch, D. Sadana, D. Schepis, R. Schulz, D. Yee, J. Sun, R. Dennard, B. Davari
Publikováno v:
1996 Symposium on VLSI Technology. Digest of Technical Papers.
In this paper we experimentally demonstrate that the switching speed of digital circuits built from Non-Fully Depleted (NFD) SOI MOSFETs show a time dependence. Using a very high-bandwidth setup and pulses as short as 1 nsec, the magnitude and range
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8105f06175dbc99ea0c9d25d487ee55e
https://doi.org/10.1109/vlsit.1996.507817
https://doi.org/10.1109/vlsit.1996.507817
Autor:
F. Assaderaghi, A. Bryant, Melanie J. Sherony, Lawrence F. Wagner, J. Lasky, R. Bolam, Dominic J. Schepis, Effendi Leobandung, A. Ajmera, M. Coffey, D. K. Sadana, Dan Moy, H. Hovel, T.-C. Chen, M. Maloney, Jeffrey W. Sleight, Bijan Davari, H.-S. Lo, K. Wu, Werner A. Rausch, Ghavam G. Shahidi
Publikováno v:
1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345).
Partially-depleted deep sub-micron CMOS on SOI technology is becoming a mainstream technology. This technology offers 20-35% performance gain over a bulk technology implemented with the same lithography. In this paper, the challenges of mainstreaming
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e2f326a637bd63f5db59f67a9a5913
https://doi.org/10.1109/soi.1999.819828
https://doi.org/10.1109/soi.1999.819828
Publikováno v:
Journal of Applied Physics. 101:114513
It has been reported previously [N. Bresson et al., Proceedings of the ECS Seventh International Symposium on Silicon-on-Insulator Technology and Devices, 2005 (unpublished), pp. 317–324; F Allibert et al., Proceedings of the IEEE International SOI
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a856296028db1fc60d3880c9d336cf38
https://doi.org/10.1063/1.2745398
https://doi.org/10.1063/1.2745398
Publikováno v:
ResearcherID
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa738aa0233cf1144e072a13c657f128
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000079749100014&KeyUID=WOS:000079749100014
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000079749100014&KeyUID=WOS:000079749100014
Autor:
P.K. Vasudev, J. Bennett, S. Jackett-Murphy, W.P. Maszara, H. Hovel, C.F.H. Gondran, R. Dockerty, T. Boden, M.J. Anc
Publikováno v:
Scopus-Elsevier
Summary form only given. Internal thermal oxidation (ITOX) has been shown to improve the quality of buried oxide (BOX) in low dose (4E17 cm/sup -2/) SOI SIMOX material. SOI film quality of ITOX SIMOX was determined to be as good as bulk in terms of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::87f923887f99d128f8ccb91019c10bed
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031362871&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0031362871&partnerID=MN8TOARS
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