Zobrazeno 1 - 10
of 65
pro vyhledávání: '"H. Hody"'
Akademický článek
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Autor:
M. Thesberg, Z. Stanojevic, O. Baumgartner, C. Kernstock, D. Leonelli, M. Barci, X. Wang, X. Zhou, H. Jiao, G.L. Donadio, D. Garbin, T. Witters, S. Kundu, H. Hody, R. Delhougne, G. Kar, M. Karner
Owing to the increasing interest in the commercialization of phase-change memory (PCM) devices, a number of TCAD models have been developed for their simulation. These models formulate the melting, amorphization and crystallization of phase-change ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4162c07533c5f97553bcd5bf1c7e9376
http://arxiv.org/abs/2211.06084
http://arxiv.org/abs/2211.06084
Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control
Autor:
S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. J. van Setten, A. Chasin, S.H. Sharifi, K. Banerjee, H. Puliyalil, S. Kundu, M. Pak, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, D. Batuk, J. Geypen, J. Heijlen, R. Delhougne, G. S. Kar
Publikováno v:
2022 International Conference on IC Design and Technology (ICICDT).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::51f5d1a5fa12853fb235792ac034f93d
https://doi.org/10.1109/icicdt56182.2022.9933087
https://doi.org/10.1109/icicdt56182.2022.9933087
Autor:
J.J. Clerix, L. Warad, J. Hung, H. Hody, F. Van Roey, G. Lorusso, R. Koret, W.T. Lee, K. Shah, A. Delabie
Publikováno v:
Applied Surface Science. 626:157222
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43433498907d85b9ff3fd1b1e5b0c31f
https://doi.org/10.1016/j.apsusc.2023.157222
https://doi.org/10.1016/j.apsusc.2023.157222
Autor:
S. Subhechha, N. Rassoul, A. Belmonte, H. Hody, H. Dekkers, M. J. van Setten, A. Chasin, S.H. Sharifi, S. Sutar, L. Magnarin, U. Celano, H. Puliyalil, S. Kundu, M. Pak, L. Teugels, D. Tsvetanova, N. Bazzazian, K. Vandersmissen, C. Biasotto, D. Batuk, J. Geypen, J. Heijlen, R. Delhougne, G. S. Kar
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8dfafc52d9b69a3f5065f4a459005b8
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830448
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830448
Autor:
Xavier Rottenberg, Anabel De Proft, Kristof Lodewijks, G. L. Donadio, Daniele Garbin, Romain Delhougne, Ludovic Goux, Gouri Sankar Kar, H. Hody, Thomas Witters
Publikováno v:
IEEE Transactions on Electron Devices. 67:4228-4233
The use of carbon-based (C-based) liners is investigated for RESET current reduction in self-heating, pillar-shaped phase-change memory (PCM) cells for storage class memory (SCM) technologies. The liner is inserted between the top electrode and the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9c8080b107bbfe31645b9cea1b383b6
https://doi.org/10.1109/ted.2020.3016625
https://doi.org/10.1109/ted.2020.3016625
Autor:
A. Belmonte, H. Oh, S. Subhechha, N. Rassoul, H. Hody, H. Dekkers, R. Delhougne, L. Ricotti, K. Banerjee, A. Chasin, M. J. van Setten, H. Puliyalil, M. Pak, L. Teugels, D. Tsvetanova, K. Vandersmissen, S. Kundu, J. Heijlen, D. Batuk, J. Geypen, L. Goux, G. S. Kar
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e4c53e74474b5d2daaa435c1ec9f604
https://doi.org/10.1109/iedm19574.2021.9720596
https://doi.org/10.1109/iedm19574.2021.9720596
Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability
Autor:
H. Hody, Andrea Fantini, S. H. Sharifi, Robin Degraeve, Thomas Witters, J. Van Houdt, D. Crotti, Ludovic Goux, Valery V. Afanas'ev, Gouri Sankar Kar, Daniele Garbin, T. Ravsher
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Next-generation memory technologies utilizing crosspoint-array architecture require a two-terminal selector element with strong non-linearity, to suppress leakage currents. A promising candidate for this role is metal-semiconductor-metal (MSM) device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::446e51f1f056f5600d0b19ad1e999fb7
https://doi.org/10.1109/imw51353.2021.9439629
https://doi.org/10.1109/imw51353.2021.9439629
Autor:
Wouter Devulder, Gouri Sankar Kar, Thomas Witters, J. Radhakrishnan, Attilio Belmonte, Augusto Redolfi, Guy Vereecke, Laura Nyns, P. Kumbhare, Ludovic Goux, A. Covello, Alexis Franquet, G. L. Donadio, Valentina Spampinato, M. Mao, Romain Delhougne, H. Hody, Shreya Kundu
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
In this abstract, we report for the first time the low-current performance enhancement combined with the improvement of the scaling potential in CBRAM devices by adopting an etch-friendly alternative material, Co, as active electrode, based on theore
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b5320d0020c3fe494bd88dbc76dea29
https://doi.org/10.1109/iedm19573.2019.8993527
https://doi.org/10.1109/iedm19573.2019.8993527
Autor:
H. Hody, S. H. Sharifi, Jianhong Wu, Siddharth Rao, R. Carpenter, F. Yasin, Kevin Garello, N. Jossart, Johan Swerts, K. K. V. Sethu, Laurent Souriau, M. Pak, Woojin Kim, Sebastien Couet, Gouri Sankar Kar, D. Crotti, Arnaud Furnemont
Publikováno v:
2019 Symposium on VLSI Circuits
2019 Symposium on VLSI Circuits, Jun 2019, Kyoto, France. pp.T194-T195, ⟨10.23919/VLSIC.2019.8778100⟩
VLSI Circuits
2019 Symposium on VLSI Circuits, Jun 2019, Kyoto, France. pp.T194-T195, ⟨10.23919/VLSIC.2019.8778100⟩
VLSI Circuits
We propose a field-free switching SOT-MRAM concept that is integration friendly and allows for separate optimization of the field component and SOT/MTJ stack properties. We demonstrate it on a 300 mm wafer, using CMOS-compatible processes, and we sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::43779dc1a8bc27d577fdc1bdd8f0b51e
https://hal.archives-ouvertes.fr/hal-03239895/file/VLSI_SOT-MRAM_FieldFree_vff.pdf
https://hal.archives-ouvertes.fr/hal-03239895/file/VLSI_SOT-MRAM_FieldFree_vff.pdf