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Autor:
H. Hier, Keith W. Goossen, Ayub Fathimulla, Leye Aina, Nupur Bhargava, Victor A. Rodriguez-Toro, James Kolodzey, Ramsey Hazbun, L. Ramdas Ram-Mohan
Publikováno v:
Infrared Physics & Technology. 69:211-217
The addition of nitrogen to III–V alloys has been widely studied as a method of modifying the band gap for mid-infrared (IR) applications. Lattice matching these alloys to convenient substrates such as GaSb, however, is challenging due to the signi
Autor:
Ayub Fathimulla, H. Hier, Matthew Coppinger, Leye Aina, Mark Lecates, James Kolodzey, Nurpur Bhargava, Keith W. Goossen
Publikováno v:
Infrared Physics & Technology. 52:310-316
This paper will describe the first-of-a-kind development and demonstration of dilute nitride strained layer superlattice detectors with detectivity as high as 4 × 10 10 cm Hz 1/2 /W and cut-off wavelength of 11-μm for an LWIR design and a cut-off w
Publikováno v:
IEEE Photonics Technology Letters. 17:600-602
A new type of waveguide-based demultiplexer is made in a GaAs-AlGaAs system with a grating-assisted codirectional coupler structure to pick out the wanted wavelength. Two waveguides that are made vertically coupled are fabricated using a special back
Effect of barrier material on the two‐dimensional electron gas in δ‐doped GaInAs‐based quantum wells
Publikováno v:
Journal of Applied Physics. 79:9196-9199
We have observed two oscillations due to the first two subbands of the two‐dimensional electron gas in δ‐doped AlAs0.56Sb0.44/Ga0.47In0.53As and Al0.48In0.52As/Ga0.47In0.53As quantum well by Shubnikov–de Haas measurements. From the electron de
Autor:
M. Ahoujja, D. P. Wang, W. C. Mitchel, J.-P. Cheng, H. Hier, K. Y. Hsieh, Ikai Lo, T. F. Wang, A. Fathimulla
Publikováno v:
Physical Review B. 52:14671-14676
We have studied the electronic properties of \ensuremath{\delta}-doped ${\mathrm{Al}}_{0.48}$${\mathrm{In}}_{0.52}$As/${\mathrm{Ga}}_{0.47}$${\mathrm{In}}_{0.53}$As heterostructure samples by Shubnikov--de Haas and quantum-Hall-effect measurements. T
Autor:
W. L. Sarney, S. P. Svensson, H. Hier, D. Donetsky, D. Wang, L. Shterengas, S. Suchalkin, G. Belenky, Giti A. Khodaparast, Michael B. Santos, Christopher J. Stanton
Publikováno v:
AIP Conference Proceedings.
Infrared (IR) detector materials based on III‐V semiconductors are an affordable alternative to HgCdTe, which is the current material of choice for most high performance IR focal plane array systems fielded in the Army. Based on the assumption that
Publikováno v:
IEEE Electron Device Letters. 22:5-7
Depletion-mode doped-channel field effect transistors (DCFETs) using a AlAs/sub 0.56/Sb/sub 0.44//In/sub 0.53/Ga/sub 0.47/As heterostructure with multiple channels grown by molecular beam epitaxy (MBE) on an InP substrate are presented. Devices with
Publikováno v:
Canadian Journal of Zoology. 69:328-333
We examined diets of Lesser Scaup (Aythya affinis) during midwinter (N = 41) in southwestern Louisiana (1986), and during spring (N = 57) and fall (N = 48) in northwestern Minnesota (1984–1988). Diets of males and females generally were similar dur
Publikováno v:
Physical Review B. 41:7860-7863
We have studied the current-voltage (I-V) characteristics of a double-barrier, lattice-matched ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{In}}_{\mathit{x}}$As/${\mathrm{Al}}_{1\mathrm{\ensuremath{-}}\mathit{y}}$${\mathrm{In}}_{\mat