Zobrazeno 1 - 10
of 43
pro vyhledávání: '"H. Heussen"'
Autor:
Wouter Fransman, Mario Arnone, Francesca Borghi, Andrea Cattaneo, Domenico M Cavallo, John W Cherrie, Remy Franken, Karen S Galea, Rudolf van der Haar, Gerardus A H Heussen, Keld A Jensen, Milja Koponen, Dorothea Koppisch, Hans Kromhout, Yu-Syuan Luo, Kevin McNally, Arto Säämänen, Andrea Spinazzè, Martie van Tongeren, Jeroen Vanoirbeek, Steven Verpaele, Daniel Vetter, Susana Viegas, Nick Warren
Publikováno v:
Fransman, W, Arnone, M, Borghi, F, Cattaneo, A, Cavallo, D M, Cherrie, J W, Franken, R, Galea, K S, Van Der Haar, R, Heussen, G A H, Jensen, K A, Koponen, M, Koppisch, D, Kromhout, H, Luo, Y S, McNally, K, Säämänen, A, Spinazzè, A, Van Tongeren, M, Vanoirbeek, J, Verpaele, S, Vetter, D, Viegas, S & Warren, N 2022, ' Response Letter to Koivisto et al. 'Evaluating the Theoretical Background of STOFFENMANAGER® and the Advanced REACH Tool' ', Annals of Work Exposures and Health, vol. 66, no. 4, pp. 543-549 . https://doi.org/10.1093/annweh/wxac001
In this article, we have responded to the key statements in the article by Koivisto et al. (2022) that were incorrect and considered to be a biased critique on a subset of the exposure models used in Europe (i.e. ART and Stoffenmanager®) used for re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0827d2db85896189e6a75fd86dc7fee8
http://hdl.handle.net/11383/2133564
http://hdl.handle.net/11383/2133564
Autor:
C. Schilling, H. Heußen, Lutz Kirste, Rachid Driad, Ralf Ostendorf, Quankui Yang, Stefan Hugger, Rolf Aidam
Publikováno v:
Journal of Crystal Growth. 513:1-5
Design and growth characteristics of broadly tunable hetero-cascading quantum cascade lasers are discussed. We show the influence of electric field variation, and interface roughness on the gain spectra. Interface roughness is shown to play an import
Publikováno v:
Gefahrstoffe. 79:385-390
Die Gefahrstoffverordnung (GefStoffV) und das technische Regelwerk verpflichten Betriebe bei Tätigkeiten mit Gefahrstoffen außer zur Durchführung einer Gefährdungsbeurteilung unter anderem zu einer Substitutionsprüfung, zur Führung eines Gefahr
Autor:
M. Benecke, H. Heußen, R. Rehm, A. Sieck, R. Aidam, B. Göhler, A. Bächle, F. Rutz, P. Lutzmann, S. Brunner, W. Bronner
Publikováno v:
Electro-Optical and Infrared Systems: Technology and Applications XV.
High-performance short-wavelength infrared (SWIR) photodetectors can be realized in the InGaAs material system, providing a typical cutoff wavelength of 1.7 μm, which covers a wide part of the nightglow spectrum as well as the emission lines of avai
Publikováno v:
physica status solidi (a). 213:925-929
We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) imaging applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading,
Publikováno v:
Infrared Physics & Technology. 71:298-302
We report on the development of mesa-processed InGaAs/InAlAs avalanche photodiodes (APDs) for short-wave infrared (SWIR) applications with demand for high gain and low breakdown voltage. Devices are designed with separate absorption, grading, charge
Autor:
Paul T.J. Scheepers, G. A. H. Heussen
Publikováno v:
Biomarkers. 13:133-144
Validated biological monitoring methods are used in large-scale monitoring programmes involving determination of ubiquitous environmental pollutants such as metals and pesticides. Some programmes focus on children's exposure, and policies to prevent
Publikováno v:
Image Sensing Technologies: Materials, Devices, Systems, and Applications II.
For surveillance and reconnaissance applications in the short-wave infrared (SWIR) spectral range, the imaging systems have to cope with usually very low photon flux densities. Thus, dark-current and noise characteristics of the focal plane array (FP
Autor:
Paul T.J. Scheepers, G. A. H. Heussen
Publikováno v:
Biomarkers. 10:80-94
Publikováno v:
SPIE Proceedings.
We report on the development and optimization of mesa-processed InGaAs/InAlAs avalanche photodiodes (APD)for short-wave infrared applications with demand for high gain and low breakdown voltage. The APDs weregrown by molecular beam epitaxy. Dark and