Zobrazeno 1 - 10
of 59
pro vyhledávání: '"H. Hearne"'
Autor:
Quentin P. Herr, Lee Timothy Chi Chao, Clarke Ryan Edward, Anna Y. Herr, Jacob Vogel, H. Hearne, Randall Burnett
Publikováno v:
MEMSYS
Recent efforts to develop cryogenic processors are based on the elemental superconductor, niobium, and function at 4K. Since conventional silicon-based solutions will not operate at this temperature, new niobium-based memory elements are required. To
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e8a64e72887839e13a221727794fafb
https://doi.org/10.1145/3240302.3270313
https://doi.org/10.1145/3240302.3270313
Autor:
Robert S. Howell, Deas Brown, H. George Henry, H. Hearne, Andris Ezis, Randall D. Lewis, Dale Dawson
Publikováno v:
Microelectronics Reliability. 54:2682-2687
The authors present a methodology for extrapolating the safe operating area for HBTs, accounting for variations in emitter area and ballast resistor size. Measurements of SOA curves for HBTs with varying emitter areas and ballast resistor sizes were
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c0fd39320151776b3605acba6becc65
https://doi.org/10.1016/j.microrel.2014.09.018
https://doi.org/10.1016/j.microrel.2014.09.018
Autor:
Ty McNutt, Andris Ezis, S. Van Campen, S. Buchoff, Ranbir Singh, Robert S. Howell, Marc Sherwin, Rowland C. Clarke, H. Hearne
Publikováno v:
IEEE Transactions on Electron Devices. 55:1816-1823
Three large-area 10-kV 4H-SiC DMOSFET designs are compared with respect to their design, die area, breakdown yield, and ON-state yield. The largest of these DMOSFETs had 0.62 cm2 of active area on a 1-cm2 die, with a 10-kV device producing 40 A at a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94157b76efb7561bd52278b3d0c562d
https://doi.org/10.1109/ted.2008.926684
https://doi.org/10.1109/ted.2008.926684
Autor:
Jeremy Junghans, Megan Snook, Ty McNutt, H. Hearne, Victor Veliadis, Charles Scozzie, P. Potyraj
Publikováno v:
International Journal of Power Management Electronics, Vol 2008 (2008)
SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fd8eb0fc8f6874302fabb1492694f540
https://doi.org/10.1155/2008/523721
https://doi.org/10.1155/2008/523721
Autor:
H. Hearne, Kathy Ha, Bettina Nechay, TY McNUTT, Thomas Roettger, Marc Sherwin, Kevin Motto, Robert S. Howell, Andy Walker, Steve Van Campen, Scott Leslie, Ranbir Singh, Jason Lai, Dustin Gutshall
Publikováno v:
Naval Engineers Journal. 119:65-72
Northrop Grumman Corporation has been developing 10 kV SiC MOSFETs and Junction Barrier Schottky diodes for application to a 13.8 kV 2.7 MVA solid-state power substation. The design of half-bridge power modules has extensively used simulation, from e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae1f15fe8ca1d75e284b768acc8303b4
https://doi.org/10.1111/j.1559-3584.2007.00024.x
https://doi.org/10.1111/j.1559-3584.2007.00024.x
Autor:
Robert S. Howell, S. Woodruff, D. Giorgi, El-Hinnawy Nabil, H. Hearne, Stuart Davis, Megan Snook, R. E. Stahlbush, Joseph M. White, T. McNutt, Victor Veliadis, B. Nechay
Publikováno v:
IEEE Electron Device Letters. 33:764-766
SiC device area is currently limited by material and processing defects. To meet the large current handling requirements of modern power conditioning systems, paralleling of a large number of devices is required. This can increase cost and complexity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d67a743443a94245a9fecbdfc3f7cc8a
https://doi.org/10.1109/led.2012.2192089
https://doi.org/10.1109/led.2012.2192089
Publikováno v:
IEEE Electron Device Letters. 31:470-472
A normally-on 9-kV (at 0.1-mA/cm2 drain leakage) 1.52 × 10-3-cm2 active-area vertical-channel SiC JFET (VJFET) is fabricated with no e-beam lithography, no epitaxial regrowth, and a three-step junction-termination-extension edge termination, which i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8be7f1c5e042d9cd2188a56f3ffe591
https://doi.org/10.1109/led.2010.2042030
https://doi.org/10.1109/led.2010.2042030
Autor:
Eric J. Stewart, Victor Veliadis, Robert S. Howell, Aivars J. Lelis, Megan Snook, Charles Scozzie, T. McNutt, H. Hearne, H. C. Ha
Publikováno v:
IEEE Electron Device Letters. 30:736-738
A recessed-implanted-gate (RIG) 1290-V normally-off (N-OFF) 4H-SiC vertical-channel JFET (VJFET), fabricated with a single masked ion implantation and no epitaxial regrowth, is evaluated for efficient power conditioning applications. The relationship
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::986840c3f77992bf3cf766aa6f07fcfd
https://doi.org/10.1109/led.2009.2021491
https://doi.org/10.1109/led.2009.2021491
Autor:
H. Hearne, Charles Scozzie, Megan Snook, Aivars J. Lelis, P. Potyraj, Victor Veliadis, T. McNutt
Publikováno v:
IEEE Electron Device Letters. 29:1325-1327
A normally on 4H-SiC vertical-junction field-effect transistor (VJFET) of 6.8-mm2 active area was manufactured in seven photolithographic levels with no epitaxial regrowth and a single masked ion-implantation event. The VJFET exhibits low leakage cur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5399aec3463fddba8bd3cfe74cb59de0
https://doi.org/10.1109/led.2008.2006766
https://doi.org/10.1109/led.2008.2006766
Publikováno v:
IEEE Electron Device Letters. 29:1132-1134
A high-voltage normally ON 4H-SiC vertical junction field-effect transistor (VJFET) of 0.143- cm2 active area was manufactured in seven photolithographic levels with no epitaxial regrowth and with a single masked ion-implantation event. The VJFET exh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::066a4526259c81c6da5e90fc46184f2a
https://doi.org/10.1109/led.2008.2002907
https://doi.org/10.1109/led.2008.2002907