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pro vyhledávání: '"H. Hamadeh"'
Akademický článek
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Autor:
René Thieme, Orestis Lyros, Yusef Moulla, Ines Gockel, Matthias Mehdorn, Stefan Niebisch, H Hamadeh, K Schierle, Boris Jansen-Winkeln
Publikováno v:
Zeitschrift für Gastroenterologie.
Background: Physicians' adherence to guideline-recommended therapy is associated with short-term clinical outcomes in heart failure (HF) with reduced ejection fraction (HFrEF). However, its impact on longer-term outcomes is poorly documented. Here, w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2127::2c9985f3e999aeb205f0a286bc4827b6
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3105897
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3105897
Akademický článek
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Autor:
H. Hamadeh
Publikováno v:
Renewable Energy. 35:1419-1423
A comparison of the temperature dependence of the IV characteristics parameters of hydrogenated silicon pin solar cells with intrinsic layers made of polymorphous silicon (pm-Si:H) and of μc-Si:H with low crystalline volume fraction has been perform
Autor:
H. Hamadeh, M. Naddaf
Publikováno v:
Materials Science and Engineering: C. 29:2092-2098
The effect of low power density of ~ 5 μW/cm2 monochromatic light of different wavelengths on the visible photoluminescence (PL) properties of photo-electrochemically formed p-type porous silicon (PS) has been investigated. Two-peak PL “red” and
Publikováno v:
Journal of Physics D: Applied Physics. 40:4015-4020
Room temperature photoluminescence (PL) from plasma-polymerized hexamethyldisiloxane (PP-HMDSO) thin films deposited on silicon wafers has been investigated as a function of both the applied RF power and the monomer flow rate. Films were deposited in
Publikováno v:
Materials Science and Engineering B. 113:166-169
Publikováno v:
physica status solidi (b). 229:333-337
A comparative study of the photoluminescence, reflection, and photoluminescence excitation spectra of MBE- and MOVPE-grown nitrogen-doped ZnSe samples has been carried out. MOVPE-grown samples demonstrate impurity recombination via shallow donor stat
Publikováno v:
Journal of Crystal Growth. :567-571
A modification of the potential fluctuation model is proposed to explain the experimentally observed dependencies of the band shape and maximum position of the impurity luminescence in ZnSe samples highly doped with nitrogen on the doping level, exci