Zobrazeno 1 - 10
of 19
pro vyhledávání: '"H. H. Hosack"'
Autor:
Victor V. Zhirnov, Daniel J. C. Herr, T. A. Wooldridge, George I. Bourianoff, J.A. Hutchby, W. H. Joyner, H. H. Hosack, Ralph K. Cavin
Publikováno v:
Journal of Nanoparticle Research. 7:573-586
This paper presents a summary of the second workshop on Silicon Nanoelectronics and Beyond held at the National Science Foundation in Washington DC in December 2004. The objective was to set research directions to vigorously pursue both extending the
Autor:
H. H. Hosack
Publikováno v:
The Electrochemical Society Interface. 2:51-57
Publikováno v:
Journal of Applied Physics. 73:1461-1470
A closed form analytic solution to the growth characteristics of the separation by implantation of oxygen (SIMOX) buried oxide and silicon film, based on a two‐sided Gaussian approximation to the oxygen implant profile in the SIMOX process, is pres
Autor:
M. K. El-Ghor, J. Hollingsworth, H. H. Hosack, George A. Brown, Keith A. Joyner, Gordon P. Pollack
Publikováno v:
IEEE International SOI Conference.
Publikováno v:
Proceedings. IEEE International SOI Conference.
The integrity of gate oxides formed on the device surfaces of SIMOX wafers has been a concern because of the structural imperfection of SIMOX superficial silicon layers compared to bulk silicon and the potential for metal contamination during the ext
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors describe the results of an analytic investigation of SIMOX (separation by implanted oxygen) oxide/silicon profiles using a joined half-Gaussian approximation to the instantaneous oxygen implant distribution. The advantage of this approach
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors report on an extensive study of a Secco etch process for determining dislocation densities that was performed by three different groups using nine SIMOX (separation by implanted oxygen) wafers from the same lot. The average dislocation de
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
An array of artificial particles composed of silicon dioxide was created by growing a film of SiO/sub 2/ one micron thick on a wafer surface, then patterning and etching the film to create barriers of various sizes and shapes. Two of the more interes
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors present a method for investigating buried oxide defects after the initial patterning and etching of the superficial silicon layer on a SOI (silicon-on-insulator) wafer. This method is based on the principle of charged-induced scanning ele
Publikováno v:
Applied Physics Letters. 62:2090-2092
Arsenic and phosphorus are often implanted into silicon for localized doping during the processing of integrated circuits. The implant damages the silicon lattice, resulting in crystal defects during annealing. Crystal defects observed by transmissio