Zobrazeno 1 - 6
of 6
pro vyhledávání: '"H. H. Busta"'
Autor:
H. H. Busta, R. W. Pryor
Publikováno v:
Journal of Applied Physics. 82:5148-5153
Electron emission from a ∼100-nm-thick, laser ablated and laser annealed, carbon-doped BN film deposited on polycrystalline diamond was measured at room temperature and at pressures of about 1×10−8 Torr. For a 500-μm-diam extraction electrode,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2a1649a2879f2294de1fa7d94f92533
https://doi.org/10.1063/1.366318
https://doi.org/10.1063/1.366318
Publikováno v:
Journal of Micromechanics and Microengineering. 4:110-115
A fluxless soldering technique has been developed for the attachment of optoelectronic components to silicon submounts by laser soldering of gold-coated indium solder pads. By keeping the solder time per pad at 60 msec, and by adhering to a solder sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbc755642033b5f1f12787f6d4d20f3e
https://doi.org/10.1088/0960-1317/4/3/003
https://doi.org/10.1088/0960-1317/4/3/003
Publikováno v:
MRS Proceedings. 509
New observations are presented on the emission of electrons from n-type boron nitride (BN) cold cathode films. These carbon-doped BN films demonstrate a significant improvement in the electron emission current, on the order of 1 to 3 orders of magnit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98730fefeee6f739c2c14ec47cd428c3
https://doi.org/10.1557/proc-509-113
https://doi.org/10.1557/proc-509-113
Autor:
H. H. Busta, K. Y. Tsao
Publikováno v:
Journal of The Electrochemical Society. 131:2702-2708
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed8677fc7fb50e0447aeaf1c3d10d558
https://doi.org/10.1149/1.2115387
https://doi.org/10.1149/1.2115387
Autor:
H. H. Busta, K. Y. Tsao
Publikováno v:
Chemischer Informationsdienst. 16
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::839ec4f26534fe677e647d1fa3d35c0c
https://doi.org/10.1002/chin.198512036
https://doi.org/10.1002/chin.198512036
Autor:
P. C. Tack, H. H. Busta
Publikováno v:
1986 Solid-State, Actuators, and Microsystems Workshop Technical Digest.
A finite element program analysis was used to model the stress distribution of two monocrystalline silicon diaphragm pressure sensors. One configuration consists of an anisotropically backside etched diaphragm into a 250 micron thick, (100) oriented,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b600a6f8d910ecb70958c883387f0d87
https://doi.org/10.31438/trf.hh1986.14
https://doi.org/10.31438/trf.hh1986.14