Zobrazeno 1 - 10
of 64
pro vyhledávání: '"H. Gustat"'
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 60:2524-2531
A tunable fourth-order bandpass ΔΣ modulator (BDSM) designed and fabricated in 0.25μm SiGe BiCMOS technology is presented. The designed modulator relaxes switching conditions for the amplification stage of the switch-mode power amplifier in compar
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 59:2254-2264
This paper presents an approach to implement a high-speed binary weighted digital-to-analog converter (DAC). A different current switching mechanism is proposed that improves the dynamic performance of binary weighted DACs. Circuit simulation shows a
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:1767-1770
A frequency synthesizer combining a relatively large tuning range (4.12-4.72 GHz) with a low noise sensitivity is presented. A stable fine-tuning loop is combined with an unstable coarse-tuning loop in parallel. As a result, a stable phase-locked loo
Publikováno v:
IEEE Journal of Solid-State Circuits. 38:357-360
This paper presents a fully integrated highly sensitive frequency-shift keying (FSK) demodulator functioning at a modulation factor of 0.5%-0.1% and below. A dual-feedback phase-locked loop approach provides both very high sensitivity and sufficientl
Publikováno v:
IEEE Photonics Technology Letters. 22:314-316
In this letter, an analytical method in time domain for calculation of the effect of chromatic dispersion (CD) in a single-mode fiber is presented. By using Fourier series representation of a general pulse approach, the CD effect could be obtained fo
Publikováno v:
IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing. 49:427-429
This brief presents a fully integrated integer-N frequency synthesizer with a frequency-tuning range from 2.4 to 2.9 GHz and root-mean-square (rms) jitter below 2.5 ps over 350 MHz. The employed architecture using an inductance-capacitance (L-C) osci
Publikováno v:
Optical Fiber Communication Conference and National Fiber Optic Engineers Conference.
A study of thermal crosstalk between III–V hybrid integrated directly modulated laser diodes and driver IC in BiCMOS technology on SOI is presented. We derived design rules and cooling requirements from thermal modelling.
Publikováno v:
2008 European Microwave Integrated Circuit Conference.
This paper presents the design of an 8-bit 20 GS/s DAC. The DAC is implemented with a modified current steering architecture where unlike the conventional binary weighted architecture a R-2R ladder DAC architecture is used as the LSB sub-DAC. In simu
Publikováno v:
2008 38th European Microwave Conference.
A fully integrated broadband push-pull power amplifier (PA) has been developed and fabricated in a 0.25 mum SiGe-HBT technology. Monolithic transformers are used to transform the 50 iquest input/output of the amplifier to the optimum load and source
Publikováno v:
2008 IEEE Compound Semiconductor Integrated Circuits Symposium.
A novel SiGe ECL/CML design flow is presented for the first time. It provides CMOS-style synthesis with differential SiGe BiCMOS ECL standard cells. A first version works in a 95 GHz one-mask HBT technology up to about 10 GHz clock rate. A synthesize