Zobrazeno 1 - 10
of 99
pro vyhledávání: '"H. Gossmann"'
Autor:
R. Pfab, J. Birkmann, W. Zeller, H. H. Gossmann, Hubert Köppler, Karl-Heinz Pflüger, C. Gropp, H. Kuhn, E. U. Steinhauer, Klaus Havemann, E. Lötzke, S. Oehl, Harald Stein, I. Eschenbach, Karl Lennert, P. Drings
Publikováno v:
Hematological Oncology. 9:217-223
In a multicentre phase III trial 146 previously untreated patients with high grade non-Hodgkin's lymphomas stage II–IV were randomized to receive either four cycles of CHOEP (cyclophosphamide 750 mg/m2 iv d 1, doxorubicin 50 mg/m2 iv d 1, vincristi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::098f3b3ecf8307717427957aa102bc61
https://doi.org/10.1002/hon.2900090407
https://doi.org/10.1002/hon.2900090407
Autor:
Eric Garfunkel, Ahmet Refik Kortan, A. M. Sergent, H. Gossmann, J. Kwo, P. Ye, Torgny Gustafsson, Yves J. Chabal, B. Yang, W. H. Schulte, J.P. Mannaerts, J. Bude, K. K. Ng, Minghwei Hong, B. Busch, David A. Muller
Publikováno v:
Journal of Crystal Growth. 251:645-650
Our ability of controlling the growth and interfaces of thin dielectric films on III–V semiconductors by ultrahigh vacuum deposition has led to investigations of gate stacks containing rare earth oxides of Gd 2 O 3 and Y 2 O 3 as alternative high
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b6ca64c51fe89bca6581ca9fb996bd1
https://doi.org/10.1016/s0022-0248(02)02192-9
https://doi.org/10.1016/s0022-0248(02)02192-9
Autor:
H. H. Goßmann
Publikováno v:
Balint Journal. 2:122-124
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c5e2eed7e5da1dea0750771e98b6250
https://doi.org/10.1055/s-2001-18626
https://doi.org/10.1055/s-2001-18626
Autor:
D. Schepis, C.Y. Sung, H. Yin, B. Kim, B. Yang, M. Khare, L. Black, C. D. Sheraw, Donggun Park, H.V. Meer, X. Chen, J. Johnson, Andrew Waite, K. Nummy, H. Gossmann, P. Agnello, Philip A. Fisher, Scott Luning, S. Narasimha, D. Chidambarrao, Judson R. Holt, S. D. Kim, D. Wehella-gamage, Y. Liu
Publikováno v:
2007 IEEE Symposium on VLSI Technology.
This work demonstrates that the ~2times mobility advantage of (110) PMOS over (100) PMOS is maintained down to 190 nm liners poly-pitch for devices under compressive stress. (110) PMOS with 3.5 GPa compressively stressed liners demonstrate strong cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32302cf3b5b7573ebb1e823ddd71acea
https://doi.org/10.1109/vlsit.2007.4339753
https://doi.org/10.1109/vlsit.2007.4339753
Autor:
A. Agarwal, H. Gossmann
Publikováno v:
The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
The most recent release of the ITRS, the 2003 edition, describes a paradigm change that Si chip manufacturing is expected to undergo around the 65nm node. This is due to the rapid introduction of new materials and device structures required for furth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::beba5aa70a935345b8e4582e42ec29e2
https://doi.org/10.1109/iwjt.2004.1306761
https://doi.org/10.1109/iwjt.2004.1306761
Autor:
A. Agarwal, H. Gossmann
Publikováno v:
The Fourth International Workshop on Junction Technology, 2004. IWJT '04..
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d19787cca56f444c2fc834b795af3635
https://doi.org/10.1109/iwjt.2004.1306875
https://doi.org/10.1109/iwjt.2004.1306875
Autor:
Torgny Gustafsson, K. K. Ng, Ahmet Refik Kortan, Eric Garfunkel, P. Ye, H. Gossmann, W. H. Schulte, B. Yang, Yves J. Chabal, B.W. Busch, David A. Muller, A.M. Sergent, J. Kwo, J. Bude, Minghwei Hong, J.P. Mannaerts
Publikováno v:
International Conference on Molecular Bean Epitaxy.
Nanoscale device technology is driving intense study of thin dielectric layers on semiconductors. The aggressive scaling of Si CMOS technology calls for identifying high /spl kappa/ dielectrics to replace SiO/sub 2/ and oxynitrides in gate related ap
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2efddb20614e3d328d3338a1293ebd8
https://doi.org/10.1109/mbe.2002.1037753
https://doi.org/10.1109/mbe.2002.1037753
Autor:
G. Timp, K.K. Bourdelle, J.E. Bower, F.H. Baumann, T. Boone, R. Cirelli, K. Evans-Lutterodt, J. Garno, A. Ghetti, H. Gossmann, M. Green, D. Jacobson, Y. Kim, R. Kleiman, F. Klemens, A. Kornlit, C. Lochstampfor, W. Mansfield, S. Moccio, D.A. Muller, I.E. Ocola, M.I. O'Malley, J. Rosamilia, J. Sapjeta, P. Silverman, T. Sorsch, D.M. Tennant, W. Timp, B.E. Weir
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
One of the primary means for improving performance and increasing the scale of integration on a chip is the miniaturization of the electronic devices that comprise it. The SIA roadmap projects that future gains in performance will continue to accrue
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e591f659ced72b1703fe5a3ad176b659
https://doi.org/10.1109/iedm.1998.746433
https://doi.org/10.1109/iedm.1998.746433
Autor:
G. Timp, A. Agarwal, K.K. Bourdella, J. Bower, T. Boone, A. Ghetti, M. Green, J. Gamo, H. Gossmann, D. Jacobson, R. Kleiman, A. Kornblit, F. Klemens, S. Moccio, M.L. O'Malley, L. Ocola, J. Rossm-nalia, J. Sapjeta, P. Silverman, T. Sorsch, W. Timp, D. Tennani
Publikováno v:
International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
Reports measurements of the DC characteristics of sub-100nm pMOSFETs that employ low leakage, ultra-thin gate oxides only 1-2nm thick and ultra-shallow junctions to achieve high current drive capability and transconductance. We demonstrate that I/sub
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cded77e1e8e413a4a94b9f612825cbf0
https://doi.org/10.1109/iedm.1998.746534
https://doi.org/10.1109/iedm.1998.746534
Autor:
G. Timp, A. Agarwal, F.H. Baumann, T. Boone, M. Buonanno, R. Cirelli, V. Donnelly, M. Foad, D. Grant, M. Green, H. Gossmann, S. Hillenius, J. Jackson, D. Jacobson, R. Kleiman, A. Komblit, F. Klemens, J.T.-C. Lee, W. Mansfield, S. Moccio, A. Murrell, M. O'Malley, J. Rosamilia, J. Sapjeta, P. Silverman, T. Sorsch, W.W. Tai, D. Tennant, H. Vuong, B. Weir
Publikováno v:
International Electron Devices Meeting. IEDM Technical Digest.
Reports measurements of the DC characteristics of sub-100 nm nMOSFETs that employ low leakage ultra-thin gate oxides only 1-2 nm thick to achieve high current drive capability and transconductance. We demonstrate that I/sub Dsat//spl ap/1.8 mA//spl m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d3757477c7e205f6a8d694c2056d7da
https://doi.org/10.1109/iedm.1997.650534
https://doi.org/10.1109/iedm.1997.650534