Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC

Autor: E. Schiliro 1, S. Di Franco 1, P. Fiorenza 1, C. Bongiorno 1, H. Gargouri 2, M. Saggio 3, R. Lo Nigro 1, F. Roccaforte 1

Publikováno v: Materials science forum 858 (2016): 685–688. doi:10.4028/www.scientific.net/MSF.858.685
info:cnr-pdr/source/autori:E. Schiliro 1, S. Di Franco 1, P. Fiorenza 1, C. Bongiorno 1, H. Gargouri 2, M. Saggio 3, R. Lo Nigro 1, F. Roccaforte 1/titolo:Atomic layer deposition of Al2O3 thin films for metal insulator semiconductor applications on 4H-SiC/doi:10.4028%2Fwww.scientific.net%2FMSF.858.685/rivista:Materials science forum/anno:2016/pagina_da:685/pagina_a:688/intervallo_pagine:685–688/volume:858

This work reports on the growth and characterization of Al2O3 films on 4H-SiC, by Plasma Enhanced-Atomic Layer Deposition (PE-ALD). Different techniques were used to investigate the morphological, structural and electrical features of the Al2O3 films

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=cnr_________::a7354144c4c95b905e68ba237f874000
https://publications.cnr.it/doc/357650