Zobrazeno 1 - 10
of 81
pro vyhledávání: '"H. G. Robinson"'
Autor:
H. G. Robinson
This book contains a detailed guide to the buildings required for dairy cattle, including information on cowsheds, milking sheds, and loose boxes. Detailed and concise, this text will of much value to the amateur cattle farmer and anyone with an inte
Publikováno v:
Journal of Electronic Materials. 35:1399-1402
We have generalized the existing expression for the trap-assisted tunneling current to include the effect of linearly varying electric field in the depletion region and self-consistently calculated steady-state trap occupation probability. We find th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cfdf12b7eed433f6507f8f396a281c51
https://doi.org/10.1007/s11664-006-0274-y
https://doi.org/10.1007/s11664-006-0274-y
Autor:
H. G. Robinson, T. J. deLyon, K. Kosai, B. Walker, W. J. Hamilton, W. B. Johnson, M. A. Berding
Publikováno v:
Journal of Electronic Materials. 29:657-663
Excessive dopant or compositional mixing (interdiffusion) during the processing of HgCdTe photodiodes can lead to significant reductions in device performance. With the advent of multi-color and wider bandgap detectors, processes developed for single
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ce00b9322ed97781e53fc2471e6a779
https://doi.org/10.1007/s11664-000-0201-6
https://doi.org/10.1007/s11664-000-0201-6
Publikováno v:
Journal of Electronic Materials. 27:672-679
A numerical model for interdiffusion in HgTe/CdTe systems based on fundamental point defect mechanisms has been developed. The model includes continuity equations for the flux of Hg and Cd on substitutional sites, cation vacancies, and Hg and Cd inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d687862a024ea73e924ac48a1bef4f8
https://doi.org/10.1007/s11664-998-0034-2
https://doi.org/10.1007/s11664-998-0034-2
Publikováno v:
Journal of Electronic Materials. 27:583-588
Junction formation and stability in ion implanted mercury cadmium telluride critically depend on the ability to generate Hg interstitials. The creation of Hg interstitials is found to strongly depend on the preferred lattice position of the element i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3a03d04ae0fd32230bc50c3cd346e93a
https://doi.org/10.1007/s11664-998-0019-1
https://doi.org/10.1007/s11664-998-0019-1
Publikováno v:
Journal of Electronic Materials. 27:703-708
Optical absorption coefficients of un-implanted and implanted HgCdTe have been measured in a range of temperatures and compositions. The index of refraction for photon energies larger than bandgap was obtained. With the measured index of refraction,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccb69c785ee1f02d9f5cb39fa1869489
https://doi.org/10.1007/s11664-998-0040-4
https://doi.org/10.1007/s11664-998-0040-4
Publikováno v:
Journal of Electronic Materials. 26:678-682
Simulations of current-voltage characteristics of ion-implanted n-on-p photodiodes have been performed using SemiCad Device. In order to accurately simulate this device structure, several modifications to the simulator were implemented. These include
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af767c5c55f970480c140252baedb179
https://doi.org/10.1007/s11664-997-0215-4
https://doi.org/10.1007/s11664-997-0215-4
Publikováno v:
Journal of Electronic Materials. 24:1137-1142
The strategy and status of a process simulator for the flexible manufacture of HgCdTe infrared focal plane arrays is described. It has capabilities to simulate Hg vacancy and interstitial effects and cation impurity diffusion, for various boundary co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6887d8f741ae198945d3ffe12266d19f
https://doi.org/10.1007/bf02653065
https://doi.org/10.1007/bf02653065
Autor:
H. G. Robinson, J. A. Slinkman, J. K. Listebarger, Mark E. Law, Kevin S. Jones, T. O. Sedgwick, D. D. Sieloff
Publikováno v:
Journal of Applied Physics. 78:2298-2302
A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::636ed9d763f0cee7484927b24b7439e1
https://doi.org/10.1063/1.360147
https://doi.org/10.1063/1.360147
Autor:
J. Liu, B. Herner, Kevin S. Jones, H. Park, J. K. Listebarger, Mark E. Law, D. D. Sieloff, Jia’er Chen, J. A. Slinkman, H. G. Robinson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 96:196-201
Studies of the interactions between point defects introduced during semiconductor processing and dislocation loops are reviewed. The processing steps studied include oxidation, ion implantation and silicidation. By using doped marker layers it is sho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::de07f4ab2242fcff14a74c86c68c22ff
https://doi.org/10.1016/0168-583x(94)00482-x
https://doi.org/10.1016/0168-583x(94)00482-x