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pro vyhledávání: '"H. G. Parks"'
Autor:
H. G. Parks
Publikováno v:
Defect and Fault Tolerance in VLSI Systems ISBN: 9781475799590
Yield growth over a process life determines the slope of the learning curve that a given process will follow. It can be easily shown that modest differences in the slope of the learning curve can determine the survival of a product or perhaps even a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2ff0f8e8f6a5d68d2ea2fce2319b1c
https://doi.org/10.1007/978-1-4757-9957-6_21
https://doi.org/10.1007/978-1-4757-9957-6_21
Autor:
W. C. Hughes, H. G. Parks
Publikováno v:
Journal of Vacuum Science and Technology. 12:1161-1164
Recent improvements in matrix‐lens technology are reported in this paper. Previously, the lenslets have been of the three‐aperture einzel construction. An extensive computer study of three‐aperture einzel and two‐aperture immersion lenses has
Autor:
H. G. Parks, K. Rose
Publikováno v:
Journal of Electronic Materials. 10:823-844
The structure of small area (∼10 micron diameter) spots produced by Q-switched pulsed laser irradiation of n-type silicon covered by a thin film of sputtered aluminum have been studied. Spatially resolved SIMS analysis has been combined with SEM ob
Autor:
H. G. Parks
Publikováno v:
Journal of Vacuum Science and Technology. 15:1035-1038
State‐of‐the‐art achievements of matrix lens recording systems are presented in this paper. Also the primary beam limiting aberrations and physical constraints of matrix lens electron‐beam recording systems are discussed. A new concept in mat
Autor:
H. G. Parks, C. G. Kirkpatrick
Publikováno v:
AIP Conference Proceedings.
A new binary memory device is described on which information is recorded by locally alloying data sites on the surface of a metal‐coated semiconductor planar diode with a high power density beam. Readout of the emory device is achieved by scanning
Publikováno v:
MRS Proceedings. 1
In this paper we treat surface tension driven convection effects in pulsed laser formed melts. Mass transport is determined from an approximate solution of the Navier Stokes equation. It is shown that for small laser spot diameters the characteristic
Publikováno v:
MRS Proceedings. 13
Recent interest in finding an efficient method for transient annealing of ion-implanted silicon has led to studies of various rapid annealing schemes such as graphite heaters and high intensity incoherent light sources as alternative methods to laser
Publikováno v:
1982 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
The design and evaluation of a dual 128b binary-analog correlator based on charge transfer technology will be described. Correlator operates from -55° -125° C; dissipates less than 0.5W. Performance is not degraded by charge transfer losses.
Publikováno v:
MRS Proceedings. 13
Selective absorption, using patterned dielectric films, and beam shaping were used as means for improving the recrystallization of LPCVD polysilicon islands on fused quartz. IR imaging of the laser heated region was used to optimize and control the r