Zobrazeno 1 - 10
of 93
pro vyhledávání: '"H. Flietner"'
Publikováno v:
Microelectronic Engineering. 48:159-162
The dispersion behavior of traps at the Si SiO 2 interface has been investigated applying the modulation capacitance voltage method. N-type MOS samples of different material parameters and preparation conditions were used to vary the state density di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dcda21cb399d0ac2ef80b9b9bbcdfee
https://doi.org/10.1016/s0167-9317(99)00361-5
https://doi.org/10.1016/s0167-9317(99)00361-5
Publikováno v:
Applied Surface Science. :342-348
A new contactless method, the modulation CV-technique, is described which allows a very sensitive determination of surface and interface state densities as well as the complete dispersion behaviour of these states. With chemical H-termination surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7312c58b1f8ca5591c3a1849621fbb2a
https://doi.org/10.1016/s0169-4332(96)00168-7
https://doi.org/10.1016/s0169-4332(96)00168-7
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 377:177-183
The electronic properties of silicon surfaces and interfaces are characterized by charges and gap states whose densities and distributions can be strongly influenced by preparation conditions and technological treatments. A defect model for the Si/Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b4018114cebf18dcfb1ada689eca40
https://doi.org/10.1016/0168-9002(96)00205-7
https://doi.org/10.1016/0168-9002(96)00205-7
Publikováno v:
physica status solidi (b). 194:79-90
Numerical simulations on silicon solar cells with heteroemitter layers made from various wide-gap semiconductors are described and the dependence of the I–V curves on the band offsets is explained. The main advantage utilizing heteroemitters on sil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0facf14cf5d8e0a7c62534cf6f3c8041
https://doi.org/10.1002/pssb.2221940109
https://doi.org/10.1002/pssb.2221940109
Publikováno v:
Microelectronic Engineering. 28:51-54
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4868936bd742b27c4a60d033e3f3c988
https://doi.org/10.1016/0167-9317(95)00014-y
https://doi.org/10.1016/0167-9317(95)00014-y
Autor:
H. Flietner
Publikováno v:
Materials Science Forum. :73-82
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b2fd0415af2608bb30bb3037f3ea0588
https://doi.org/10.4028/www.scientific.net/msf.185-188.73
https://doi.org/10.4028/www.scientific.net/msf.185-188.73
Publikováno v:
Journal of The Electrochemical Society. 141:3595-3599
Measurements of the surface state distribution and of the fixed surface charge of a hydrogen terminated Si(111) surface are reported. The investigations were carried out by the large signal surface photovoltage technique. The electronic properties of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f2c7f9cc4e8f7947df6b13e77ea942
https://doi.org/10.1149/1.2059377
https://doi.org/10.1149/1.2059377
Optical and Photoelectrical Properties of μc-Si Layers and the Influence of Subsequent Hydrogenation
Publikováno v:
Physica Status Solidi (a). 145:401-406
Differently structured LPCVD-Si films are characterized by SEM, SIMS, optical transmission and reflection measurements, and photoconductivity yield measurements. In comparison to crystalline Si the optical absorption is high but the photoconductivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::139c23264d57a41c269808e08a99ffe6
https://doi.org/10.1002/pssa.2211450221
https://doi.org/10.1002/pssa.2211450221
Publikováno v:
Applied Physics A Solids and Surfaces. 59:193-197
The evaluation of the surface state distribution of differently HF-treated Si(111) surfaces during the native-oxide growth in air is investigated by the large-signal field-modulated photovoltage technique. The surface state distribution consisting of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58f7124a9ceff6cfa1410ad29b396b6f
https://doi.org/10.1007/bf00332216
https://doi.org/10.1007/bf00332216
Publikováno v:
Electrochimica Acta. 39:1259-1264
The anodic oxidation of silicon in a 0.04 N solution of potassium nitrate in ethylene glycol with small amounts of water is a hole consuming process. Therefore, n-type silicon, anodically biased, behaves in the dark in many respects as a reverse bias
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc0c762ba0731af7c26e6a46306b90a3
https://doi.org/10.1016/0013-4686(94)e0045-2
https://doi.org/10.1016/0013-4686(94)e0045-2