Zobrazeno 1 - 10
of 40
pro vyhledávání: '"H. Feldermann"'
Publikováno v:
The Journal of Chemical Physics. 119:12547-12552
The present study focuses on the interaction of C60 with the surfaces of highly oriented pyrolitic graphite (HOPG) and sp2-bonded boron nitride (BN). The nanocrystalline BN film was deposited by mass selected ion beams and features an sp2-bonded surf
Publikováno v:
Journal of Applied Physics. 91:4196-4204
Surface Brillouin scattering has been used to determine the elastic properties of thin hard submicron cubic boron nitride (cBN) films grown on silicon by mass selected ion beam deposition. The elastic properties of the films have been determined by f
Autor:
Ulrich Vetter, Michael Büttner, H. Hofsäss, W. Brunner, H. Feldermann, Shuit-Tong Lee, O. Wondratschek, Quan Li, Carsten Ronning, Frederick C. K. Au
Publikováno v:
Journal of Applied Physics. 90:4237-4245
We have studied the growth and the properties of (t)a-C:F films prepared by the deposition of mass separated 12C+ and 19F+ ions as a function of the F concentration. The films are always strongly F deficient due to the formation of volatile F2 and CF
Publikováno v:
Journal of Applied Physics. 90:3248-3254
In this study we investigate the possibility of nucleating nanocrystalline cubic boron nitride (c-BN) thin films directly onto suitable substrates without the soft turbostratic BN (t-BN) interlayer that is usually observed. This would open a path to
Publikováno v:
Journal of Applied Physics. 88:5597-5604
In the present study nanocrystalline c-BN films deposited with a mass selected ion beam were subjected to a hydrogen plasma or atomic hydrogen produced by the hot filament method. Film composition and electronic properties of the surface were subsequ
Autor:
H. Feldermann, U. Geyer, Klaus-Peter Lieb, Fabrizio Roccaforte, H. Hofsäß, S. Habenicht, Wolfgang Bolse
Publikováno v:
Europhysics Letters (EPL). 50:209-215
The ripple topography of ion-beam–eroded surfaces offers a novel method to determine the shape of collision cascades and the distribution of deposited energy. From the energy dependence of the ripple spacing of Ar+- and Xe+-irradiated graphite surf
Publikováno v:
Physical Review B. 58:2207-2215
This paper reviews x-ray photoelectron spectroscopy studies on carbon nitride (CN) and reports on results obtained from CN thin films prepared by mass selected ion-beam deposition. The core-level spectra of samples deposited at room temperature show
Publikováno v:
Applied Physics A: Materials Science & Processing. 66:153-181
/nS of nT rearrangements and nS atoms in the spike volume as the crucial parameter characterizing the ability of a given ion–target combination to achieve complete rearrangement of the spike volume. nT/nS>1 is the optimum condition for diamondlike
Publikováno v:
Diamond and Related Materials. 6:1129-1134
Boron nitride (BN) thin films were grown in UHV by alternating deposition of low energy mass separated 11B+ and 14N+ ions. Depending on the deposition conditions films are disordered (t-BN), hexagonal (h-BN) or cubic (c-BN). These films were annealed
Publikováno v:
Physical Review B. 55:13230-13233
We introduce a phase diagram for boron nitride film growth. It is based on studies of the influence of the ion energy and substrate temperature on the phase formation using mass-selected ion-beam deposition of ${\mathrm{B}}^{+}$ and ${\mathrm{N}}^{+}