Zobrazeno 1 - 10
of 10
pro vyhledávání: '"H. E. Atyia"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
In this study we investigated the material properties of ZnO thin film of ≈ 300 nm thickness, grown on glass and silicon substrates by using atomic layer deposition (ALD) technique. Structural characterization was carried out using incident X-ray d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b566c5926e73c98b3887aeb052926dc0
https://doi.org/10.21203/rs.3.rs-2312523/v1
https://doi.org/10.21203/rs.3.rs-2312523/v1
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Physica Scripta. 97:085816
The present study investigates the linear and non-linear optical characteristics of non-crystalline quaternary Ge15In5Sb5Se75 (GIS-Se) and Ge15In5Sb5Te75 (GIS-Te) chalcogenide thin films. The amorphous nature of the studied compositions was confirmed
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 131:1793-1802
This work aims to research the glass transition kinetics aspects for Se60Ge15As25 and Se60Ge15Sn25 compositions, utilized differential thermal analysis technique under the non-isothermal condition at various heating rates. Glass transition temperatur
Autor:
H. E. Atyia, A. S. Farid
Publikováno v:
Journal of Thermal Analysis and Calorimetry. 128:1793-1800
Study of the glass stability for amorphous Se60Ge15X25 (X = Sn, As) compositions has been performed by determination and evaluation of the widely used and more recently glass stability (GS) criteria. Calorimetric differential thermal analysis (DTA) m
Autor:
H. E. Atyia
Publikováno v:
Journal of Electronic Materials. 46:2130-2139
The effect of various factors such as temperature, film thickness, and Pb content on the electrical conductivity and switching phenomenon in Se90 Te10−x Pb x films has been examined and is discussed herein. X-ray diffraction analysis and energy-dis
Autor:
A. S. Farid, H. E. Atyia
Publikováno v:
Journal of Electronic Materials. 45:357-364
Se85Te10Bi5 films have been deposited using the thermal evaporation technique. Films with different thicknesses in the thickness range 590.2–273.9 nm were annealed at different annealing temperatures above the glass transition temperature for 120 m
Autor:
H. E. Atyia, N.A. Hegab
Publikováno v:
The European Physical Journal Applied Physics. 63:10301
In the present work the optical properties of Ge 15 Se 60 X 25 (X = As or Sn) films have been studied. Optical reflectance and transmittance of films were obtained at normal incident in the wavelength range (500–2500 nm). The transmittance measurem