Zobrazeno 1 - 10
of 30
pro vyhledávání: '"H. Domyo"'
Publikováno v:
IEEE Transactions on Electron Devices. 59:20-25
In this paper, we critically compare two techniques for the parametrization of silicon-on-sapphire MOSFETs' high-frequency small-signal equivalent circuit and discuss the scalability of high-frequency equivalent circuit parameters. We demonstrate tha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38ef6b598fe198189f2d584f9fd52ae1
https://doi.org/10.1109/ted.2011.2170426
https://doi.org/10.1109/ted.2011.2170426
Publikováno v:
IEEE Transactions on Electron Devices. 58:3787-3792
The off-state source-to-drain leakage current and punchthrough voltage are the quantities that frequently limit the performance of short-channel floating-body silicon-on-sapphire (SOS) n-channel MOSFETs. In this paper, we demonstrate that the high-te
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9dd9355f9a9de14f26038f17e32a58b
https://doi.org/10.1109/ted.2011.2168401
https://doi.org/10.1109/ted.2011.2168401
Publikováno v:
Journal of Materials Processing Technology. 194:52-62
This paper studies the effect of anisotropy on the response of an R -plane sapphire wafer to a rapid thermal loading. The finite element method was used to analyse the temperature and stress distribution in the wafer when the environment was heated f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8c03385846adc05b8ef279728b9f37c
https://doi.org/10.1016/j.jmatprotec.2007.03.125
https://doi.org/10.1016/j.jmatprotec.2007.03.125
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 19:449-454
Sapphire wafers can experience temperature variations during processing in a furnace, which in turn can cause large deformation and stresses in the wafers. This paper aims to reveal the mechanism of stress development and evolution in sapphire wafers
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1033e06054702a26f92fa571b5247d30
https://doi.org/10.1109/tsm.2006.883591
https://doi.org/10.1109/tsm.2006.883591
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 19:292-298
Rapid heating and cooling are commonly encountered events in integrated circuit processing, which produce thermal shocks and consequent thermal stresses in wafers. The present paper studies the heat transfer in sapphire wafers during a thermal shock
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ec5d0d6a10e2e5058c80ce832c297668
https://doi.org/10.1109/tsm.2006.879419
https://doi.org/10.1109/tsm.2006.879419
Publikováno v:
Microwave and Optical Technology Letters. 54:2755-2757
This letter compares experimentally the performance of the SOS junctionless MOSFET and the conventional SOS inversion-channel MOSFET, fabricated in a production line technology. It was shown that the former has a significantly higher cutoff frequency
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::861a8233b80a0f1984c654d7ef619b37
https://doi.org/10.1002/mop.27163
https://doi.org/10.1002/mop.27163
Autor:
N. Kistler, Karl Bertling, Aleksandar D. Rakić, M. Stuber, Tran Ho, H. Domyo, G. Imthurn, Yew-Tong Yeow
Publikováno v:
IEEE Electron Device Letters. 29:325-327
The density and the electrical nature of the interface traps at the silicon-sapphire interface of silicon-on-sapphire (SOS) MOSFETs have a significant influence on the electrical characteristics of these transistors. This letter describes a simple MO
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937b74fb0c97379c05918fd1610c705b
https://doi.org/10.1109/led.2008.918263
https://doi.org/10.1109/led.2008.918263
Publikováno v:
COMMAD 2012.
Measurement of small-signal equivalent circuit parameters was carried out to estimate the RF performance of conventional inversion channel and depletion channel SOS MOSFET's. It was shown that the latter has significantly higher cutoff frequency f T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87670a01a81905b9e3447e94a958845a
https://doi.org/10.1109/commad.2012.6472369
https://doi.org/10.1109/commad.2012.6472369
Publikováno v:
Springer Proceedings in Physics ISBN: 9783540319146
(100) silicon thin films grown on (1\( \bar 1 \) 02) sapphire substrates represent the most significant of the silicon-on-insulator technologies and have been used for many years in the production of integrated circuits. This paper presents a TEM stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c49d9a13442340b9175e9230b8c76b6c
https://doi.org/10.1007/3-540-31915-8_78
https://doi.org/10.1007/3-540-31915-8_78
Publikováno v:
1998 IEEE International SOI Conference Proceedings (Cat No.98CH36199).
Summary form only given. Peregrine Semiconductor's UTSi/sup R/ silicon-on-sapphire (SOS) CMOS process is unique because it has a fully insulating substrate. This enables the design of higher performance resistors, capacitors, and inductors. The UTSi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31458378eb06f1e2bac54f8faa3a71db
https://doi.org/10.1109/soi.1998.723130
https://doi.org/10.1109/soi.1998.723130