Zobrazeno 1 - 10
of 44
pro vyhledávání: '"H. Dettmer"'
Publikováno v:
Microelectronics Reliability. 43:1839-1846
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::110237b7f67d77444ef0dde42d0b841a
https://doi.org/10.1016/s0026-2714(03)00313-5
https://doi.org/10.1016/s0026-2714(03)00313-5
Publikováno v:
Supply Chain Management at Warp Speed: Integrating the System from End to End
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8acaf88ed9ae8e37d6bb00fd1b60dee
https://doi.org/10.1201/9781420073362.ch6
https://doi.org/10.1201/9781420073362.ch6
Publikováno v:
Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.
We have fabricated high voltage ( 3.5 kV ) MCT and IGBT devices simultaneously on the same silicon wafer to compare their static and dynamic characteristics. A DMOS technology was adapted to allow for the realization of n-channel ( IGBT ) and p-chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90bc1c4e896579138c4412afc83bb9c
https://doi.org/10.1109/ispsd.1992.991231
https://doi.org/10.1109/ispsd.1992.991231
Autor:
Stefan Müller, Friedhelm Dr. Bauer, Wolfgang Fichtner, H. Dettmer, U. Krumbein, H. Lendenmann, Thomas Stockmeier, K. Lilja
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
Measured and simulated turn-off curves of high-voltage MCTs (MOS-controlled thyristors) and IGBTs (insulated-gate bipolar transistors) are presented. Device simulation results show that the inherently faster-switching IGBT is much more affected by dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b866a6b441485412449c792a9034598e
https://doi.org/10.1109/ispsd.1993.297107
https://doi.org/10.1109/ispsd.1993.297107
Publikováno v:
Scopus-Elsevier
After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c89ae4ca1a2892c1b90997ff2a4a6065
https://doi.org/10.1109/ispsd.1994.583723
https://doi.org/10.1109/ispsd.1994.583723
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
MOS controlled thyristors (MCTs) with 4.5 kV static blocking voltage have been fabricated and characterized. A buffer layer with anode shorts has been adapted to the conventional MCT structure to reach the high blocking voltage together with a low on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1878fc8a526174d701f48953459ccf9f
https://doi.org/10.1109/ispsd.1994.583627
https://doi.org/10.1109/ispsd.1994.583627
Publikováno v:
Proceedings of 1994 IEEE International Electron Devices Meeting.
New MOS controlled thyristor structures, called (Super) Self Aligned MOS Controlled Thyristors, (S)SAMCTs, have been fabricated and characterized. A simplified cathode structure in which all critical layers are self aligned enables the fabrication of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f5cbc7445be3f0e4711a5d476dc05c8
https://doi.org/10.1109/iedm.1994.383384
https://doi.org/10.1109/iedm.1994.383384
Autor:
H. Dettmer, H. Lendenmann, Thomas Stockmeier, B.J. Baliga, Wolfgang Fichtner, Friedhelm Dr. Bauer
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
The dynamic characteristics of large MCT (MOS controlled thyristor) ensembles have been improved by integrating IGBT (insulated-gated bipolar transistor) cells for turn-on and different schemes of cathode and anode shorting for turn-off. Such MCT-IGB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea0c4ec80bd721353d27a81b52edc63
https://doi.org/10.1109/iedm.1991.235479
https://doi.org/10.1109/iedm.1991.235479
Publikováno v:
[1991] Proceedings of the 3rd International Symposium on Power Semiconductor Devices and ICs.
The authors give an overview of the status of CAD (computer-aided design) tools in power IC design, especially the use of simulation tools and computer-aided layout techniques. They illustrate the possibilities of these tools with two examples from a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36a4d7f0473699ee93f9fc8dcddaa700
https://doi.org/10.1109/ispsd.1991.146055
https://doi.org/10.1109/ispsd.1991.146055
Autor:
H. Dettmer, Wolfgang Fichtner
Publikováno v:
Proceedings of International Electron Devices Meeting.
Power integrated circuits and devices are at the heart of many system applications ranging from more or less conventional analog circuits operated at non-standard voltage levels to complex systems composed of parallel arrangements of multi-layer devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59da985f61f8f80d9e8225ae82d74469
https://doi.org/10.1109/iedm.1995.497199
https://doi.org/10.1109/iedm.1995.497199