Zobrazeno 1 - 10
of 733
pro vyhledávání: '"H. Dettmer"'
Autor:
Hutchinson, G. O.
Publikováno v:
The Journal of Roman Studies, 1985 Jan 01. 75, 313-314.
Externí odkaz:
https://www.jstor.org/stable/300714
Autor:
M. Zobel
Publikováno v:
Food / Nahrung. 40:101-101
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d89185d27a5b717ef798145906c168ac
https://doi.org/10.1002/food.19960400220
https://doi.org/10.1002/food.19960400220
Autor:
G. O. Hutchinson
Publikováno v:
Journal of Roman Studies. 75:313-314
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc20335540123822145e6940d6878f5f
https://doi.org/10.2307/300714
https://doi.org/10.2307/300714
Publikováno v:
Microelectronics Reliability. 43:1839-1846
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::110237b7f67d77444ef0dde42d0b841a
https://doi.org/10.1016/s0026-2714(03)00313-5
https://doi.org/10.1016/s0026-2714(03)00313-5
Autor:
Ashar, Fareeaa1 (AUTHOR), Mohammed, Asif Ansari Shaik2 (AUTHOR), Selvamuthukumar, S.1 (AUTHOR) smk1976@gmail.com
Publikováno v:
PLoS ONE. 9/24/2024, Vol. 19 Issue 9, p1-21. 21p.
Publikováno v:
Supply Chain Management at Warp Speed: Integrating the System from End to End
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8acaf88ed9ae8e37d6bb00fd1b60dee
https://doi.org/10.1201/9781420073362.ch6
https://doi.org/10.1201/9781420073362.ch6
Publikováno v:
Proceedings of the 4th International Symposium on Power Semiconductor Devices and Ics.
We have fabricated high voltage ( 3.5 kV ) MCT and IGBT devices simultaneously on the same silicon wafer to compare their static and dynamic characteristics. A DMOS technology was adapted to allow for the realization of n-channel ( IGBT ) and p-chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c90bc1c4e896579138c4412afc83bb9c
https://doi.org/10.1109/ispsd.1992.991231
https://doi.org/10.1109/ispsd.1992.991231
Autor:
Stefan Müller, Friedhelm Dr. Bauer, Wolfgang Fichtner, H. Dettmer, U. Krumbein, H. Lendenmann, Thomas Stockmeier, K. Lilja
Publikováno v:
[1993] Proceedings of the 5th International Symposium on Power Semiconductor Devices and ICs.
Measured and simulated turn-off curves of high-voltage MCTs (MOS-controlled thyristors) and IGBTs (insulated-gate bipolar transistors) are presented. Device simulation results show that the inherently faster-switching IGBT is much more affected by dy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b866a6b441485412449c792a9034598e
https://doi.org/10.1109/ispsd.1993.297107
https://doi.org/10.1109/ispsd.1993.297107
Publikováno v:
Scopus-Elsevier
After a short comparison of the basic characteristics of 20 A, 2 kV MOS controlled thyristors (MCT) and insulated gate bipolar transistors (IGBT), both device concepts are analysed in the same hard switching circuit environment using mixed mode 2D de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c89ae4ca1a2892c1b90997ff2a4a6065
https://doi.org/10.1109/ispsd.1994.583723
https://doi.org/10.1109/ispsd.1994.583723
Publikováno v:
Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
MOS controlled thyristors (MCTs) with 4.5 kV static blocking voltage have been fabricated and characterized. A buffer layer with anode shorts has been adapted to the conventional MCT structure to reach the high blocking voltage together with a low on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1878fc8a526174d701f48953459ccf9f
https://doi.org/10.1109/ispsd.1994.583627
https://doi.org/10.1109/ispsd.1994.583627