Zobrazeno 1 - 10
of 166
pro vyhledávání: '"H. Dansas"'
Autor:
Rami Khazaka, Patrice Gergaud, Mathieu Bertrand, Jérôme Faist, Hans Sigg, Jean-Michel Hartmann, Nicolas Bernier, E. Delamadeleine, Vincent Reboud, Q. M. Thai, H. Dansas, Alexei Chelnokov, Vincent Calvo, Francesco Armand Pilon, Nicolas Pauc, Jérémie Chrétien, Lara Casiez
Publikováno v:
ACS Photonics. 6:2462-2469
Silicon photonics continues to progress tremendously, both in near-infrared datacom/telecoms and in mid-IR optical sensing, despite the fact a monolithically integrated group IV semiconductor laser...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7066a46981b8fa9b9465355356153b19
https://doi.org/10.1021/acsphotonics.9b00712
https://doi.org/10.1021/acsphotonics.9b00712
Autor:
C. Fenouillet-Beranger, L. Brunet, E. Arnoux, V. Lu, V. Beugin, C. Guerin, S.Del Medico, V. Loup, M.-P. Samson, B. Previtali, C. Tabone, N. Rambal, N. Rochat, D. Benoit, F. Allain, G. Romano, T. Artemisia, M. Casse, X. Garros, H. Dansas, A. Grenier, P. Batude, M. Vinet
Publikováno v:
Extended Abstracts of the 2018 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6eb08d5f83aa3104ff40bd2a4fd1cd05
https://doi.org/10.7567/ssdm.2018.b-6-02
https://doi.org/10.7567/ssdm.2018.b-6-02
Autor:
Hervé Boutry, A.M. Papon, H. Dansas, Zdenek Chalupa, V. Lapras, Bernard Previtali, Sylvain Maitrejean, Y. Bogumilowicz, Rami Khazaka
Publikováno v:
Applied Physics Letters
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
Applied Physics Letters, American Institute of Physics, 2018, 112 (24), pp.241602. ⟨10.1063/1.5034205⟩
In this contribution, we report on the growth of horizontal Ge nanowires inside extremely thin tunnels surrounded by oxide. This is achieved through selective lateral growth of Ge on silicon-on-insulator (001) substrates. The 16 nm high tunnels are f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::985451bb6dfb3d1937b66c2574336ac8
https://cea.hal.science/cea-02185226
https://cea.hal.science/cea-02185226
Autor:
Perrine Batude, N. Rambal, Magali Gregoire, Maud Vinet, H. Dansas, Claire Fenouillet-Beranger, Fabrice Nemouchi, L. Pasini, D. Lafond, Laurent Brunet, Xavier Garros, Mikael Casse, M. Mellier, L. Tosti, F. Deprat, Bernard Previtali
Publikováno v:
Solid-State Electronics. 113:2-8
To set up specification for 3D monolithic integration, for the first time, the thermal stability of state-of-the-art FDSOI (Fully Depleted SOI) transistors electrical performance is quantified. Post fabrication annealings are performed on FDSOI trans
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::624836d4fbf40170712d2f7c471a4a45
https://doi.org/10.1016/j.sse.2015.05.005
https://doi.org/10.1016/j.sse.2015.05.005
Autor:
Vincent Delaye, D. Nouguier, Zineb Saghi, N. Rambal, Claire Fenouillet-Beranger, Olivier Rozeau, V. Balan, Philippe Rodriguez, Francois Andrieu, Maud Vinet, S. Beaurepaire, A. Ayres de Sousa, C. Guerin, P. Besombes, Laurent Brunet, Vincent Jousseaume, H. Dansas, M.-P. Samson, F. Proud, Bernard Previtali, D. Ney, R. Famulok, F. Deprat, F. Ibars, Guillaume Rodriguez, Perrine Batude, Xavier Federspiel, Fabrice Nemouchi
Publikováno v:
ESSDERC
For the first time the thermal stability of a new fluorine-free (F-free) W barrier coupled with W interconnections enabling 22% line 1 resistance improvement is evaluated in view of 3D VLSI integration. Integrated with ULK, no resistance nor lateral
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df3e68f61d0b7749abea6fe14cfccf3d
https://doi.org/10.1109/essderc.2017.8066639
https://doi.org/10.1109/essderc.2017.8066639
Autor:
Claude Tabone, Thierry Poiroux, Eric Guiot, H. Dansas, P. Nguyen, Christelle Veytizou, Didier Landru, Francois Andrieu, Bich-Yen Nguyen, Oleg Kononchuk, D. Lafond, L. Tosti, O. Faynot, P. Perreau, M. Casse
Publikováno v:
Solid-State Electronics. 90:39-43
For the first time we performed the CMOS integration on hybrid SOI/Bulk wafers obtained by the local internal dissolution technique of the buried oxide (BOX). We compared the electrical performance of transistors fabricated on hybrid wafers and co-pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b430b84356cb27d68662df2874fcadd6
https://doi.org/10.1016/j.sse.2013.02.054
https://doi.org/10.1016/j.sse.2013.02.054
Autor:
G. Audoit, J.-M. Fabbri, J. Bertheau, H. Dansas, Pierre Bleuet, E. Lay, Yves Dabin, Adeline Grenier, Georg Haberfehlner, B. Florin, P. Gergaud, Julie Villanova, Jean-Paul Barnes, R. Serra, Jérôme Laurencin
Publikováno v:
Microscopy and Microanalysis. 19:726-739
Tomography is a standard and invaluable technique that covers a large range of length scales. It gives access to the inner morphology of specimens and to the three-dimensional (3D) distribution of physical quantities such as elemental composition, cr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ccb72d8dd1cbca7e5ecff77d7c65b960
https://doi.org/10.1017/s1431927613000330
https://doi.org/10.1017/s1431927613000330
Autor:
J.P. Barnes, V. Lapras, P. Acosta Alba, N. Rambal, L. Hortemel, F. Piegas Luce, P. Rivallin, Dominique Lafond, Perrine Batude, Pascal Besson, M.-P. Samson, Sebastien Kerdiles, M. Vinet, B. Mathieu, A. Royer, H. Dansas, R. Kachtouli, M. Casse, Shay Reboh, V. Lu, O. Rozeau, L. Pasini, C.Fenouillet Beranger, Bernard Previtali, Laurent Brunet, F. Aussenac, Benoit Sklenard, F. Deprat
Publikováno v:
Extended Abstracts of the 2015 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::092b52357e8e8fd31b34f1def6a20d04
https://doi.org/10.7567/ssdm.2015.n-1-1
https://doi.org/10.7567/ssdm.2015.n-1-1
Autor:
Frank Fournel, Caroline Rauer, Nicolas Bernier, J.M. Hartmann, H. Dansas, François Rieutord, D. Mariolle, Hubert Moriceau, Anne-Marie Charvet, Névine Rochat, Christophe Morales
Publikováno v:
Microsystem Technologies
Microsystem Technologies, 2015, 21 (5), pp.961-968. ⟨10.1007/s00542-015-2443-5⟩
Microsystem Technologies, Springer Verlag, 2015, 21 (5), pp.961-968. ⟨10.1007/s00542-015-2443-5⟩
Microsystem Technologies, 2015, 21 (5), pp.961-968. ⟨10.1007/s00542-015-2443-5⟩
Microsystem Technologies, Springer Verlag, 2015, 21 (5), pp.961-968. ⟨10.1007/s00542-015-2443-5⟩
International audience; The use of reconstructed silicon wafers obtained after high temperature annealing under H-2 atmosphere was demonstrated as an efficient way for increasing the bonding energy of silicon hydrophobic bonding (Rauer et al. 2013).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9291552964de8d260f646a44ca6c224e
https://hal.science/hal-01616552
https://hal.science/hal-01616552
Autor:
S. Chhun, R. Kachtouli, B. Mathieu, F. Aussenac, X. Garros, M. Casse, M.-P. Samson, A. Laurent, J.P. Barnes, L. Pasini, C. Reita, E. Richard, Claire Fenouillet-Beranger, M. Vinet, E. Petitprez, N. Guillot, Pascal Besson, Bernard Previtali, Fabrice Nemouchi, Perrine Batude, Pierre Perreau, V. Benevent, I. Toque-Tresonne, D. Barge, Laurent Brunet, Karim Huet, Sebastien Kerdiles, G. Druais, F. Deprat, H. Dansas, D. Lafond, V. Lu, N. Rambal
Publikováno v:
2014 IEEE International Electron Devices Meeting.
For the first time the maximum thermal budget of in-situ doped source/drain State Of The Art (SOTA) FDSOI bottom MOSFET transistors is quantified to ensure transistors stability in Sequential 3D (CoolCube™) integration. We highlight no degradation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4900ebd2c14b7ee98c73dbf874dd9c82
https://doi.org/10.1109/iedm.2014.7047121
https://doi.org/10.1109/iedm.2014.7047121