Zobrazeno 1 - 10
of 185
pro vyhledávání: '"H. Dambkes"'
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
This paper describes the development for volume production of a millimeter-wave front-end for a 76.5 GHz Adaptive Cruise Control (ACC) car radar. The ACC radar is based on a Frequency Shift Keying (FSK) concept. The millimeter-wave module is fabricat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df7ee942826d17c09ed5f7245c838195
https://doi.org/10.1109/mwsym.1999.780234
https://doi.org/10.1109/mwsym.1999.780234
Publikováno v:
Technical Digest., International Electron Devices Meeting.
The growth and doping of Si and SiGe layers on Si substrates were investigated by molecular beam epitaxy (Si-MBE). Growth took place at temperatures below the standard Si-MBE process regime ( >
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cae761d246db0800b99d57e0f11e396f
https://doi.org/10.1109/iedm.1988.32876
https://doi.org/10.1109/iedm.1988.32876
Publikováno v:
Technical Digest., International Electron Devices Meeting.
Si/SiGe heterostructure bipolar transistors (HBT) were fabricated and compared to Si homojunction transistors with the same doping levels. Low-temperature Si-MBE was used to form the heterojunction and the homojunction layer sequences. One HBT struct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::daa573b03a39c42b959f75e21522e47f
https://doi.org/10.1109/iedm.1988.32877
https://doi.org/10.1109/iedm.1988.32877
Autor:
H. Dambkes, J. Wenger, N.H.L. Koster, P. Narozny, Ingo Wolff, Stefan Dr. Kosslowski, Franz-Josef Tegude, R.M. Bertenburg
Publikováno v:
GaAs IC Symposium Technical Digest 1992.
Two Ka-band amplifiers in coplanar waveguide (CPW) technology are presented. The four-stage design is based on 0.3- mu m MESFETs, whereas in the three-stage amplifier 0.25- mu m high-electron-mobility transistors (HEMTs) are used. The monolithic micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::851db4b6e8272264f8249cbbc326cb60
https://doi.org/10.1109/gaas.1992.247210
https://doi.org/10.1109/gaas.1992.247210
Publikováno v:
Semiconductor Science and Technology. 9:659-661
We have measured the hot-electron luminescence of GaAs HEMT devices over a broad spectral range in the infrared (0.4-1.4 eV). The emission intensity has spectral features suggesting that k-conserving, interconduction-band transitions dominate the emi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b350a1c5b44f0d1949e936cd72c93f
https://doi.org/10.1088/0268-1242/9/5s/069
https://doi.org/10.1088/0268-1242/9/5s/069
Autor:
H. Dambkes, Harald Künzel, K. H. Ploog, W. Schlapp, J. Bottcher, R. Lösch, H. Nickel, Y. H. Zhang, Jurgen Dickmann
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
A method of growing AlInAs/GaInAs HFETs on InP substrates that combines the low resistance of the doped surface with high breakdown the surface depletion by using a very highly doped cap layer that is just depleted by the surface potential is present
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0541bf8cf73fe87008d449086865e52c
https://doi.org/10.1109/iciprm.1991.147356
https://doi.org/10.1109/iciprm.1991.147356
Publikováno v:
IEEE NTC,Conference Proceedings Microwave Systems Conference.
A number of civil applications such as motion sensors and communications systems are planned to use the Ka-band frequency range. An MMIC chip set for the realization of the millimeter-wave front-end has been developed. The key MMIC circuit functions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::115dba64c390adeef848a1c3c62401cc
https://doi.org/10.1109/ntcmws.1995.522853
https://doi.org/10.1109/ntcmws.1995.522853
Publikováno v:
Semiconductor Science and Technology. 7:B564-B566
The authors measure the spectrum of radiative emission from a high quality HEMT device and relate this to the energy distribution of the channel electrons. The discussion focuses on the intraband and interband contributions to the spectrum. The intra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bef1543fd0a6fc70b7cf94f9bbf79b9b
https://doi.org/10.1088/0268-1242/7/3b/148
https://doi.org/10.1088/0268-1242/7/3b/148
Publikováno v:
IEEE Microwave and Guided Wave Letters. 2:46-48
Quarter-micron InGaAs-GaAs dual-gate HEMTs connected as a cascode MMIC in a compact manner have been fabricated and investigated. The devices show a high output impedance and a very low feedback capacitance, resulting in a high-voltage gain factor /s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0f93b909360f57a8b8c0566bc0650d4
https://doi.org/10.1109/75.122405
https://doi.org/10.1109/75.122405
Autor:
B.E. Maile, S. Kosslowski, P. Narozny, Ingo Wolff, A. Schurr, H. Haspeklo, C. Wolk, H. Dambkes, Jurgen Dickmann, A. Geyer
Publikováno v:
1993 23rd European Microwave Conference.
This paper demonstrates a comparison of two three-stage Ka-Band amplifiers in CPW-technique. The first MMIC is based on AlGaAs/GaAs HEMT devices with a gate length of 0.25?m. The second MMIC is realized with 0.25?m InAlAs/InGaAs HEMT devices on InP.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dead079b968ad7a45aab9abe3ff6d76
https://doi.org/10.1109/euma.1993.336824
https://doi.org/10.1109/euma.1993.336824