Zobrazeno 1 - 8
of 8
pro vyhledávání: '"H. D. Cheung"'
Publikováno v:
Building and Environment. 81:51-59
A questionnaire survey was conducted to investigate the effects of daylighting and human behavior patterns on subjective luminous comfort in Hong Kong housing units. The participants were recruited via mail, and included residents of both public and
Publikováno v:
Building and Environment. 72:368-376
This paper investigates the influence of clerestory window structures on the performance of daylighting lightshelves in terms of the interior illuminance level and uniformity distribution using the software TracePro7.0. Simulations were carried out f
Autor:
H. D. Cheung, T.M. Chung
Publikováno v:
Building and Environment. 43:2101-2111
This paper reports a study of the subjective preference to daylit indoor environment of a residential room using conjoint analysis, which is a highly reputable method used to analyze the mutual relationships among different attributes. Seven influent
Autor:
H. D. Cheung, T.M. Chung
Publikováno v:
Building and Environment. 42:3138-3148
A method of predicting the sunlight duration on windows in a densely packed building environment is presented. This method is based on dividing the hemispherical sky into small patches of 5°×5° and determining (using long-term climatic data) the p
Autor:
TM Chung, H. D. Cheung
Publikováno v:
Architectural Science Review. 48:81-91
Daylighting supports human activities with energy savings and provides positive effects to human health. In a dense urban environment, ensuring adequate daylight incident on windows is of the utmost importance in the design of building form and layou
Autor:
Richard Arès, C. A. Tran, G. Soerensen, H. D. Cheung, M. L. W. Thewalt, Simon P. Watkins, Y. Lacroix
Publikováno v:
Journal of Electronic Materials. 24:1583-1590
The growth of high purity InAs by metalorganic chemical vapor deposition is reported using tertiarybutylarsine and trimethylindiμm. Specular surfaces were obtained for bulk 5-10 μm thick InAs growth on GaAs substrates over a wide range of growth co
Publikováno v:
Applied Physics Letters. 68:1960-1962
Temperature dependent Hall measurements were used to investigate the role of unintentional interfacial dopant layers on the electrical properties of high purity InP. Secondary ion mass spectroscopy was used to measure the level of Si contamination pr
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