Zobrazeno 1 - 10 of 92 pro vyhledávání: '"H. Closs"'
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Akademický článek
Uber Erfahrungen mit Sprengungen zur Untersuchung der hòheren Teile der Erdkruste in Deutschland
Autor: h. Closs
Publikováno v: Annals of Geophysics, Vol 12, Iss 3, Pp 257-271 (1959)
Si passano brevemente in rassegna i recenti lavori condotti nella GermaniaOccidentale, lo scopo dei quali era la determinazione, mediante rilevazionisismiche a rifrazione o a riflessione, della discontuinità fra stratisedimentari e basamento, della
Externí odkaz: https://doaj.org/article/36f45673c93a441cb163ccddec7e548b
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2
IV–VI Compound heterostructures grown by molecular beam epitaxy
Autor: H. Closs, I. N. Bandeira, A. Y. Ueta, Sukarno Olavo Ferreira, P. Motisuke, Eduardo Abramof, C. Boschetti, Paulo H. O. Rappl
Publikováno v: Microelectronics Journal. 33:331-335
Structural and optical characterization of some IV–VI superlattices (SL) and multi-quantum wells (MQW) grown by molecular beam epitaxy (MBE) on BaF 2 (111) substrates are shown. Three different types of systems were investigated, namely, PbTe/PbSnT
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb51e95e1e59c04a94d945c97f608a37
https://doi.org/10.1016/s0026-2692(01)00127-6
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3
Molecular beam epitaxial growth of PbTe and PbSnTe on Si(100) substrates for heterojunction infrared detectors
Autor: C. Boschetti, I. N. Bandeira, Eduardo Abramof, P. Motisuke, Paulo H. O. Rappl, H. Closs, A. Y. Ueta
Publikováno v: Infrared Physics & Technology. 42:91-99
We have investigated the molecular beam epitaxial (MBE) growth of the IV–VI compounds PbTe and PbSnTe directly on Si(1 0 0) substrates, by in situ reflection high energy electron diffraction characterization. PbTe/Si(1 0 0) heterostructures were pr
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::79184e3f370788b6da2926ab82a08e8e
https://doi.org/10.1016/s1350-4495(01)00061-5
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4
Band crossing evidence in PbSnTe observed by optical transmission measurements
Autor: A. Y. Ueta, P. Motisuke, Paulo H. O. Rappl, H. Closs, I. N. Bandeira, Sukarno Olavo Ferreira, C. Boschetti, Eduardo Abramof
Publikováno v: Brazilian Journal of Physics, Volume: 29, Issue: 4, Pages: 771-774, Published: DEC 1999
Brazilian Journal of Physics v.29 n.4 1999
Brazilian Journal of Physics
Sociedade Brasileira de Física (SBF)
instacron:SBF
Using high quality epitaxial layers, we have obtained direct evidence of the band inversion in the Pb1-xSn xTe system .The samples, covering the whole composition range, were grown by molecular beam epitaxy on (111)BaF2 substrates. A minimumin the re
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6cd9774db2dae4165ac4b00c54bdaa2b
https://doi.org/10.1590/s0103-97331999000400033
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5
Reciprocal space maps of PbTe/SnTe superlattices
Autor: H. Closs, Sukarno Olavo Ferreira, A. Y. Ueta, I. N. Bandeira, Eduardo Abramof, Paulo H. O. Rappl, C. Boschetti, P. Motisuke
Publikováno v: Journal of Applied Physics. 84:3650-3653
PbTe/SnTe superlattices were grown on (111) BaF2 substrates by molecular beam epitaxy using PbTe as buffer layers. The individual layer thickness and number of repetitions were chosen in order to change the strain profile in the superlattices from co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8c410d529cf43ada9086d7b40e96f3cf
https://doi.org/10.1063/1.368540
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6
Molecular beam epitaxial growth of high quality Pb1−xSnxTe layers with 0⩽x⩽1
Autor: Sukarno Olavo Ferreira, I. N. Bandeira, C. Boschetti, A. Y. Ueta, Eduardo Abramof, P. Motisuke, Paulo H. O. Rappl, H. Closs
Publikováno v: Journal of Crystal Growth. 191:466-471
Lead tin telluride epitaxial layers with tin concentrations covering the whole compositional range have been grown by molecular beam epitaxy on cleaved BaF 2 (1 1 1) substrates, using PbTe and SnTe solid sources. The full width at half maximum of the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d25ab80f7c07923959232850c34f31d7
https://doi.org/10.1016/s0022-0248(98)00135-3
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7
Electrical properties of Pb1-xSnxTe layers with 0⩽x⩽1 grown by molecular beam epitaxy
Autor: Paulo H. O. Rappl, H. Closs, Eduardo Abramof, Sukarno Olavo Ferreira, I. N. Bandeira
Publikováno v: Journal of Applied Physics. 82:2405-2410
In this work, the electrical properties of Pb1−xSnxTe epitaxial layers with Sn composition covering the whole range were investigated. The samples were grown on (111)BaF2 substrates in a molecular beam epitaxy system using PbTe, SnTe, and Te solid
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7aebad852aca13c877635c1d33108411
https://doi.org/10.1063/1.366051
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10
MBE growth and characterization of Sn1-xEu xTe
Autor: Valmir Antonio Chitta, P. Motisuke, H. Closs, Gerrit E. W. Bauer, Nei F. Oliveira, Paulo H. O. Rappl, A. Y. Ueta, Eduardo Abramof, Jose A. H. Coaquira, V. R. dos Anjos
Publikováno v: Brazilian Journal of Physics. 34:672-674
Epilayers of Sn1-xEuxTe (0 < x < 0:03) were grown by molecular beam epitaxy on freshly cleaved BaF2(111) substrates and their structural, electrical and optical properties were investigated. The thicknesses of epilayers were about 1.5 mm and depositi
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::62fb259aabbb8e7d12d188aa7bb4d641
https://doi.org/10.1590/s0103-97332004000400039
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