Zobrazeno 1 - 10
of 17
pro vyhledávání: '"H. Charifi"'
Autor:
R. Moustabchir, H. Charifi
Publikováno v:
Materials Today: Proceedings. 27:3071-3081
Weather forecasting is a very challenging task due to dynamical and nonlinear structures associated to the atmosphere. In fact, the atmosphere is described as a chaotic system; this means that small changes at a point in time can lead to large change
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::373ffc5bae7929090cb05035884d6408
https://doi.org/10.1016/j.matpr.2020.03.564
https://doi.org/10.1016/j.matpr.2020.03.564
Autor:
Abdellatif Elanique, H. Charifi, Abdelhakim Nafidi, Abderrazak Boutramine, Driss Barkissy, M. Massaq
Publikováno v:
Journal of Low Temperature Physics. 182:185-191
We report here the electronic band structures of symmetric type I GaAs ( $$d_{1}= 2.83$$ nm)/AlAs ( $$d_{2}= 2.83$$ nm) superlattice as a function of the well thickness $$d_{1}$$ and the effect of the valence band offset $$\Lambda $$ , the ratio $$d_
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ceb87b7b3184a1ddf9130821487acac
https://doi.org/10.1007/s10909-015-1437-0
https://doi.org/10.1007/s10909-015-1437-0
Publikováno v:
World Journal of Condensed Matter Physics. :7-16
Amorphous hydrogenated silicon nitride thin films a-SiNx:H (abbreviated later by SiNx) were deposited by Electron Cyclotron Resonance plasma enhanced chemical vapor deposition method (ECR-PECVD). By changing ratio of gas flow (R = NH3/SiH4) in the re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e7bf97a415de40155900925ae1ba5f1b
https://doi.org/10.4236/wjcmp.2016.61002
https://doi.org/10.4236/wjcmp.2016.61002
Autor:
Ali Khalal, Es-Said El-Frikhe, H. Charifi, Ahmed Tirbiyine, Thami Ait Taleb, Abdelhakim Nafidi, Hassan Chaib
Publikováno v:
Optical and Quantum Electronics. 46:179-192
The electrical and linear electro-optical properties of BaTiO $$_{3}$$ (BT)/SrTiO $$_{3}$$ (ST) superlattices epitaxially grown on ST substrate are theoretically investigated using a microscopic quantum mechanical model based on the orbital approxima
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d17cb00926fcd42063d99bc92168f0f
https://doi.org/10.1007/s11082-013-9738-5
https://doi.org/10.1007/s11082-013-9738-5
Autor:
Hassan Chaib, Abdellatif Elanique, Abdelhakim Nafidi, Es-Said El-Frikhe, Driss Barkissy, Abderrazak Boutramine, H. Charifi
Publikováno v:
Applied Physics A. 122
We have investigated the band structure E(d = d 1 + d 2), E(k z) and E(k p), respectively, as a function of the SL period, d, in the growth direction and in plan of InAs(d 1 = 160 A)/GaSb(d 2 = 105 A) type II superlattice, performed in the envelope f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5f5115dcfb90a17cf354f06ca477fa6
https://doi.org/10.1007/s00339-015-9561-x
https://doi.org/10.1007/s00339-015-9561-x
Publikováno v:
Materials Science and Engineering: B. :242-247
Surface passivation of bare silicon or emitter region is of great importance towards high efficiency solar cells. Nowadays, this is usually accomplished by depositing an hydrogenated amorphous silicon nitride (a-SiNx:H) layer on n + p structures that
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::306640d4adfef8f544c518c3e42857ba
https://doi.org/10.1016/j.mseb.2009.02.009
https://doi.org/10.1016/j.mseb.2009.02.009
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2006, 89, pp.211914_1-3
Applied Physics Letters, American Institute of Physics, 2006, 89, pp.211914_1-3
Hydrogen is released from hydrogenated silicon nitride (SiNx:H) during thermal treatments. The formation of molecular hydrogen (H2) in SiNx:H layers with low mass density is confirmed by Raman spectroscopy. However, no H2 is observed in layers with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f1c5d5567bd191696baaf627af75f99
https://hal.archives-ouvertes.fr/hal-00131714
https://hal.archives-ouvertes.fr/hal-00131714
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.