Zobrazeno 1 - 10
of 29
pro vyhledávání: '"H. C. Card"'
Publikováno v:
Journal of Electronic Testing. 6:325-330
To facilitate test vector generation for high-speed circuits, we present the design and circuit simulation of parallel pseudorandom number generators in GaAs technology. These PRNGs are based on hybrid cellular automata (CA) in which mixtures of loca
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a36ecc8213c2a93fad14788aa4089ef
https://doi.org/10.1007/bf00996440
https://doi.org/10.1007/bf00996440
Autor:
H. C. Card, E. Y. Chan
Publikováno v:
Applied optics. 19(8)
A theoretical and experimental study of the zero-bias quantum efficiency eta(0) for metal (Au, Cu, Ag)-Ge Schottky barrier photodetectors in the near IR range (1.1 microm < lambda < 1.8 microm) has been performed. By an interactive computer programmi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4fbf4009bac76757646b3934318e8daa
https://pubmed.ncbi.nlm.nih.gov/20221033
https://pubmed.ncbi.nlm.nih.gov/20221033
Autor:
H. C. Card, W. R. Moore
Publikováno v:
Neural Networks. 3:333-346
Relatively simple invertebrate animals exhibit an impressive variety of learning and memory behaviour including such associative learning tasks as classical or Pavlovian conditioning. The cellular machinery responsible for this behaviour is beginning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c1489a62adfee3eeaddbeb05c52e8a9
https://doi.org/10.1016/0893-6080(90)90076-w
https://doi.org/10.1016/0893-6080(90)90076-w
Publikováno v:
2004 10th International Symposium on Antenna Technology and Applied Electromagnetics and URSI Conference.
A frequency agile microstrip patch antenna is presented. A micromachined membrane is used as the ground plane below the antenna patch. Actuation of this membrane away from the patch introduces an air gap between the substrate and the ground plane. Co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47ee464712bd077d2f1b6cad52b0810d
https://doi.org/10.1109/antem.2004.7860575
https://doi.org/10.1109/antem.2004.7860575
Publikováno v:
Canadian Journal of Physics. 61:305-308
Hydrogenated amorphous-silicon thin films (a-Si:H) were deposited by microwave plasma chemical-vapour decomposition of SiH4, on thin polyethylene sheets. The high-resolution, far infrared measurements were performed on these films in the 700–50 cm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7370e1ded59dbf524e407d05d78dfb4
https://doi.org/10.1139/p83-041
https://doi.org/10.1139/p83-041
Autor:
H. C. Card
Publikováno v:
Journal of Applied Physics. 50:2822-2825
A theory of the electronic transport properties of contacts between two dissimilar semiconductors is presented, which includes the effects of bias‐dependent interface state charge on the electrostatic potential distribution in the contact. The quas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f168ab1e7b75bd11891de4a087a94357
https://doi.org/10.1063/1.326194
https://doi.org/10.1063/1.326194
Autor:
T. C. Poon, H. C. Card
Publikováno v:
Journal of Applied Physics. 51:6273-6278
By means of a recently developed experimental technique, the dependence on the energy and electric field of Si‐SiO2 interface state capture cross sections has been measured for Al‐SiO2‐nSi structures with an oxide thickness ?800 A. The capture
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa4d0625de51d532bdad513306759b87
https://doi.org/10.1063/1.327614
https://doi.org/10.1063/1.327614
Publikováno v:
Physical Review B. 21:670-678
The Hall coefficients have been measured in ${\mathrm{Al}}_{x}{\mathrm{Ga}}_{1\ensuremath{-}x}\mathrm{As}$ as a function of hydrostatic pressure, temperature, and the compositional parameter $x$, and are shown to consist of two contributions. These r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520c0b83a70465403c1fd32542d0eee5
https://doi.org/10.1103/physrevb.21.670
https://doi.org/10.1103/physrevb.21.670
Autor:
Y. K. Hsieh, H. C. Card
Publikováno v:
Journal of Applied Physics. 65:2409-2415
Restrictions on the standard Shockley–Read–Hall (SRH) model in the recombination processes due to direct photoionization of the trapping centers have been theoretically studied. We find that, for photon energies even slightly in excess of the ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::729b114f800f5bc68a2cdd61434d72f5
https://doi.org/10.1063/1.342810
https://doi.org/10.1063/1.342810
Publikováno v:
Journal of Physics D: Applied Physics. 16:1801-1811
Optical constants of amorphous hydrogenated Si1-xGex(H) films fabricated by radio frequency sputtering have been measured for 0
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::15c78d01f808fc53a8490ae725848314
https://doi.org/10.1088/0022-3727/16/9/027
https://doi.org/10.1088/0022-3727/16/9/027