Zobrazeno 1 - 10
of 60
pro vyhledávání: '"H. Bleichner"'
Publikováno v:
Materials Science Forum. :1259-1264
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::967bad37db569c412384ec5619102866
https://doi.org/10.4028/www.scientific.net/msf.389-393.1259
https://doi.org/10.4028/www.scientific.net/msf.389-393.1259
Publikováno v:
Journal of Applied Physics. 90:980-984
An optical emission microscopy technique with spatial and spectral resolution capabilities is applied for stability studies of 4H–SiC material properties. From the example of a 4H–SiC p+/n−/n+ diode imaged at different stages of electrical over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74907b9e224b55cb35ec2ac1cb758c2b
https://doi.org/10.1063/1.1380221
https://doi.org/10.1063/1.1380221
Autor:
Lars Hultman, Bengt Gunnar Svensson, Per Persson, Uwe Zimmermann, Margareta K. Linnarsson, Susanne Karlsson, Martin S. Janson, Rositza Yakimova, H. Bleichner, H. Andersson
Publikováno v:
Scopus-Elsevier
Epitaxially grown 4H-SiC structures with several heavily Al doped layers were used. The samples were annealed in Ar atmosphere in a RF-heated furnace between 1500 and 2900 degreesC for 0.5 to 3h. S ...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5cc88eeb81f353fcd684cad348d6609
https://doi.org/10.4028/www.scientific.net/msf.353-356.583
https://doi.org/10.4028/www.scientific.net/msf.353-356.583
Publikováno v:
Materials Science Forum. :389-392
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5558895e442f4d9723f757f9b618aa96
https://doi.org/10.4028/www.scientific.net/msf.353-356.389
https://doi.org/10.4028/www.scientific.net/msf.353-356.389
Publikováno v:
Journal of Applied Physics. 81:3522-3525
Results of carrier lifetime studies in low-doped epitaxial 4H SiC layers are reported. The free carrier absorption (FCA) technique was applied to extract carrier lifetime parameters and their spatial distribution in a wide photoexcitation range. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b531341bf2192630aadb136fe5747f77
https://doi.org/10.1063/1.365050
https://doi.org/10.1063/1.365050
Publikováno v:
Journal of Applied Physics. 81:2256-2262
From free-carrier absorption measurements of spatially and temporally resolved excess carrier concentrations in the n-base of electron irradiated, low doped, highly injected p-i-n type diodes, the effective ambipolar lifetime has been extracted with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07bc1056c64dc14e06f9f3fa4f4967d5
https://doi.org/10.1063/1.364277
https://doi.org/10.1063/1.364277
Publikováno v:
Journal of Applied Physics. 79:9142-9148
The Shockley–Read–Hall (SRH) carrier lifetime in electron-irradiated low-doped p-type silicon was measured at different injection levels and various temperatures. The lifetime under high-level injection was determined using the open-circuit carri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70da49add4d36cb5f6888e976c3c8339
https://doi.org/10.1063/1.362585
https://doi.org/10.1063/1.362585
Publikováno v:
IEEE Transactions on Electron Devices. 42:178-187
The influence of the anode shorting on the turn-off failure of GTO thyristors is investigated. Two types of shorting patterns, viz., "finger"and "ring"-type anode designs, are compared with a non-shorted design. The inductively loaded GTO unit cells
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::082adf7a4fda619389ed7e14f990420f
https://doi.org/10.1109/16.370019
https://doi.org/10.1109/16.370019
Publikováno v:
IEEE Transactions on Power Electronics. 9:514-521
Anode-shorted GTO thyristor samples were investigated by means of the free-carrier absorption (FCA) technique. Both the turn-on and turn-off processes were investigated as regards the two-dimensional carrier distribution for different stages of the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1a8d5e50d34363ab7beb8a45e619c4c
https://doi.org/10.1109/63.321037
https://doi.org/10.1109/63.321037
Publikováno v:
Journal of Applied Physics. 76:2855-2859
Recent articles have been published claiming that the ambipolar diffusion coefficient of semiconductors, Da, is basically independent of the excess‐carrier concentration, thus contradicting the conventional result of, for example, Fletcher. However
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44e52985f76da28709c9a40b88d7a843
https://doi.org/10.1063/1.358504
https://doi.org/10.1063/1.358504