Výsledky vyhledávání - "H. Besaucele"

Laser Thermal Annealing: A low thermal budget solution for advanced structures and new materials

Autor: H. Besaucele, I. Toque-Tresonne, Fulvio Mazzamuto, T. Emeraud, Karim Huet

Publikováno v: 2014 International Workshop on Junction Technology (IWJT).

With the growing demand for improved performance, increased storage capacity and more functionality, the industry is facing challenges which require disruptive solutions. With the introduction of 3D geometries (e.g. FinFET) and of active layer stacki

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c70c41362f9a0c56e63df5888da361db
https://doi.org/10.1109/iwjt.2014.6842020

Zobrazit plný text záznamu

Lasers à excimères de forte puissance moyenne à grande cadence

Autor: H. Brunet, B. Vincent, C. Gagnol, H. Besaucele, B. Lacour

Publikováno v: Annales de Physique. 19:C1-205

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0fc3464c3acc9b8390563906d763ae8e
https://doi.org/10.1051/anphys/1994051

Zobrazit plný text záznamu

Experimental and theoretical analysis of dopant activation in double implanted silicon by pulsed laser thermal annealing

Autor: H. Besaucele, C. Boniface, G. Fisicaro, N. Variam, F. Desse, Karim Huet, J. Venturing, Y. Erokhin, A. La Magna, M. Schuhmacher, V. Privitera

Publikováno v: 2009 17th International Conference on Advanced Thermal Processing of Semiconductors.

Single pulse Deep Melt Activation High activation of both B (anode) and P (buffer) Over 1.2 μm melt depth possible EOR defect annealing Layers electrical properties preserved Process faster than dopantdiffusion Limited dopantintermixing High tempera

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0244f45325a50b28bbee254f16ec9d76
https://doi.org/10.1109/rtp.2009.5373482

Zobrazit plný text záznamu

Defect kinetics and dopant activation in submicrosecond laser thermal processes

Autor: J. Venturini, Karim Huet, H. Besaucele, A. La Magna, Giuseppe Fisicaro

Publikováno v: Applied physics letters 95 (2009): 231901-1–231901-3. doi:10.1063/1.3268472
info:cnr-pdr/source/autori:K. Huet; G. Fisicaro; J. Venturini; H. Besaucèle; A. La Magna/titolo:Defect kinetics and dopant activation in submicrosecond laser thermal processes/doi:10.1063%2F1.3268472/rivista:Applied physics letters/anno:2009/pagina_da:231901-1/pagina_a:231901-3/intervallo_pagine:231901-1–231901-3/volume:95

Defect evolution in ion implanted c-Si at the submicrosecond time scales during a laser thermal annealing process is investigated by means of kinetic simulations. Nonmelting, melting, and partial melting regimes are simulated. Our modeling considers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2380de076aba689734d41212d2380e14
https://publications.cnr.it/doc/36511

Zobrazit plný text záznamu

Vyhledávací nástroje:

Upřesnit hledání