Zobrazeno 1 - 10
of 328
pro vyhledávání: '"H. Beneking"'
Autor:
H. Beneking
Publikováno v:
IEEE Transactions on Electron Devices. 43:1416-1427
The functional behavior of the collector part of an amplifying three terminal electronic device is reviewed, relevant for transport and collection of carriers. The important properties are analyzed, with emphasis on III-V materials. The resulting dem
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34ac36063079009f201244a1014426f3
https://doi.org/10.1109/16.535327
https://doi.org/10.1109/16.535327
Autor:
H. Beneking
Publikováno v:
Materials Science and Engineering: B. 20:41-47
The quality of III–V electronic and optoelectronic devices suffers from the unsatisfying properties of the single-crystal ingots available. This influences the device quality and uniformity of the electric data and limits the integration density as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a3e525438b5812eec2e645a8c258117
https://doi.org/10.1016/0921-5107(93)90393-2
https://doi.org/10.1016/0921-5107(93)90393-2
Publikováno v:
Microelectronic Engineering. 17:287-290
As a new high resolution electron beam resist, homogeneous and fine-crystalline lithium fluoride films were fabricated. For this purpose, a special evaporation process was developed. The advantage of lithium fluoride is the relatively low critical ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::081c64abadc219ecc428a245d9115829
https://doi.org/10.1016/0167-9317(92)90058-y
https://doi.org/10.1016/0167-9317(92)90058-y
Publikováno v:
Journal of Crystal Growth. 110:985-988
The influence of oxygen contamination on Si low pressure vapour phase epitaxy (LPVPE) at 800°C in the SiCl2H2−H2 system has been investigated. O2 was added intentionally with partial pressures between 10−8 and 2×10−4 mbar. The quality of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee8fdd99ff7ae9f9d7a358119a1ef3cd
https://doi.org/10.1016/0022-0248(91)90661-n
https://doi.org/10.1016/0022-0248(91)90661-n
Publikováno v:
IEEE Transactions on Electron Devices. 38:1878-1882
The fabrication of overgrown silicon permeable-base transistors (PBTs) is described starting from MBE-grown epitaxial Si/CoSi/sub 2//Si heterostructures. Gate fingers are patterned by Ar sputtering followed by low-pressure vapour phase epitaxial over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28b04abbd4d3cf6b9b1482dc3e650ff4
https://doi.org/10.1109/16.119028
https://doi.org/10.1109/16.119028
Autor:
H. Beneking
Publikováno v:
Festkörperprobleme 16 ISBN: 9783528080228
The formation of III–V-and related compounds and their optical and electrical behaviour are dependent on their position in the Periodic System of the elements.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a42224b978c26f41d75830b164aa527
https://doi.org/10.1007/bfb0107744
https://doi.org/10.1007/bfb0107744
Autor:
W. Filensky, H. Beneking
Publikováno v:
MTT-S International Microwave Symposium Digest.
Using GaAs-MESFETs under switching conditions, the regeneration and amplification of fast pulses in the 50ps range is performed. Sharpening factors t/sub y in/ / t /sub y out/ of 3 and voltage amplification factors of 2 at 50 ohm are reached for outp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fe07f181173ec22e1dcba8b33a94891
https://doi.org/10.1109/mwsym.1976.1123679
https://doi.org/10.1109/mwsym.1976.1123679
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
GaInAs MISFETs with pyrolytic SiO/sub 2/ isolator on n- and p-GaInAs have been investigated with regard to analog and digital performance. The 1.7- mu m gate length MISFETs on n-GaInAs and p-GaInAs have transconductances of 100 mS/mm and 40 mS/mm, cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b61a0cc96277a97f935e6bf208e9953
https://doi.org/10.1109/iciprm.1992.235641
https://doi.org/10.1109/iciprm.1992.235641
Autor:
H. Beneking, W. Langheinrich
Publikováno v:
AIP Conference Proceedings.
The capability of lithium fluoride based films as a self‐developing resist for ultra‐high resolution electron beam lithography is demonstrated. The advantage of lithium fluoride is the relatively low critical exposure dose, compared to other meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bea072c6585cd90502636ac8966ab1b7
https://doi.org/10.1063/1.42674
https://doi.org/10.1063/1.42674