Zobrazeno 1 - 10
of 97
pro vyhledávání: '"H. Baumgärtner"'
Autor:
Tom Nilges, Lavinia M. Scherf, Franziska Baumer, Max H. Baumgärtner, Katharina M. Freitag, Lukas Heletta, Claudia Ott, Richard Weihrich, Rainer Pöttgen, Konrad Schäfer
Publikováno v:
Zeitschrift für anorganische und allgemeine Chemie. 645:340-346
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f59152ba51f310e9b494445eccd0b0e
https://doi.org/10.1002/zaac.201800237
https://doi.org/10.1002/zaac.201800237
Autor:
Max H. Baumgärtner, Thomas Sattelmayer
Publikováno v:
Volume 4A: Combustion, Fuels and Emissions.
The increasing amount of volatile renewable energy sources drives the necessity of flexible conventional power plants to compensate for fluctuations of the power supply. Gas turbines in a combined cycle power plant (CCPP) adjust the power output quic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::212a72fa8e2e389c10f84080983e3094
https://doi.org/10.1115/gt2017-64013
https://doi.org/10.1115/gt2017-64013
Publikováno v:
Advanced Engineering Materials. 11:278-284
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5d98b8212763092deadd872e1302ac6
https://doi.org/10.1002/adem.200800293
https://doi.org/10.1002/adem.200800293
Publikováno v:
Materials Science Forum. :77-117
An overview of various cleaning procedures for silicon surfaces is presented. Because in-situ cleaning becomes more and more important for nanotechnology the paper concentrates on physical and dry chemical techniques. As standard ex-situ wet chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f2b3fbca6d5481b6b3112ea60ee951b
https://doi.org/10.4028/www.scientific.net/msf.573-574.77
https://doi.org/10.4028/www.scientific.net/msf.573-574.77
Publikováno v:
Surface Science. 602:493-498
Scanning tunneling microscopy has been used to investigate silicon overgrowth of C 60 on the Si(1 0 0)-2 × 1 surface. It can be shown that crystal morphology and quality is highly dependent on temperature and C 60 coverage. A C 60 coverage of 0.02 M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7384df9dec312c8c3e02aaa6da94ae9f
https://doi.org/10.1016/j.susc.2007.10.043
https://doi.org/10.1016/j.susc.2007.10.043
Autor:
Oliver Senftleben, A. Aßmuth, T. Sulima, A. Bayerstadler, Ignaz Eisele, Tanja Stimpel-Lindner, H. Baumgärtner
Publikováno v:
Applied Surface Science. 253:8389-8393
The cleaning of silicon (Si) surfaces is a very important issue for the fabrication of novel semiconductor devices on the nanoscale. Established methods for the removal of organic impurities and the native or chemical oxide are often combined with hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e11b9c168bc9f4293e54bb48ed5c45f5
https://doi.org/10.1016/j.apsusc.2007.04.005
https://doi.org/10.1016/j.apsusc.2007.04.005
Publikováno v:
Applied Surface Science. 243:401-408
Silicon-rich nitride, deposited by LPCVD, is a low stress amorphous material with a high refractive index. After deposition the silicon-rich nitride thin film is annealed at temperatures above 1100 °C to break N H bonds, which have absorption peaks
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::841d78d7e0b9af77ff75952cbb9bb916
https://doi.org/10.1016/j.apsusc.2004.09.096
https://doi.org/10.1016/j.apsusc.2004.09.096
Publikováno v:
Materials Science and Engineering: B. 89:394-398
In this study, the growth of fullerene C 60 on Si(1 1 1) surfaces was investigated. Due to the high density of dangling bonds on the Si(1 1 1)–7×7 surface and the resulting low-surface mobility of C 60 , neither the growth of monocrystalline layer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18d0ca72c431cc87b5b8dc9ec07719c6
https://doi.org/10.1016/s0921-5107(01)00841-8
https://doi.org/10.1016/s0921-5107(01)00841-8
Autor:
Thomas Sattelmayer, Max H. Baumgärtner
Publikováno v:
Journal of the Global Power and Propulsion Society, Vol 1, Iss 1 (2017)
The low reactivity of natural gas leads to a sudden increase of carbon monoxide (CO) and unburned hydrocarbons (UHC) emissions below a certain load level, which limits the part load operation range of current utility gas turbines in combined cycle po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::244f7de20e62a578b55c322873666b7a
https://doi.org/10.22261/d0hpa5
https://doi.org/10.22261/d0hpa5
Autor:
Andreas Stadler, Andreas Bergmaier, Günther Dollinger, Walter Hansch, I. Genchev, Ignaz Eisele, V Petrova-Koch, H Baumgärtner
Publikováno v:
Microelectronics Reliability. 41:977-980
Oxidation of nitrogen implanted substrates results in so called silicon-oxinitride layers (Si x O y N z layers) which are dependent on implantation dose and energy always thinner than pure silicon-oxides (SiO 2 ) produced under the same oxidation con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a2797a5880407f7c3951debbea09fce
https://doi.org/10.1016/s0026-2714(01)00051-8
https://doi.org/10.1016/s0026-2714(01)00051-8