Zobrazeno 1 - 10
of 70
pro vyhledávání: '"H. Bartolf"'
Autor:
Lars Knoll, Giovanni Alfieri, Enea Bianda, A. Mihaila, Vinoth Kumar Sundaramoorthy, H. Bartolf, Renato Minamisawa, Munaf Rahimo
Publikováno v:
Materials Science Forum. 897:471-474
This paper presents an investigation regarding the influence of the active area design on the static and dynamic performance of SiC JBS diodes. The analysis has been performed on fabricated JBS diodes, rated for 1.7kV applications. For the active are
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::739def4b96eb1111848ef137681fcf02
https://doi.org/10.4028/www.scientific.net/msf.897.471
https://doi.org/10.4028/www.scientific.net/msf.897.471
Autor:
Stefan Goedecker, Dipanwita Dutta, Joerg Lehmann, Shantanu Roy, H. Bartolf, Giovanni Alfieri, Daniel Fan, Massimo Camarda, Deb Sankar De, Maximilian Amsler, Thomas A. Jung
High power SiC MOSFET technologies are critical for energy saving in, e.g., distribution of electrical power. They suffer, however, from low near-interface mobility, the origin of which has not yet been conclusively determined. Here, we present uniqu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cdcb62a3fc3cfa3d1d0c43e9a9ee4d6
https://edoc.unibas.ch/73212/
https://edoc.unibas.ch/73212/
Autor:
Alexander Bubendorf, Ernst Meyer, Adolf Schöner, Harald Rossmann, Urs Gysin, Andy Zhang, Thilo Glatzel, H. Bartolf, Sergey A. Reshanov, Thomas A. Jung
Publikováno v:
Materials Science Forum. 858:497-500
The shielding cell architecture of a buried grid (BG) Junction Barrier Schottky (JBS) diode consisting of multiple consecutive p+-implanted stripes below the metal/semiconductor interface has been observed by performing non-contact Scanning Probe Mic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20058b42277e2336d930c3a3caeaf6c7
https://doi.org/10.4028/www.scientific.net/msf.858.497
https://doi.org/10.4028/www.scientific.net/msf.858.497
Autor:
Victor V. Luchinin, Giovanni Alfieri, Aleksey I. Mikhaylov, H. Bartolf, Lars Knoll, Alexey V. Afanasyev, Sergey A. Reshanov, Adolf Schöner, Renato Minamisawa
Publikováno v:
Materials Science Forum. 858:651-654
High channel mobility 4H-SiC MOSFETs have been demonstrated by phosphorus and arsenic implantation prior to thermal oxidation in N2O. The maximum field-effect mobility of 81 and 114 cm2/Vs were achieved, respectively. The MOSFET fabrication was done
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::659ed0dcaffcfd9c3120dcf1fbfc845d
https://doi.org/10.4028/www.scientific.net/msf.858.651
https://doi.org/10.4028/www.scientific.net/msf.858.651
Publikováno v:
Materials Science Forum. 858:782-785
The in-depth design optimization of the active layer of the 1700V class 4H-SiC JBS/MPS diode structure is discussed. The important design parameters such as junction depth (d), width (w) of p+ areas, and spacing (s) between them were optimized for th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d1840920b618580c62833f1565b8e0
https://doi.org/10.4028/www.scientific.net/msf.858.782
https://doi.org/10.4028/www.scientific.net/msf.858.782
Autor:
Urs Gysin, Adolf Schöner, Thomas Schmölzer, Ernst Meyer, Sergey A. Reshanov, Thilo Glatzel, H. Bartolf
Publikováno v:
Beilstein Journal of Nanotechnology
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 2485-2497 (2015)
Beilstein Journal of Nanotechnology, Vol 6, Iss 1, Pp 2485-2497 (2015)
Background: The resolution in electrostatic force microscopy (EFM), a descendant of atomic force microscopy (AFM), has reached nanometre dimensions, necessary to investigate integrated circuits in modern electronic devices. However, the characterizat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d5fd5208023e25d353d5b68b66ce7e59
https://doi.org/10.3762/bjnano.6.258
https://doi.org/10.3762/bjnano.6.258
Autor:
Thomas A. Jung, H. Bartolf, Urs Gysin, Thilo Glatzel, H.R. Rossmann, Sergey A. Reshanov, Adolf Schöner, Ernst Meyer
Publikováno v:
Microelectronic Engineering. 148:1-4
Display Omitted We discuss the concept of Junction Barrier Schottky diodes.We perform dopant imaging of implanted p+ regions.We perform numerical device simulations for application voltages of 3.3kV (traction). In order to avoid a premature breakdown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7719ce08f32c2504b45bed81ea9bc411
https://doi.org/10.1016/j.mee.2015.04.011
https://doi.org/10.1016/j.mee.2015.04.011
Autor:
Ernst Meyer, Frederic Zanella, Nenad Marjanovic, Thomas A. Jung, Alexander Bubendorf, H. Bartolf, H.R. Rossmann, Marc Schnieper, Jens Gobrecht, R.A. Minamisawa
Publikováno v:
Microelectronic Engineering. 145:166-169
The aim of this study is to combine the UMOSFET design with its U-shape trench-gate architecture which is well-established in silicon technology and benefits from a reduction in cell pitch size as well as from the elimination of the junction-FET regi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aad40c2822eac2f51a37693ea97579c6
https://doi.org/10.1016/j.mee.2015.07.002
https://doi.org/10.1016/j.mee.2015.07.002
Autor:
Alexander Bubendorf, Sergey A. Reshanov, Urs Gysin, Adolf Schöner, Ernst Meyer, H.R. Rossmann, Thilo Glatzel, Thomas A. Jung, H. Bartolf
Publikováno v:
Materials Science Forum. :269-272
Electronically active dopant profiles of epitaxially grownn-type 4H-SiC calibration layer structures with concentrations ranging from 3.1015cm-3to 1·1019cm-3have been investigated by non-contact Scanning Probe Microscopy (SPM) methods. We have shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33a2ef37f30e2d17f318456f1ae38fbd
https://doi.org/10.4028/www.scientific.net/msf.821-823.269
https://doi.org/10.4028/www.scientific.net/msf.821-823.269
Autor:
Alexey V. Afanasyev, Renato Minamisawa, Giovanni Alfieri, Lars Knoll, H. Bartolf, Victor V. Luchinin, Aleksey I. Mikhaylov, Sergey A. Reshanov, Adolf Schöner
Publikováno v:
Materials Science Forum. :480-483
Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::401b47957387bf12e8fcc80d861224cd
https://doi.org/10.4028/www.scientific.net/msf.821-823.480
https://doi.org/10.4028/www.scientific.net/msf.821-823.480