Zobrazeno 1 - 5
of 5
pro vyhledávání: '"H. B. Cherry"'
Publikováno v:
Microelectronic Engineering. 55:403-408
Ru(sub 1)Si(sub 1)O(sub 4) thin films were deposited on Si and oxidized Si substrates by reactive rf magnetron sputtering of a Ru(sub 1)Si(sub 1) target in an argon/oxygen gas mixture.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb8b6aac976303088a1842f510de0518
https://doi.org/10.1016/s0167-9317(00)00474-3
https://doi.org/10.1016/s0167-9317(00)00474-3
Publikováno v:
Microelectronic Engineering. 55:183-188
Films (220 nm-thick) deposited by reactive rf sputtering from a Ti 3 Si target with an argon/oxygen gas mixture were annealed for 30 min in vacuum at temperatures between 400 and 900°C. The films were characterized by 2 MeV He 2+ backscattering spec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ba27e14f711e3a22447132688171291
https://doi.org/10.1016/s0167-9317(00)00446-9
https://doi.org/10.1016/s0167-9317(00)00446-9
Autor:
G. Scott Hubbard, R. P. Reade, Jeffrey W. Beeman, E. E. Haller, H. B. Cherry, Robert E. McMurray
Publikováno v:
Integrated Ferroelectrics. 15:261-269
Potassium tantalate niobate (KTN) thin film pyroelectric detectors are being developed for broad band spaceborne sensors where passively cooled operating temperatures ∼ 90K are easily attained. The ability to tailor the phase transition temperature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6f7a3b3dee745f36c207afd043273f
https://doi.org/10.1080/10584589708015717
https://doi.org/10.1080/10584589708015717
Publikováno v:
Thin Solid Films. 406:299-301
X-ray-amorphous films 210 nm thick of Ir18Si15O67 were deposited by reactive sputtering of a target of iridium and silicon on substrates of oxidized silicon wafers, and subsequently annealed for 1 h at 700 °C in dry oxygen at pressures of 0.2, 8.0 o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6157a7168b81dfd3087dac3d59f32a2
https://doi.org/10.1016/s0040-6090(01)01789-8
https://doi.org/10.1016/s0040-6090(01)01789-8
Publikováno v:
Journal of Applied Physics. 79:5169
La0.8Sr0.2MnO3thin films were simultaneously deposited by pulsed laserablation on silicon (Si) and LaAlO3 (LAO) substrates. Films on Si were polycrystalline while those on LAO were (100) epitaxial with an in‐plane correlation length of ≊10 nm. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3f9188da7c2c8e0467f2c189934a6946
https://doi.org/10.1063/1.361919
https://doi.org/10.1063/1.361919