Zobrazeno 1 - 10 of 197 pro vyhledávání: '"H. Aziza"'
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Akademický článek
An Energy-Efficient Current-Controlled Write and Read Scheme for Resistive RAMs (RRAMs)
Autor: H. Aziza, M. Moreau, M. Fieback, M. Taouil, S. Hamdioui
Publikováno v: IEEE Access, Vol 8, Pp 137263-137274 (2020)
Energy efficiency remains one of the main factors for improving the key performance markers of RRAMs to support IoT edge devices. This paper proposes a simple and feasible low power design scheme which can be used as a powerful tool for energy reduct
Externí odkaz: https://doaj.org/article/fdca6ed8d2fc4b55b02ba52c16a99624
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3
The Composting Technique of Empty Palm Oil Bunches Waste by The Applicaton of Diverse Moles to Increase Quality of Compost and Chili Growth
Autor: Sri Ngapiyatun, H Aziza, Fadli Mulyadi, Wartomo Wartomo, Jamaluddin Jamaluddin
Publikováno v: Global Journal of Agricultural Research. 10:55-69
The process of palm oil bunches in the factory produces abundant wastes, both solid and liquid wastes, whereas the processing of 1 ton palm oil bunches will produce 21-23% empty bunches and 0.4-0.7 tons liquid wastes. However, it is the biggest probl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::935a6413bcd405231a61d938c15b8bc7
https://doi.org/10.37745/gjar.2013/vol10n55569
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4
STATE: A Test Structure for Rapid and Reliable Prediction of Resistive RAM Endurance
Autor: H. Aziza, J. Postel-Pellerin, M. Moreau
Publikováno v: IEEE Transactions on Device and Materials Reliability
IEEE Transactions on Device and Materials Reliability, 2022, 22 (4), pp.500-505. ⟨10.1109/TDMR.2022.3213191⟩
International audience; Characterizing and quantifying the endurance of Resistive RAM devices is critical to assess their reliability for integration in electronic systems. This paper proposes a novel characterization methodology for rapid detection
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::edb0f028b6550556cee9b3d629b91935
https://hal.science/hal-03941082/file/TDMR-2022-09-0225-R_Proof_hi-2.pdf
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6
Gate stress reliability of a novel trench-based Triple Gate Transistor
Autor: R. Gay, V. Della Marca, H. Aziza, P. Laine, A. Regnier, S. Niel, A. Marzaki
Publikováno v: Microelectronics Reliability
Microelectronics Reliability, 2021, 126, pp.114233. ⟨10.1016/j.microrel.2021.114233⟩
Microelectronics Reliability, Elsevier, 2021, 126, pp.114233. ⟨10.1016/j.microrel.2021.114233⟩
International audience; This paper addresses the reliability on a novel trench-based Triple Gate Transistor (TGT) fabricated in a 40nm embedded Non-Volatile Memory (e-NVM) technology. In the studied device, two vertical transistors are integrated in
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::18b8bfe25ba97c2635ae2b3ad0f9898a
https://hal.science/hal-03500202/document
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8
A Novel Trench-Based Triple Gate Transistor With Enhanced Driving Capability
Autor: R. Gay, V. Della Marca, H. Aziza, M. Mantelli, F. Trenteseaux, F. La Rosa, A. Regnier, S. Niel, A. Marzaki
Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, 2021, 42 (6), pp.832-834. ⟨10.1109/LED.2021.3076609⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2021, 42 (6), pp.832-834. ⟨10.1109/LED.2021.3076609⟩
This letter addresses the design, implementation, and characterization of a novel high-density Triple Gate Transistor in a 40 nm embedded Non-Volatile Memory technology. Deep trenches are used to integrate two vertical transistors connected in parall
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::37c4cc7118aba766daffaa395352bce5
https://hal.science/hal-03504285/document
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9
A Capacitor-Less CMOS Neuron Circuit for Neuromemristive Networks
Autor: H. Aziza, Mathieu Moreau, Patrick Girard, A Perez, Arnaud Virazel
Publikováno v: 17th International Conference on Electronics Circuits and Systems (NEWCAS)
17th International Conference on Electronics Circuits and Systems (NEWCAS), Jun 2019, Munich, Germany. ⟨10.1109/NEWCAS44328.2019.8961278⟩
NEWCAS
NEWCAS 2019-17th IEEE International Conference on Electronics Circuits and Systems
NEWCAS 2019-17th IEEE International Conference on Electronics Circuits and Systems, Jun 2019, Munich, Germany. ⟨10.1109/NEWCAS44328.2019.8961278⟩
International audience; CMOS neuron circuits used to implement neuromorphic chips require extensive circuitry to program the memristive cell, thus eliminating most of the density advantage gained by the adoption of memristive synapses. This paper pre
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27a784bf3b2306c2d783b4a8dd321414
https://hal-lirmm.ccsd.cnrs.fr/lirmm-02395325
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10
A configurable operational amplifier based on oxide resistive RAMs
Autor: H. Aziza, A. Perez, C. Dufaza
Publikováno v: 2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS)
2018 13th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS), Apr 2018, Taormina, France. pp.1-2, ⟨10.1109/DTIS.2018.8368572⟩
DTIS
This paper proposes a memristor-based operational amplifier design in which semiconductors resistors are suppressed and replaced by memristors. Such design is developed based on a calibrated memristor model, and offers dynamic configurabilty to reali
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0cee0efc50727eb76f8402eb3dac7cce
https://hal.archives-ouvertes.fr/hal-02314659
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