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Electrical conduction mechanisms and dielectric relaxation in Al2O3 thin films deposited by thermal atomic layer deposition

Autor: Kemal Kaplan, H. Altuntas

Publikováno v: Materials Science in Semiconductor Processing. 86:111-114

In the present work, aluminum oxide (Al2O3) thin films were deposited on p-type silicon substrates by thermal atomic layer deposition technique. The structural properties of as-deposited Al2O3 thin films were characterized by grazing-incidence x-ray

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e29d0b18c96197f9a4560904f5df754a
https://doi.org/10.1016/j.mssp.2018.06.027

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Pomalidomide, bortezomib, and dexamethasone for patients with relapsed or refractory multiple myeloma previously treated with lenalidomide (OPTIMISMM): a randomised, open-label, phase 3 trial

Autor: Richardson, P.G. Oriol, A. Beksac, M. Liberati, A.M. Galli, M. Schjesvold, F. Lindsay, J. Weisel, K. White, D. Facon, T. San Miguel, J. Sunami, K. O'Gorman, P. Sonneveld, P. Robak, P. Semochkin, S. Schey, S. Yu, X. Doerr, T. Bensmaine, A. Biyukov, T. Peluso, T. Zaki, M. Anderson, K. Dimopoulos, M. Abildgaard, N. Adler, H. Altuntas, F. Akay, O.M. Amin, B. Anagnostopoulos, A. Anderson, L. Anttila, P. Araujo, C. Arce-Lara, C. Aydin, Y. Basu, S. Battini, R. Beeker, T. Benboubker, L. Ben-Yehuda, D. Bladé, J. Blau, I.W. Boccia, R. Burke, L. Byeff, P. Cascavilla, N. Cavo, M. Chantry, A. Charles, Y. Chaudhry, A. Corso, A. Coyne, M. De Arriba, F. Delimpasi, S. Desjardins, P. Dhakal, B. Di Bartolomeo, P. Di Raimondo, F. Dürig, J. Engelhardt, M. Escoffre-Barbe, M. Esteves, G. Flogegard, M. Gabrail, N. Gamberi, B. Garrison, M. Gay, J. Gisslinger, H. Goldschmidt, H. Goncalves, C. Gressot, L. Grosicki, S. Hanna, W. Hayden, P. Henriques Bernardo, M.M. Hermann, R. Holden, V. Honkalehto, K. Huben, M. Huffman, J. Hunter, H. Hus, M. Jagasia, M. Jagganath, S. Janakiram, M. Jaiyesimi, I. Jenner, M. João, C. Johnson, P. Jurcyszyn, A. Kalayoğlu Beşişik, S. Kambhampati, S. Kanate, A. Karadoğan, I. Khojasteh, A. Kirkel, D. Komarnicki, M. Krauth, M.-T. Kuriakose, P. Larocca, A. Lauri, B. Leleu, X. Lucio, P. Luppi, M. Mangiacavalli, S. Mariette, C. Matsue, K. Mellqvist, U.-H. Mendeleeva, L. Meshad, M. Miller, C. Mohrbacher, A. Moreau, P. Morelli, A.M. Müldür, E. Naassan, A. Nahi, H. Nair, R. O'Dwyer, M. Öngören Aydin, S. Openshaw, T. O'Rourke, T. Osswald, M. Overton, L. Pati, A. Pavic, M. Pegourie, B. Pehlivan, M. Pierola, A.A. Plesner, T. Pluta, A. Rabin, N. Ramasamy, K. Rambaldi, A. Rodriguez, P. Röllig, C. Rosenblatt, J. Rosenbluth, J. Salomo, M. Samoylova, O. Sastre Moral, J. Sati, H. Selleri, C. Shafeek, S. Shinagawa, A. Sleckman, B. Smith, C. Sonmez, M. Stone, C. Streetly, M. Suzuki, K. Taetle, R. Tafuri, A. Takezako, N. Teke, H.Ü. Vapaatalo, M. Vassilopoulos, G. Verma, A. Vidito, S. Viterbo, L. Vural, F. Wang, X.S. Yağci, M. Yee, A. OPTIMISMM trial investigators

Background: As lenalidomide becomes increasingly established for upfront treatment of multiple myeloma, patients refractory to this drug represent a population with an unmet need. The combination of pomalidomide, bortezomib, and dexamethasone has sho

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2127::60a64e8be607a2d94110070c4a87c17f
https://pergamos.lib.uoa.gr/uoa/dl/object/uoadl:3122238

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A comparative study on electrical characteristics of crystalline AlN thin films deposited by ICP and HCPA-sourced atomic layer deposition

Autor: Turkan Bayrak, H. Altuntas

Publikováno v: Electronic Materials Letters. 13:114-119

In this work, we aimed to investigate the effects of two different plasma sources on the electrical properties of low-temperature plasma-assisted atomic layer deposited (PA-ALD) AlN thin films. To compare the electrical properties, 50 nm thick AlN fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::48ebb9f7501b25a53c3d0a6b5f07a626
https://doi.org/10.1007/s13391-017-6111-z

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Effect of Film Thickness on the Electrical Properties of AlN Films Prepared by Plasma-Enhanced Atomic Layer Deposition

Autor: H. Altuntas, Cagla Ozgit-Akgun, Necmi Biyikli, Inci Donmez

Publikováno v: IEEE Transactions on Electron Devices

In this paper, AlN thin films with two different thicknesses, i.e., 7 and 47 nm, were deposited at 200 °C on p-type Si substrates by plasma-enhanced atomic layer deposition using trimethylaluminum and ammonia. To investigate the electrical character

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8e0511cba771dba80bcacb090eae8173
https://doi.org/10.1109/ted.2015.2476597

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Akademický článek

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Strain-Stress Analysis of AlGaN/GaN Heterostructures With and Without an AlN Buffer and Interlayer

Autor: Y. Hongbo, Ekmel Ozbay, Süleyman Özçelik, H. Altuntas, S. Çörekçi, Mustafa Öztürk

Publikováno v: Strain. 47:19-27

The strain–stress analysis of AlxGa1−xN/GaN (x = 0.3) heterostructures with and without a high-temperature HT-AlN interlayer (IL) grown on sapphire (Al2O3) substrates and AlN buffer/Al2O3 templates via metal organic chemical vapour deposition (MO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e988f1447407b1f1983ffe4079071a8a
https://doi.org/10.1111/j.1475-1305.2009.00730.x

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