Zobrazeno 1 - 10
of 17
pro vyhledávání: '"H. Alex Hsain"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
H Alex Hsain, Younghwan Lee, Suzanne Lancaster, Patrick D Lomenzo, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Gregory N Parsons, Jacob L Jones
Publikováno v:
Nanotechnology.
Hf0.5Zr0.5O2 (HZO) thin films are promising candidates for non-volatile memory and other related applications due to their demonstrated ferroelectricity at the nanoscale and compatibility with Si processing. However, one reason that HZO has not been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ea508370cb456e5487f5e1593eae2858
https://pubmed.ncbi.nlm.nih.gov/36538824
https://pubmed.ncbi.nlm.nih.gov/36538824
Publikováno v:
Sustainable Materials and Technologies. 35:e00524
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13a49beb447ec7ea5b288f6ac4fbca10
https://doi.org/10.1016/j.susmat.2022.e00524
https://doi.org/10.1016/j.susmat.2022.e00524
Publikováno v:
Journal of Materials Chemistry A. 8:13437-13442
In this work, a new surface engineering technique through UV/ozone treatment to improve the oxygen evolution reaction performance of nickel-iron hydroxide based catalysts has been developed. It is found that UV/ozone treatment can significantly impro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::83721acd337ce9c45e287b7a142c8d50
https://doi.org/10.1039/d0ta03470c
https://doi.org/10.1039/d0ta03470c
Autor:
Younghwan Lee, Rachel A. Broughton, H. Alex Hsain, Seung Keun Song, Patrick G. Edgington, Madison D. Horgan, Amy Dowden, Amanda Bednar, Dong Hyun Lee, Gregory N. Parsons, Min Hyuk Park, Jacob L. Jones
Publikováno v:
Journal of Applied Physics. 132:244103
Ferroelectric (Hf,Zr)O2 thin films have attracted increased interest from the ferroelectrics community and the semiconductor industry due to their ability to exhibit ferroelectricity at nanoscale dimensions. The properties and performance of the ferr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6d303a2c2959072507185faaee50523e
https://doi.org/10.1063/5.0128038
https://doi.org/10.1063/5.0128038
Publikováno v:
Nanotechnology. 32(48)
Ferroelectric random-access memory (FRAM) based on conventional ferroelectric materials is a non-volatile memory with fast read/write operations, high endurance, and 10 years of data retention time. However, it suffers from destructive read-out opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::088cfcafe2b40a10548655a73102ec35
https://pubmed.ncbi.nlm.nih.gov/34407525
https://pubmed.ncbi.nlm.nih.gov/34407525
Autor:
Xinghao Hu, Xiaojing Wang, Fa-tang Li, Xiaojie Lou, Ran Su, Dawei Zhang, Stephen J. Pennycook, Yong Yang, Xue-min Chen, H. Alex Hsain, Ming Wu, Lina Zhu, Zhipeng Wang, Yaodong Yang
Publikováno v:
Angewandte Chemie International Edition. 58:15076-15081
Piezocatalysis, converting mechanical vibration into chemical energy, has emerged as a promising candidate for water-splitting technology. However, the efficiency of the hydrogen production is quite limited. We herein report well-defined 10 nm BaTiO3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4aa3dd0de51ac1d0be00038e88a29ad
https://doi.org/10.1002/anie.201907695
https://doi.org/10.1002/anie.201907695
Autor:
Alexis Payne, H. Alex Hsain, Younghwan Lee, Nicholas A. Strnad, Jacob L. Jones, Brendan Hanrahan
Publikováno v:
Applied Physics Letters. 120:232901
HfO2-based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreporte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e718c5219891c6d709d01801c4e422ce
https://doi.org/10.1063/5.0083656
https://doi.org/10.1063/5.0083656
Publikováno v:
Journal of Science Policy & Governance. 17
In the United States many women in science, technology, engineering, and mathematics (STEM) leave their careers after becoming a parent. Attrition is simultaneously occurring with workforce shortages in STEM with two million jobs potentially unfilled
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d86e1fbcfc6274ca986054e62374b58c
https://doi.org/10.38126/jspg170207
https://doi.org/10.38126/jspg170207
Publikováno v:
Nanotechnology. 32:485204
Ferroelectric random-access memory (FRAM) based on conventional ferroelectric materials is a non-volatile memory with fast read/write operations, high endurance, and 10 years of data retention time. However, it suffers from destructive read-out opera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d7fc0905e150ee828c2aa56d1d7e3c4
https://doi.org/10.1088/1361-6528/ac1ebe
https://doi.org/10.1088/1361-6528/ac1ebe