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pro vyhledávání: '"H. A. A. Abdelbagi"'
Autor:
H. A. A. Abdelbagi, T. A. O. Jafer, V. A. Skuratov, E. G. Njoroge, M. Mlambo, T. T. Hlatshwayo, J. B. Malherbe
Publikováno v:
Frontiers in Nuclear Engineering. 1
Polycrystalline SiC wafers were implanted with 360 keV strontium (Sr) ions at room temperature (RT)to a fluence of 2 × 1016 cm−2. Some of the implanted samples were irradiated with xenon (Xe) ions of 167 MeV to a fluence of 3.4 × 1014 cm−2 and