Zobrazeno 1 - 10
of 3 416
pro vyhledávání: '"H. Riechert"'
Publikováno v:
Physical Review Research, Vol 5, Iss 3, p 033199 (2023)
We propose a platform for observing the Josephson diode effect: the Andreev molecule. This nonlocal electronic state is hosted in circuits made of two closely spaced Josephson junctions, through the hybridization of the Andreev states. The Josephson
Externí odkaz:
https://doaj.org/article/be46d516478548a4aa2c791f9f3197f9
Akademický článek
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Publikováno v:
AIP Advances, Vol 2, Iss 1, Pp 012157-012157-6 (2012)
GaN nanowires were grown without any catalyst by plasma-assisted molecular beam epitaxy. Under supply of Mg, nanowire nucleation is faster, the areal density of wires increases to a higher value, and nanowire coalescence is more pronounced than witho
Externí odkaz:
https://doaj.org/article/217768c25e194d3e8841eec207360e16
Autor:
J M Wofford, M H Oliveira Jr, T Schumann, B Jenichen, M Ramsteiner, U Jahn, S Fölsch, J M J Lopes, H Riechert
Publikováno v:
New Journal of Physics, Vol 16, Iss 9, p 093055 (2014)
Graphene is grown by molecular beam epitaxy using epitaxial Ni films on MgO(111) as substrates. Raman spectroscopy and scanning tunneling microscopy reveal the graphene films to have few crystalline defects. While the layers are ultra-smooth over lar
Externí odkaz:
https://doaj.org/article/8691cac726dd49d3bf881d434a85e58d
Autor:
T Schumann, M Dubslaff, M H Oliveira Jr, M Hanke, F Fromm, T Seyller, L Nemec, V Blum, M Scheffler, J M J Lopes, H Riechert
Publikováno v:
New Journal of Physics, Vol 15, Iss 12, p 123034 (2013)
Growth of nanocrystalline graphene films on (6√3 × 6√3) R 30°-reconstructed SiC surfaces was achieved by molecular beam epitaxy, enabling the investigation of quasi-homoepitaxial growth. The structural quality of the graphene films, which is in
Externí odkaz:
https://doaj.org/article/3a24646a7e3d4e5f91cc3eea81528c66
Autor:
F Fromm, M H Oliveira Jr, A Molina-Sánchez, M Hundhausen, J M J Lopes, H Riechert, L Wirtz, T Seyller
Publikováno v:
New Journal of Physics, Vol 15, Iss 4, p 043031 (2013)
We report a Raman study of the so-called buffer layer with $(6\sqrt 3\times 6\sqrt 3)R30^{\circ }$ periodicity which forms the intrinsic interface structure between epitaxial graphene and SiC(0001). We show that this interface structure leads to a no
Externí odkaz:
https://doaj.org/article/739cb0819fb44e638b6a2d1f5e945a46
Publikováno v:
Repositório Institucional da UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bc3527b396248e7542ee84835e5c1fe3
Akademický článek
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Publikováno v:
Thin Solid Films. 556:120-124
We demonstrate Fe3Si/Ge/Fe3Si/GaAs(001) structures grown by molecular-beam epitaxy and characterized by transmission electron microscopy, electron backscattered diffraction, and X-ray diffraction. The bottom Fe3Si epitaxial film on GaAs is always sin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6750a6664f829d6c1c2f5acb203437c1
https://doi.org/10.1016/j.tsf.2014.01.022
https://doi.org/10.1016/j.tsf.2014.01.022
Autor:
H. Riechert, Handong Sun, Martin D. Dawson, F. Robert, John H. Marsh, P. Gilet, A. Million, A.C. Bryce, L. Grenouillet, Roberto Macaluso, Stephane Calvez
Publikováno v:
Materials Science and Engineering: C. 23:983-987
We report the unambiguous demonstration of controlled quantum well intermixing (QWI) in the technologically important GaInNAs/ GaAs 1.3 mum material system. QWI is a key technique to selectively modify the band gap of quantum wells, which has found b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::da5e79607004ad1ea826ebea74a8c5f8
https://doi.org/10.1016/j.msec.2003.09.071
https://doi.org/10.1016/j.msec.2003.09.071