Zobrazeno 1 - 10
of 28
pro vyhledávání: '"H. Hosack"'
Autor:
Victor V. Zhirnov, Daniel J. C. Herr, T. A. Wooldridge, George I. Bourianoff, J.A. Hutchby, W. H. Joyner, H. H. Hosack, Ralph K. Cavin
Publikováno v:
Journal of Nanoparticle Research. 7:573-586
This paper presents a summary of the second workshop on Silicon Nanoelectronics and Beyond held at the National Science Foundation in Washington DC in December 2004. The objective was to set research directions to vigorously pursue both extending the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4c7decceb28ba7d49f59482b9ff60c1
https://doi.org/10.1007/s11051-005-7528-0
https://doi.org/10.1007/s11051-005-7528-0
Autor:
H. H. Hosack
Publikováno v:
The Electrochemical Society Interface. 2:51-57
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::592caf20560c1641d60362c1ed25a30c
https://doi.org/10.1149/2.f07931if
https://doi.org/10.1149/2.f07931if
Publikováno v:
Journal of Applied Physics. 73:1461-1470
A closed form analytic solution to the growth characteristics of the separation by implantation of oxygen (SIMOX) buried oxide and silicon film, based on a two‐sided Gaussian approximation to the oxygen implant profile in the SIMOX process, is pres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f9cac5bcfd0d7a074cc7d35c98c0a3e
https://doi.org/10.1063/1.353220
https://doi.org/10.1063/1.353220
Autor:
M. K. El-Ghor, J. Hollingsworth, H. H. Hosack, George A. Brown, Keith A. Joyner, Gordon P. Pollack
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aedd14052758f47f6fb61e77463d8267
https://doi.org/10.1109/soi.1992.664813
https://doi.org/10.1109/soi.1992.664813
Autor:
H. Hosack
Publikováno v:
IEEE SOS/SOI Technology Conference.
Summary form only given, as follows. Silicon-on insulator (SOI) has been advertised as the next-generation technology for both radiation hardened and commercial large-scale ICs several years. Realization of the promises of this technology, particular
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c428f3059ad6dc6623b0685f33da3a3b
https://doi.org/10.1109/soi.1989.69750
https://doi.org/10.1109/soi.1989.69750
Publikováno v:
Proceedings of 11th International Conference on Ion Implantation Technology.
Two pre-amorphization techniques, shallow and deep amorphization using Si implants have been evaluated for obtaining shallow p-type junctions using B or BF/sub 2/ implants followed by a Rapid Thermal Anneal (RTA) step. The effect on diffusion behavio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc4943fbbed39f6942adc2bec7ae94b
https://doi.org/10.1109/iit.1996.586104
https://doi.org/10.1109/iit.1996.586104
Publikováno v:
Proceedings. IEEE International SOI Conference.
The integrity of gate oxides formed on the device surfaces of SIMOX wafers has been a concern because of the structural imperfection of SIMOX superficial silicon layers compared to bulk silicon and the potential for metal contamination during the ext
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05fec55672424fcf7a5c9dee5e1259d6
https://doi.org/10.1109/soi.1994.514252
https://doi.org/10.1109/soi.1994.514252
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors describe the results of an analytic investigation of SIMOX (separation by implanted oxygen) oxide/silicon profiles using a joined half-Gaussian approximation to the instantaneous oxygen implant distribution. The advantage of this approach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee710abf20e8bd3f5a3d3b71a828c5c7
https://doi.org/10.1109/soi.1991.162914
https://doi.org/10.1109/soi.1991.162914
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
The authors report on an extensive study of a Secco etch process for determining dislocation densities that was performed by three different groups using nine SIMOX (separation by implanted oxygen) wafers from the same lot. The average dislocation de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::204486fe05427fd637b2bd43bc25a2f2
https://doi.org/10.1109/soi.1991.162885
https://doi.org/10.1109/soi.1991.162885
Publikováno v:
1991 IEEE International SOI Conference Proceedings.
An array of artificial particles composed of silicon dioxide was created by growing a film of SiO/sub 2/ one micron thick on a wafer surface, then patterning and etching the film to create barriers of various sizes and shapes. Two of the more interes
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b975aff8238ce6fb640660413f2c191
https://doi.org/10.1109/soi.1991.162828
https://doi.org/10.1109/soi.1991.162828