Zobrazeno 1 - 10
of 62
pro vyhledávání: '"H-P. Gauggel"'
Autor:
A.R. Boyd, S.J. Fancey, M. G. Forbes, Andrew C. Walker, Paul Horan, Sven Eitel, Jean-Louis Gutzwiller, Mohammad R. Taghizadeh, John Hegarty, D. Byrne, Karlheinz H. Gulden, J.A.B. Dines, Philippe Benabes, A. Gauthier, Gerald S. Buller, Marc P.Y. Desmulliez, C.R. Stanley, H.-P. Gauggel, Giovanni Pennelli, M. Goetz
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 5:236-249
The completed detailed design and initial phases of construction of an optoelectronic crossbar demonstrator are presented. The experimental system uses hybrid very large scale integrated optoelectronics technology whereby InGaAs-based detectors and m
Autor:
Andreas Hangleiter, Christian Geng, H.-P. Gauggel, Heinz Schweizer, M. Burkard, A. Moritz, F. Scholz, R. Wirth
Publikováno v:
Scopus-Elsevier
As many other ternary and quaternary compound semiconductors, GaInP shows natural superlattice ordering consisting of Ga-rich and In-rich (111) crystal planes which causes a strong change of many material properties. This paper presents three example
Autor:
H.-P. Gauggel, Veit Wagner, R. Hofmann, F. Adler, Heinz Schweizer, P. Ernst, F. Scholz, H. Bolay, A. Sohmer
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 3:456-460
Room-temperature (RT) operation of optically pumped GaN-GaInN distributed-feedback (DFB) lasers is demonstrated in the spectral range from 400 to 415 nm. The ridge-waveguide distributed feedback lasers were realized by dry etching on a GaN-GaInN doub
Autor:
A. Menschig, H.-P. Gauggel, H.J. Brückner, R. Zengerle, H. Gräbeldinger, A. Hase, V. Hofsäβ, Heinz Schweizer, C. Kaden
Publikováno v:
Microelectronic Engineering. 23:469-472
The high contrast resist AZPN114 has been investigated with respect to its suitability for realizing optically active and passive structures. Two devices with completely different size and shape in their substructure were fabricated avoiding any comp
Publikováno v:
Applied Physics Letters. 77:2283-2285
Coupled arrays of vertical-cavity surface-emitting lasers were realized by patterning the reflectivity of the top-distributed Bragg reflector using a phase-matching layer and a metal grid. For improved current injection and better heat dissipation th
Autor:
Mohammad R. Taghizadeh, Sven Eitel, S.J. Fancey, Karlheinz H. Gulden, W. Bachtold, H.-P. Gauggel
Publikováno v:
IEEE Photonics Technology Letters. 12:459-461
In this paper, work is described on the fabrication of highly uniform 8/spl times/8 arrays of GaAs-AlGaAs vertical-cavity surface-emitting lasers (VCSEL's). Oxide-confined VCSEL arrays show an average threshold current of 0.74/spl plusmn/0.02 mA, an
Publikováno v:
IEEE Photonics Technology Letters. 11:1533-1535
The linewidth of electrically pumped vertical-cavity surface-emitting lasers optimized for spectroscopic applications in the near-infrared has been examined in detail. Both a high-resolution scanning Fabry-Perot interferometer and a delayed self-homo
Autor:
Erich Gornik, A. Golshani, H.-P. Gauggel, R. Winterhoff, A. Kock, M. H. Pilkuhn, P. O. Kellermann
Publikováno v:
Applied Physics Letters. 70:2374-2376
Single-mode and single-beam surface emission (675–680 nm) has been achieved from visible red GaInP/AlGaInP laser diodes by applying the surface mode emission technique. The laser diodes emit a single beam via the surface with a beam divergence of 0
Publikováno v:
IEEE Photonics Technology Letters. 9:14-16
Wide range wavelength tuning is demonstrated for short wavelength GaInP-AlGaInP distributed feedback lasers by controlling the injection currents in a two-section laser. Simple superstructure gratings were used to tune the emission wavelength over 4.
Autor:
Marc P.Y. Desmulliez, John Hegarty, J.J. Casswell, J. L. Pearson, Gerald S. Buller, Andrew C. Walker, Sven Eitel, J. Oksman, P. Horan, Jean-Louis Gutzwiller, M. G. Forbes, H.-P. Gauggel, S.J. Fancey, D. Byrne, J.A.B. Dines, Karlheinz H. Gulden, A. Gauthier, C.R. Stanley, M. Goetz, A.R. Boyd, M. R. Taghizadeh, Philippe Benabes, Giovanni Pennelli
The experimental operation of a terabit-per-second scale optoelectronic connection to a silicon very-large-scale-integrated circuit is described. A demonstrator system, in the form of an optoelectronic crossbar switch, has been constructed as a techn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de901149a5e5ef0ed1cde8ba94644561
https://eprints.gla.ac.uk/3899/1/3899.pdf
https://eprints.gla.ac.uk/3899/1/3899.pdf