Zobrazeno 1 - 10 of 11 pro vyhledávání: '"H W Mook"'
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Effect of Polysilicon Grain Size on Gate Leakage in CMOS Manufacturing
Autor: H. W. Mook, H. R. Wang, B. N. Bong, Y. Qi, Q. Y. Kong, H. P. Kuan, C. Taher, W. H. Tham
Publikováno v: 2019 Electron Devices Technology and Manufacturing Conference (EDTM).
The effect of polysilicon grain size on gate leakage is investigated and the impact on yield is presented. Wafers with larger polysilicon grains show higher yield loss associated with gate leakage. One possible mechanism is that polysilicon with larg
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0d36688da738b2b880f373f6ff54c179
https://doi.org/10.1109/edtm.2019.8731028
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4
Scanning exposures with a MAPPER multibeam system
Autor: M. Hoving, E. A. Hakkennes, I. L. van Mil, H. W. Mook, Marco Jan-Jaco Wieland, V. Kuiper, G. de Boer, C. van den Berg, N. Venema, Thomas Adriaan Ooms, M. Sanderse, J. J. Koning, Remco Jager, Erwin Slot, A. Tudorie, A. Weirsma, A. M. C. Valkering, S. Boschker, T. van de Peut, Bert Jan Kampherbeek, S. Woutersen, Niels Vergeer, S. Postma, P. Scheffers, G. Holgate, Yue Ma
Publikováno v: Alternative Lithographic Technologies III.
Currently, three MAPPER multi-electron beam lithography tools are operational. Two are located at customers, TSMC and LETI, and one is located at MAPPER. The tools at TSMC and LETI are used for process development. These tools each have 110 parallel
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::04ca69288110d977cdad095a84e5e3b4
https://doi.org/10.1117/12.881572
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5
State-selective electron capture in collisions of He2+ with aligned Na∗ (3p) atoms
Autor: R. Morgenstern, A. R. Schlatmann, H. W. Mook, R. Hoekstra
Publikováno v: AIP Conference Proceedings.
The first results of a study of single electron capture processes in the quasi one‐electron system He2++Na at collision energies of 3–10 keV/u are presented. We report on charge exchange from laser excited sodium atoms into the near‐resonant He
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3f6da00cab0b229d44754cea61cd37fa
https://doi.org/10.1063/1.43649
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6
Progress with the IBM Very High Resolution STEM
Autor: P. Kruit, H. W. Mook, Niklas Dellby, Ondrej L. Krivanek, Re. Batson
Publikováno v: Microscopy and Microanalysis. 7:234-235
The IBM high resolution STEM project has now reached the point where integration of new subsystems into the instrument is the main activity. During the past three years, we have demonstrated a 50meV EELS resolution using a high brightness electron mo
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::18e97034c1c4817f22445dc45582be4a
https://doi.org/10.1017/s1431927600027240
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7
Energy Filtering of Schottky Field Emission Gun Using Fringe Field Monochromator
Autor: A. H. V. van Veen, P. Kruit, H. W. Mook
Publikováno v: Microscopy and Microanalysis. 5:646-647
The energy resolution which can be attained in electron energy loss spectroscopy (EELS) is determined by the energy spread of the electron source. The energy width of a high brightness electron gun (typically 0.4 to 0.8 eV) blurs the energy spectrum.
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fd555ee4072ca24c82646b09df47104a
https://doi.org/10.1017/s143192760001655x
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