Zobrazeno 1 - 7
of 7
pro vyhledávání: '"H T Johnson-Steigelman"'
Autor:
R. Fung, S. S. Parihar, H. T. Johnson-Steigelman, Dilano K. Saldin, Paul F. Lyman, V. L. Shneerson
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 63:239-250
The discovery that the phase problem of diffraction from non-periodic objects may be solved by oversampling the diffraction intensities in reciprocal space with respect to a Nyquist criterion has opened up new vistas for structure determination by di
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 24:1218-1222
The formation of hafnium silicate films (HfSixOy) for use as gate oxides with a large dielectric constant by solid-state reaction of Hf metal and SiO2 was investigated. Thin, fully reacted silicate films could be formed, and were thermally stable in
Autor:
S. S. Parihar, Paul F. Lyman, E. D. Lu, V. L. Shneerson, Dilano K. Saldin, H. T. Johnson-Steigelman, R. Fung
Publikováno v:
Surface Science. 600:424-435
Adsorption of 0.5 monolayers (ML) of Sb on the Au(1 1 0) surface resulted in the formation of a c(2 x 2) surface reconstruction. Analysis of surface X-ray diffraction data by a direct method revealed the existence of an ordered substitutional surface
Publikováno v:
Acta crystallographica. Section A, Foundations of crystallography. 63(Pt 3)
The discovery that the phase problem of diffraction from non-periodic objects may be solved by oversampling the diffraction intensities in reciprocal space with respect to a Nyquist criterion has opened up new vistas for structure determination by di
Publikováno v:
Physical Review B. 69
The solid-state reaction of thick $(\ensuremath{\sim}50\phantom{\rule{0.3em}{0ex}}\text{nm})$ and thin $(\ensuremath{\sim}\text{monolayer})$ films of Hf with cleaned and oxidized $\text{Si}(001)$ substrates was investigated. Upon annealing to $1000\p
Autor:
M Z Tahar, H T Johnson-Steigelman
Publikováno v:
Journal of Physics: Conference Series. 400:022121
Elemental In and Pb films ranging in thickness from 200?2000 nm have been grown on glass (SiO2) and other substrates using vacuum vapor deposition. Film growth was monitored and controlled by in-situ four-point probe resistance measurements. Samples
Autor:
S. S. Parihar, Paul F. Lyman, V. L. Shneerson, H. T. Johnson-Steigelman, Dilano K. Saldin, Ross Harder, R. Fung
Publikováno v:
Acta Crystallographica Section A Foundations of Crystallography. 64:C109-C109