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Autor:
Manuel J. Pfeifenberger, Adam Kubec, David P. Gruber, Michael Tkadletz, Manfred Burghammer, Martin Rosenthal, H. Sternschulte, Jozef Keckes, Bernhard Sartory, Nicolas Wöhrl, Jakub Zalesak, Juraj Todt, Sven Niese
Thin diamond films deposited by chemical vapour deposition (CVD) usually feature cross-sectional gradients of microstructure, residual stress and mechanical properties, which decisively influence their functional properties. This work introduces a no
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c90c09ea5c0852d68e600e811b0fb6dd
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85060026093
https://www.scopus.com/inward/record.url?partnerID=HzOxMe3b&origin=inward&scp=85060026093
Autor:
Christoph Becher, Benjamin Pingault, Tina Müller, Matthias Schreck, H. Sternschulte, Christian Hepp, Elke Neu, Doris Steinmüller-Nethl, Stefan Gsell, Mete Atatüre
Publikováno v:
Nature Communications
Colour centres in diamond have emerged as versatile tools for solid-state quantum technologies ranging from quantum information to metrology, where the nitrogen-vacancy centre is the most studied to-date. Recently, this toolbox has expanded to includ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19f856378826ac80f34ef92b9902ba23
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/38778
https://opus.bibliothek.uni-augsburg.de/opus4/frontdoor/index/index/docId/38778
Autor:
Isabella Staudinger, Stephan V. Roth, H. Sternschulte, S. Ghodbane, Doris Steinmüller-Nethl, Jan Perlich, Alessandro Sepe, Christine M. Papadakis
Publikováno v:
Diamond and Related Materials. 37:68-73
In this work, an ultrananocrystalline diamond film was studied with grazing-incidence small-angle X-ray scattering (GISAXS) to determine the diamond grain size and average distance of the grains with a non-destructive method and with excellent sampli
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7f7eb9d64f1fe5b5f8ea67a8db28e8
https://doi.org/10.1016/j.diamond.2013.04.015
https://doi.org/10.1016/j.diamond.2013.04.015
Silicon-vacancy (SiV) centers in diamond are promising systems for quantum information applications due to their bright single photon emission and optically accessible spin states. Furthermore, SiV centers in low-strain diamond are insensitive to per
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d479bce5a3d4131ddb562bcfee73c807
Autor:
Thomas Lechleitner, Doris Steinmüller-Nethl, Robert Gassner, Erminald Bertel, Laurent Francis, H. Sternschulte, Michael Rasse, Frank Kloss, Frederik Klauser
Publikováno v:
Diamond and Related Materials. 17:1089-1099
Novel technologies for synthesis of nano-crystalline diamond (NCD) enable industrial production allowing large area deposition on a variety of substrate materials - at reasonable price. New perspectives for future innovative products emerge demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f3b58441f7b7fb08bb9c7f222db9179
https://doi.org/10.1016/j.diamond.2007.12.061
https://doi.org/10.1016/j.diamond.2007.12.061
Publikováno v:
Chemical Vapor Deposition. 14:232-235
The morphology of ultra nanocrystalline diamond (UNCD) films is modeled by a pure geometrical approach. Diamond spheres with a fixed radius are added randomly spread on a smooth substrate surface covered with diamond seeds in varied primary nucleatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::303fff16b3f7173097a9fc0a9e7334c4
https://doi.org/10.1002/cvde.200706665
https://doi.org/10.1002/cvde.200706665
Publikováno v:
Diamond and Related Materials. 15:542-547
Diamond growth by microwave plasma chemical vapour deposition (MWPCVD) at high temperature (∼1200 °C) and high process gas pressure (200 mbar) was studied and compared with growth at standard conditions (800 °C, 30 mbar). The growth rate was meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65c988ecb5a0d12d36191fec5b74d99a
https://doi.org/10.1016/j.diamond.2006.01.010
https://doi.org/10.1016/j.diamond.2006.01.010
Publikováno v:
Diamond and Related Materials. 14:266-271
High rate homoepitaxial diamond growth by microwave plasma chemical vapor deposition (MPCVD) was studied. At a gas pressure of 200 mbar and a methane concentration of 10% a maximum growth rate of 30 μm/h was obtained. High pyramidal hillocks with pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::04ee39a99367cd83bdea464908e52eeb
https://doi.org/10.1016/j.diamond.2004.10.043
https://doi.org/10.1016/j.diamond.2004.10.043
Publikováno v:
Diamond and Related Materials. 12:318-323
b ¨ Abstract The influence of H S on the CVD diamond growth, the sulfur incorporation and the electronic properties of sulfur containing 2 homoepitaxial diamond films were studied. Laser reflection interferometry (LRI) in combination with mass spect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7a80c0f02b3e315880f9a77cef9a0aa0
https://doi.org/10.1016/s0925-9635(02)00312-6
https://doi.org/10.1016/s0925-9635(02)00312-6