Zobrazeno 1 - 10
of 34
pro vyhledávání: '"H S Maciel"'
Publikováno v:
Materials Research Express, Vol 7, Iss 7, p 076408 (2020)
Titanium dioxide (TiO _2 ) and aluminum oxide (Al _2 O _3 ) thin films, with thicknesses around 100 nm, were grown on commercial pure- and resin-coated Al substrates using the atomic layer deposition (ALD). A comprehensive and comparative study of co
Externí odkaz:
https://doaj.org/article/897210a66b9047cb8a4ff1c595232b19
Publikováno v:
Journal of Integrated Circuits and Systems. 10:38-42
This paper discusses about the effect of substrate type on structure of titanium dioxide thin film deposited by atomic layer deposition technique using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon
Autor:
Sergio Cardoso, Fernanda Ramos Figueira, Anelise C.O.C. Doria, F.R. Marciano, Bruno V.M. Rodrigues, V.P. dos Santos, G. E. Testoni, H. S. Maciel, Rodrigo Sávio Pessoa, Anderson Oliveira Lobo, Mariana A. Fraga
Publikováno v:
Applied Surface Science. 422:73-84
Atomic layer deposition (ALD) surges as an attractive technology to deposit thin films on different substrates for many advanced biomedical applications. Herein titanium dioxide (TiO2) thin films were successful obtained on polyurethane (PU) and poly
Publikováno v:
Matéria (Rio de Janeiro). 19:274-290
Este artigo discute o emprego do carbeto de silício (SiC), na forma de substrato e filme fino, em sensores MEMS (Micro-Electro-Mechanical Systems) para aplicações em ambientes sujeitos a condições extremas, especialmente no setor aeroespacial. A
Autor:
O. V. Mucha, H. A. Viarshyna, P. T. Lacava, V. Y. Baranov, A. Matus, O. S. Nozhenko, Andrei V. Gorbunov, A. Pilatau, R. Maurao, I. Liapeshko, G. Petraconi Filho, H. S. Maciel
Publikováno v:
Journal of the Brazilian Society of Mechanical Sciences and Engineering. 36:673-679
This paper presents the analysis of ecological and economical availability for using syngas from gasification of biomass waste or other solid fuels into diesel with ICE-based combined cycle (CC). The new approach is proposed to improve the ecological
Autor:
Rodrigo Sávio Pessoa, H. S. Maciel, M R Gongora‐Rubio, R K Yamamoto, Marcos Massi, K. G. Grigorov
Publikováno v:
Surface Engineering. 27:80-85
Polyethylene surface modification studies were performed in a new microplasma source using O2 and N2 gases. The degree of modification of polyethylene surface was qualitatively investigated through water contact angle measurements using distilled wat
Autor:
A. S. da Silva Sobrinho, Marcos Massi, K. G. Grigorov, H. S. Maciel, S. A. C. Mello, Jorge Carlos Narciso Dutra, M. S. Oliveira
Publikováno v:
Surface Engineering. 26:519-524
In the present work, a microwave excited plasma (2·45 GHz, 1 kW) was used to modify the surface characteristics of the ethylene propylene diene monomer rubber. The samples were treated with a mixture of nitrogen, hydrogen and argon plasmas. The oper
Autor:
Jorge Carlos Narciso Dutra, J. H. Moraes, A. S. da Silva Sobrinho, Marcos Massi, S. A. C. Mello, H. S. Maciel, W H Schreiner
Publikováno v:
Journal of Physics D: Applied Physics. 40:7747-7752
The surface of ethylene-propylene-diene monomer (EPDM) rubber was treated in N2/Ar and N2/H2/Ar RF plasmas in order to achieve similar or better adhesion properties than NBR (acrylonitrile-butadiene) rubber, nowadays used as thermal protection of roc
Autor:
Rodrigo Sávio Pessoa, H. S. Maciel, Marcos Massi, T. B. Liberato, H. Toku, A. S. da Silva Sobrinho
Publikováno v:
ECS Transactions. 9:189-197
This article reports on the effect of the increase of substrate temperature due to the plasma discharge on the crystalline structure of the TiO2 thin films deposited on silicon by the magnetron sputtering technique. The influence on the film crystall
Etching Studies of Post-Annealed SiC Films Deposited by PECVD: Influence of the Oxygen Concentration
Publikováno v:
ECS Transactions. 9:227-234
Amorphous silicon carbide thin films (SiC) were produced by PECVD technique at room temperature. Post-annealing was used to crystallize the SiC films. These films were etched in reactive ion etching system using SF6 + O2 gas mixtures. The influence o