Zobrazeno 1 - 10
of 39
pro vyhledávání: '"H R Vydyanath"'
Autor:
Xue Ren Zhang, D. Walker, Adam William Saxler, M. Ahoujja, Manijeh Razeghi, William C. Mitchel, H. R. Vydyanath, Patrick Kung, J.S. Solomon
Publikováno v:
Materials Science Forum. :1161-1166
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c58e2ab68e1e7b14f27387ba1d401ce4
https://doi.org/10.4028/www.scientific.net/msf.258-263.1161
https://doi.org/10.4028/www.scientific.net/msf.258-263.1161
Autor:
H. R. Vydyanath, Sivalingam Sivananthan, F. Aqariden, Jose M. Arias, P. S. Wijewarnasuriya, Majid Zandian, D. D. Edwall
Publikováno v:
Journal of Electronic Materials. 26:621-624
The results of arsenic incorporation in HgCdTe layers grown by molecular beam epitaxy (MBE) are reported. Obtained results indicate that arsenic was successfully incorporated as acceptors in MBE-HgCdTe layers after a low temperature anneal. Secondary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1fc4f9ed6a8b69f404ddd3e5df962360
https://doi.org/10.1007/s11664-997-0205-6
https://doi.org/10.1007/s11664-997-0205-6
Status of Te-rich and Hg-rich liquid phase epitaxial technologies for the growth of (Hg,Cd)Te alloys
Autor:
H. R. Vydyanath
Publikováno v:
Journal of Electronic Materials. 24:1275-1285
In this review, we summarize the progress to-date in the technology of Hg1−xCdxTe liquid phase epitaxial growth from Hg-rich and Te-rich solutions. Areas of research which need to be pursued to further improve the state of the art in device perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c2227990979049e05c8eed710265db6
https://doi.org/10.1007/bf02653085
https://doi.org/10.1007/bf02653085
Electrical characterization of Hg1−xCdxTe (0.126≤x≤0.58) grown by organometallic vapor phase epitaxy
Publikováno v:
Journal of Applied Physics. 76:385-389
Epilayers of Hg1−xCdxTe (mercury cadmium telluride: MCT) were grown at 300 °C, under atmospheric pressure, in a cold wall annular reactant inlet inverted‐vertical reactor chamber. As‐grown MCT surfaces (0.126≤x≤0.58) were specular and free
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2aa56b7181786524cddcc2a5caed76f0
https://doi.org/10.1063/1.357085
https://doi.org/10.1063/1.357085
Autor:
J. J. Kennedy, James B. Parkinson, H. R. Vydyanath, G. T. Neugebauer, Brian E. Dean, J. Ellsworth, C. J. Johnson, J. L. Sepich, P. K. Liao
Publikováno v:
Journal of Electronic Materials. 22:1073-1080
(Cd,Zn)Te wafers containing Te precipitates have been annealed under well defined thermodynamic conditions at temperatures below and above the melting of Te. Results of the examination of the wafers with infrared microscopy before and after the annea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67eaab1e9b411ce7c95ef29278c87a1e
https://doi.org/10.1007/bf02817527
https://doi.org/10.1007/bf02817527
Publikováno v:
Journal of Electronic Materials. 22:1067-1071
Cd1−xZnxTe compounds of different compositions have been prepared at temperatures ranging from 400 to 1000°C by annealing elemental Te in sealed quartz ampoules, in an atmosphere comprising vapors of Cd and Zn whose partial pressures were varied b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::641619c94e00010d51c299cd7086b38a
https://doi.org/10.1007/bf02817526
https://doi.org/10.1007/bf02817526
Autor:
H R Vydyanath
Publikováno v:
Semiconductor Science and Technology. 5:S213-S216
The electrical behaviour of phosphorus in bulk Hg0.8Cd0.2Te crystals is compared with that in Hg0.7Cd0.3Te epitaxial films grown from Te-rich solutions. The mass action constants associated with the process of site transfer of phosphorus atoms from H
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5720f0516b60e943b7da6d9129f180d1
https://doi.org/10.1088/0268-1242/5/3s/047
https://doi.org/10.1088/0268-1242/5/3s/047
Autor:
G. Chambers, F. Aqariden, Latika Becker, H. R. Vydyanath, S. Sivananthan, P. S. Wijewarnasuriya
Publikováno v:
Journal of Electronic Materials. 27:504-506
Compositional changes induced in growing Hg1−xCdxTe layers as a function of the changes in temperature of the indium source in the MBE chamber have been analyzed in terms of the Hg-In alloy thermodynamics and changes in the activity of indium over
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d00ab46875219a444bdf6c4d4ab76d1
https://doi.org/10.1007/s11664-998-0005-7
https://doi.org/10.1007/s11664-998-0005-7
Autor:
J.S. Solomon, Patrick Kung, H. R. Vydyanath, Adam William Saxler, X. Zhang, Manijeh Razeghi, D. Walker, William C. Mitchel
Publikováno v:
Applied Physics Letters. 71:3272-3274
GaN films grown by low-pressure metalorganic chemical vapor deposition using trimethylgallium and triethylgallium as gallium precursors are compared. The films were characterized by x-ray diffraction, Hall effect, photoluminescence, secondary ion mas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb467a6e01382d95586ea7556b89ebb8
https://doi.org/10.1063/1.120310
https://doi.org/10.1063/1.120310
Autor:
J. L. Sepich, P. K. Liao, C. J. Johnson, J. J. Kennedy, J. Ellsworth, H. R. Vydyanath, G. T. Neugebauer, Brian E. Dean
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1476
Using a quasichemical approach, the total native defect concentration and the minimum deviation in stoichiometry have been calculated in CdTe crystals as a function of the Cd pressure at various temperatures. With this knowledge, CdTe and (Cd,Zn)Te w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0607b225fe608b5bb52761b3219f6560
https://doi.org/10.1116/1.586275
https://doi.org/10.1116/1.586275