Zobrazeno 1 - 10
of 192
pro vyhledávání: '"H Pfleiderer"'
Autor:
H Pfleiderer, B Bullemer
Publikováno v:
Solar Energy Materials and Solar Cells. 53:131-152
The field in the i-layer of an amorphous-silicon solar cell may be assumed as uniform. We formulate the respective cell model without further approximations in terms of a “regional method”. The i-layer is subdivided for that purpose in many regio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24e44f3932a72ecddced727dee8c001b
https://doi.org/10.1016/s0927-0248(98)00019-1
https://doi.org/10.1016/s0927-0248(98)00019-1
Publikováno v:
Solid State Phenomena. :823-852
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18dcc89e3f6ebd80442f455665f9d4e9
https://doi.org/10.4028/www.scientific.net/ssp.44-46.823
https://doi.org/10.4028/www.scientific.net/ssp.44-46.823
Autor:
H. Pfleiderer
Publikováno v:
Solid-State Electronics. 38:1089-1095
Semiconductor devices are to be explained by the semiconductor equations and boundary conditions. A device simulation requires the solution of the respective boundary-value problem. Numerical methods have to be applied in general. Solutions over a di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb99fea583ad3a7848a77dd3c3cad29
https://doi.org/10.1016/0038-1101(95)98679-w
https://doi.org/10.1016/0038-1101(95)98679-w
Autor:
W. Kusian, H. Pfleiderer
Publikováno v:
Journal of Non-Crystalline Solids. :713-716
The assumption of a uniform field through the i-layer absorber of an a-Si:H pin solar cell seems to be hardly realistic. The analytical models based on this assumption have been nevertheless rather successful. A few calculations will demonstrate this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5b6717b3533c3a43409faf862279d6ed
https://doi.org/10.1016/0022-3093(93)91097-m
https://doi.org/10.1016/0022-3093(93)91097-m
Publikováno v:
Journal of Non-Crystalline Solids. :813-816
We measured the spectral photoconductance of slightly boron doped amorphous germanium (a-Ge:H) films through the wavelength interval from 450 to 950 nm, and determined the products ( μτ ) n of electrons and ( μτ ) p of holes by means of an own tw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02f55a4925cb095f7c66246738dd9181
https://doi.org/10.1016/s0022-3093(05)80244-3
https://doi.org/10.1016/s0022-3093(05)80244-3
Autor:
H. Pfleiderer
Publikováno v:
Journal of Non-Crystalline Solids. :1205-1208
The reversal of the electric field in the i-layer of a pin cell under forward voltage stimulates surface recombination. Reversed fields and surface recombination together yield secondary photocurrents and limit the AM1 open-circuit voltage.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64f84562cfe57d52765fb90f54896b9f
https://doi.org/10.1016/s0022-3093(05)80340-0
https://doi.org/10.1016/s0022-3093(05)80340-0
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The authors prepared a-Ge:H films with different thicknesses and measured their spectral photoconductivity, which was found to increase with both film thickness and light wavelength. As an explanation, reduced photoconductivity under the illuminated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5e26baf007d677c00ecc80cf57540b3
https://doi.org/10.1109/pvsc.1990.111874
https://doi.org/10.1109/pvsc.1990.111874
Autor:
H. Pfleiderer, W. Kusian
Publikováno v:
AIP Conference Proceedings.
The change of the spectral photocurrent characteristics of amorphous silicon pin solar cells with light induced degradation is compared with the effect of slightly doping the ‘‘i‐layer’’. Both treatments yield similar results. Light stress
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::096239dfe38589bc62324521207e9a7f
https://doi.org/10.1063/1.41039
https://doi.org/10.1063/1.41039
Autor:
H. Pfleiderer
Publikováno v:
Tenth E.C. Photovoltaic Solar Energy Conference ISBN: 9780792313892
Numerical simulations of dark and AM1 characteristics are discussed. A field reversal supports the photocurrent reversal. The principal source of reversed (secondary) photocurrents is surface recombination, transmitting an electron current to a hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4229c841cd15fe6c50810d0134b2965
https://doi.org/10.1007/978-94-011-3622-8_54
https://doi.org/10.1007/978-94-011-3622-8_54
An operational amplifier with a settling time nearly independent of the signal amplitude and the capacitive load has been realised in CMOS technology. It uses an additional circuit to inject an extra bias current into the bias circuit of the operatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aa70f26522d9bf173f640bec39073669
https://publica.fraunhofer.de/handle/publica/178341
https://publica.fraunhofer.de/handle/publica/178341